IP Library Granted Patent US 12696608
Granted Patent B2
US 12696608 · App. 18/166,483 · Granted Jul 28, 2026

Electronic device having photo diode and light emitting module

Inventors: Chiu-Lien Yang (Miaoli County, TW); Jia-Yuan Chen (Miaoli County, TW); Chandra Lius (Miaoli County, TW); Tsung-Han Tsai (Miaoli County, TW); Kuan-Feng Lee (Miaoli County, TW)
Assignee: Innolux Corporation
H10H29/45G02B3/0006H10F39/182H10F39/8057H10H29/142H10H29/32H10H29/39H10D62/133
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12696608
App. No.
18/166,483
Granted
Jul 28, 2026
Kind
B2
Abstract

An electronic device and a method of manufacturing the electronic device are provided. The electronic device includes a semiconductor substrate and a light emitting module. The semiconductor substrate includes multiple transistors and multiple photo diodes. The light emitting module is disposed on the semiconductor substrate and includes multiple light emitting elements. The light emitting elements are respectively electrically connected to the transistors, and the light emitting elements do not overlap with the photo diodes.

Claims (6)

1 . An electronic device, comprising:

a semiconductor substrate, comprising a plurality of transistors and a plurality of photo diodes; and

a light emitting module, disposed on the semiconductor substrate and comprising a plurality of light emitting elements, wherein the light emitting elements are respectively electrically connected to the transistors, and the light emitting elements do not overlap with the photo diodes, wherein the light emitting elements comprise a plurality of first type semiconductors, the first type semiconductors are integrated into a first type semiconductor layer, the first type semiconductor layer comprises a plurality of first openings, and the first openings respectively overlap with the photo diodes,

wherein the first type semiconductor layer partially overlaps with the photo diodes.

2 . The electronic device according to claim 1 , wherein the light emitting module further comprises a light shielding layer, the light shielding layer surrounds each of the light emitting elements, the light shielding layer comprises a plurality of second openings, and the second openings respectively overlap with the photo diodes.

3 . The electronic device according to claim 1 , wherein the light emitting module further comprises a plurality of lenses, and the lenses respectively overlap with the photo diodes.