Manufacturing method for patterned quantum dot film layer comprising replacing native ligands of quantum dot thin film by replacement ligands

1 . A manufacturing method for a patterned quantum dot film layer, comprising:

forming a patterned mask layer on one side of a base substrate, wherein the patterned mask layer exposes a target region in which quantum dot bodies are to be formed;

forming a quantum dot thin film on a side, facing away from the base substrate, of the patterned mask layer, wherein the quantum dot thin film comprises the quantum dot bodies, and native ligands connected to the quantum dot bodies;

forming a ligand thin film containing replacement ligands on a side, facing away from the patterned mask layer, of the quantum dot thin film, and standing for a first duration, such that the native ligands are replaced by the replacement ligands;

performing cleaning by a cleaning solvent to remove unreacted replacement ligands and replaced native ligands, wherein the quantum dot bodies connected to the replacement ligands are not removed by the cleaning solvent; and

peeling off the patterned mask layer, and together removing the quantum dot thin film attached to the patterned mask layer, so as to form a pattern part of a quantum dot film layer in the target region;

wherein the forming the ligand thin film containing the replacement ligands on the side, facing away from the patterned mask layer, of the quantum dot thin film, and standing for the first duration, such that the native ligands are replaced by the replacement ligands, comprises:

forming the ligand thin film containing replacement ligands comprising a plurality of coordinating terminals on the side, facing away from the patterned mask layer, of the quantum dot thin film, wherein each of the replacement ligands comprising the plurality of coordinating terminals comprises a linking group, and a plurality of terminal coordinating groups connected to the linking group; and

replacing the native ligands by the replacement ligands comprising the plurality of coordinating terminals, and connecting different terminal coordinating groups of the replacement ligand comprising the plurality of coordinating terminals to different quantum dot bodies, so that the different quantum dot bodies are crosslinked with each other through the replacement ligand comprising the plurality of coordinating terminals.

2 . The manufacturing method according to claim 1 , wherein the forming the ligand thin film containing the replacement ligands comprising the plurality of coordinating terminals on the side, facing away from the patterned mask layer, of the quantum dot thin film, comprises:

forming, on the side, facing away from the patterned mask layer, of the quantum dot thin film, the ligand thin film with the terminal coordinating groups containing one of:

amino;

polyamino;

hydroxy;

polyhydroxy;

mercapto;

polythiol;

thioether;

polythioether;

phosphine; and

phosphine oxide.

3 . The manufacturing method according to claim 2 , wherein the forming the ligand thin film containing the replacement ligands comprising the plurality of coordinating terminals on the side, facing away from the patterned mask layer, of the quantum dot thin film comprises:

forming, on the side, facing away from the patterned mask layer, of the quantum dot thin film, the ligand thin film with the linking groups containing one of:

ethyl;

n-butyl;

tert-butyl;

n-octyl;

tert-butylphenyl;

methoxy; and

n-butoxy.

4 . The manufacturing method according to claim 1 , wherein the forming the ligand thin film containing the replacement ligands comprising the plurality of coordinating terminals on the side, facing away from the patterned mask layer, of the quantum dot thin film comprises:

forming the ligand thin film containing 1,12-dodecyldithiol on the side, facing away from the patterned mask layer, of the quantum dot thin film.

5 . The manufacturing method according to claim 1 , wherein the forming the ligand thin film containing the replacement ligands on the side, facing away from the patterned mask layer, of the quantum dot thin film, and standing for the first duration, such that the native ligands are replaced by the replacement ligands, comprises:

forming the ligand thin film containing insoluble ligands on the side, facing away from the patterned mask layer, of the quantum dot thin film, wherein a chain length of each insoluble ligand is less than a chain length of each native ligand; and

replacing the native ligands by the insoluble ligands, so that the quantum dot bodies are adsorbed onto the base substrate.

6 . The manufacturing method according to claim 5 , wherein the forming the ligand thin film containing the insoluble ligands on the side, facing away from the patterned mask layer, of the quantum dot thin film, comprises:

forming the ligand thin film containing an inorganic salt or containing an organic salt on the side, facing away from the patterned mask layer, of the quantum dot thin film.

7 . The manufacturing method according to claim 6 , wherein the forming the ligand thin film containing the insoluble ligands on the side, facing away from the patterned mask layer, of the quantum dot thin film, comprises:

forming, on the side, facing away from the patterned mask layer, of the quantum dot thin film, the ligand thin film containing one of:

iodide ions, chloride ions, bromide ions, —S 2 −, —HS−, —Se 2 −, —HSe, —Te 2 −, —HTe − , —TeS 3 2 −, —OH − , —NH 2− , —Sn 2 S 6 4− , —N 2 H 5 + , —CdCl 3 − , —Te 2− , —PO 4 3− , and —MoO 4 2− .

8 . The manufacturing method according to claim 1 , wherein the forming the ligand thin film containing the replacement ligands on the side, facing away from the patterned mask layer, of the quantum dot thin film, and standing for the first duration, such that the native ligands are replaced by the replacement ligands, comprises:

forming the ligand thin film containing the replacement ligands on the side, facing away from the patterned mask layer, of the quantum dot thin film, and standing for the first duration under the condition of no ultraviolet light source irradiation, such that the native ligands are replaced by the replacement ligands.

9 . The manufacturing method according to claim 1 , wherein the forming the quantum dot thin film on the side, facing away from the base substrate, of the patterned mask layer comprises:

forming the quantum dot thin film containing the quantum dot bodies, and oleic acid ligands connected to the quantum dot bodies on the side, facing away from the base substrate, of the patterned mask layer.