Light-emitting device with electron transporting particle and electronic apparatus including the same
A light-emitting device and an electronic apparatus including the light-emitting device. The light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode, wherein the interlayer may include an emission layer and an electron transport layer, the electron transport layer may be between the emission layer and the second electrode, the electron transport layer may include an electron transporting particle, the electron transporting particle may include a core, a first shell covering the core, and a second shell covering the first shell, the first shell may include a first compound, the second shell may include a second compound, the core may include a third compound, and the first compound and the second compound may each independently include an oxide, a chalcogenide, or any combination thereof.
1 . A light-emitting device comprising:
a first electrode;
a second electrode facing the first electrode; and
an interlayer between the first electrode and the second electrode,
wherein the interlayer comprises an emission layer and an electron transport layer,
the electron transport layer is between the emission layer and the second electrode,
the electron transport layer comprises an electron transporting particle,
the electron transporting particle comprises a core, a first shell covering the core, and a second shell covering the first shell,
the first shell comprises a first compound,
the second shell comprises a second compound,
the core comprises a third compound,
the first compound and the second compound each independently comprises an oxide, a chalcogenide, or any combination thereof,
the first compound and the second compound are different from each other,
the first compound and the third compound are different from each other,
the emission layer comprises a host, a dopant, a delayed fluorescence material, a quantum dot, or any combination thereof,
the quantum dot is configured to emit light, and
the electron transporting particle is configured differently from the quantum dot to transport electron to the emission layer.
2 . The light-emitting device of claim 1 , wherein
the first compound comprises an oxide of A 1 , a chalcogenide of A 1 , or any combination thereof, and
A 1 is a Group II element, a Group Ill element, or a combination thereof.
3 . The light-emitting device of claim 2 , wherein
A 1 is zinc (Zn), magnesium (Mg), boron (B), aluminum (Al), gallium (Ga), indium (In), mercury (Hg), cadmium (Cd), thallium (Tl), or any combination thereof.
4 . The light-emitting device of claim 1 , wherein
the first compound comprises ZnO, ZnSe, ZnSeO, ZnSeS, ZnS, Ga 2 O 3 , Ga 2 S 3 , Ga 2 Se 3 , Zn x Ga 1-x O, Zn x Ga 1-x S, Zn x Ga 1-x Se, or any combination thereof, and x is a real number satisfying a condition of 0<x<1.
5 . The light-emitting device of claim 1 , wherein
the second compound comprises an oxide of A 2 , a chalcogenide of A 2 , or any combination thereof, and
A 2 is a Group II element, a Group III element, or a combination thereof.
6 . The light-emitting device of claim 5 , wherein
A 2 is zinc (Zn), magnesium (Mg), boron (B), aluminum (Al), gallium (Ga), indium (In), mercury (Hg), cadmium (Cd), thallium (Tl), or any combination thereof.
7 . The light-emitting device of claim 1 , wherein
the second compound comprises ZnO, ZnSe, ZnSeO, ZnSeS, ZnS, Ga 2 O 3 , Ga 2 S 3 , Ga 2 Se 3 , Zn y Ga 1-y O, Zn y Ga 1-y S, Zn y Ga 1-y Se, or any combination thereof, and y is a real number satisfying a condition of 0<y<1.
8 . The light-emitting device of claim 1 , wherein
the third compound comprises an oxide, a chalcogenide, or any combination thereof.
9 . The light-emitting device of claim 1 , wherein
the third compound comprises an oxide of A 3 , a chalcogenide of A 3 , or any combination thereof, and
A 3 is beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), iron (Fe), zinc (Zn), aluminum (Al), gallium (Ga), indium (In), silicon (Si), germanium (Ge), tin (Sn), copper (Cu), or any combination thereof.
10 . The light-emitting device of claim 1 , wherein
the third compound comprises WO 3 , TiO 2 , MoO 3 , ZnO, ZnMgO, ZnAlO, ZrO, Fe 2 O 3 , V 2 O 5 , Al 2 O 3 , MgO, SnO, SnO 2 , Ta 2 O 3 , HfO 3 , ZrSiO 4 , BaTiO 3 , BaZrO 3 , WS 3 , TiS 2 , MoS 3 , ZnS, ZnMgS, ZnAlS, ZrS, Fe 2 S 3 , V 2 S 5 , Al 2 S 3 , WSe 3 , TiSe 2 , MoSe 3 , ZnSe, ZnMgSe, ZnAlSe, ZrSe, Fe 2 Se 3 , V 2 Se 5 , Al 2 Se 3 , or any combination thereof.
11 . The light-emitting device of claim 1 , wherein
the third compound comprises:
ZnO, ZnS or ZnSe; or
ZnO, ZnS, or ZnSe, each further comprising Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Cu, Al, Ga, In, Si, or any combination thereof.
12 . The light-emitting device of claim 1 , wherein an average particle diameter of the electron transporting particle is from about 3 nm to about 15 nm.
13 . The light-emitting device of claim 1 , wherein
the emission layer comprises a quantum dot.
14 . The light-emitting device of claim 13 , wherein
the quantum dot comprises a fourth compound, and
the fourth compound comprises an oxide, a chalcogenide, or any combination thereof.
15 . The light-emitting device of claim 14 , wherein
the fourth compound comprises an oxide of A 4 , a chalcogenide of A 4 , or any combination thereof, and
A 4 is a Group II element, a Group Ill element, or a combination thereof.
16 . The light-emitting device of claim 14 , wherein
the quantum dot has a core-shell structure comprising a core and a shell, and
the shell of the core-shell structure comprises the fourth compound.
17 . The light-emitting device of claim 1 , wherein
the electron transport layer is in direct contact with the emission layer.
18 . The light-emitting device of claim 1 , wherein
the electron transport layer is in direct contact with the second electrode.
19 . An electronic apparatus comprising the light-emitting device of claim 1 .
20 . The electronic apparatus of claim 19 , further comprising
a thin-film transistor, wherein
the thin-film transistor comprises a source electrode and a drain electrode, and
the first electrode of the light-emitting device is electrically connected to the source electrode or the drain electrode of the thin-film transistor.