Emissive LED display with high and low blue modes
A display comprising: (a) a plurality of pixels, each of said plurality of pixels comprising three sub pixels with each subpixel comprising an LED, wherein at least one LED of said three subpixels of each pixel comprises a dual wavelength LED; and (b) at least one driver for driving LEDs of said three subpixels, said at least one driver having three contacts for said at least one LED of each pixel.
1 . A display comprising:
a plurality of pixels, each of said plurality of pixels comprising three sub pixels with each subpixel comprising an LED, wherein at least one LED of said three subpixels of each pixel comprises a dual wavelength LED, said dual wavelength LED being a blue LED configured to selectively emit the two different wavelengths, a first wavelength having a first peak wavelength above 440 nm, and a second wavelength having a second peak wavelength below 440 nm; and
at least one driver for driving LEDs of said three subpixels, said at least one driver having three contacts for said at least one LED of each pixel.
2 . The display of claim 1 , wherein said at least one LED is a flip chip LED.
3 . The display of claim 2 , wherein said at least one LED is a cascading multi-junction LED or side-by-side multi-junction LED.
4 . The display of claim 3 , wherein each junction of said cascading multi-junction LED and side-by-side multi-junction LED is independently controllable.
5 . The display of claim 3 , wherein said cascading multi-junction LED and side-by-side multi-junction LED are dual junction LEDs.
6 . The display of claim 5 , wherein said dual junctions of said at least one LEDs are driven separately.
7 . The display of claim 3 , wherein said at least one LED is a cascading multi-junction LED.
8 . The display of claim 7 , wherein said at least one LED comprises multiple stacked LED heterostructure separated by at least one tunnel junction to allow current to keep flowing through the vertical stack.
9 . The display of claim 8 , wherein said tunnel junction comprises an InGaN layer to further improve tunneling.
10 . The display of claim 7 , wherein said at least one LED is terminated with a second tunnel junction to create a top side n-contact instead of a p-contact.
11 . The display of claim 7 , wherein said at least one LED comprises a distributed Bragg reflector (DBR) or metal mirror contact added to reflect more light upward out of a substrate.
12 . The display of claim 3 , wherein said at least one LED is a side-by-side multi-junction LED.
13 . The display of claim 12 , wherein said at least one LED comprises at least one tunnel junction.
14 . The display of claim 1 , wherein said first peak wavelength no less than 460 nm, and said second peak wavelength is no greater than 420 nm.