Organic light-emitting display device and thin-film transistor array substrate

1 . An organic light-emitting display device comprising:

a substrate comprising a display area and a non-display area; and

at least one thin-film transistor comprising a semiconductor pattern including a source region and a drain region, a gate electrode on the semiconductor pattern and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region, wherein the source electrode and the drain electrode are positioned on the semiconductor pattern, and

wherein each of the source region and the drain region comprises conductive regions and non-conductive regions that are alternately disposed on the substrate, and the gate electrode is positioned on a layer that covers the source electrode and the drain electrode, or

the gate electrode is positioned on a layer, the layer is positioned directly below the source electrode and the drain electrode and is in direct physical contact with the source electrode and the drain electrode, and the layer has a through hole which the source electrode and the drain electrode are connected to each of the source region and the drain region, and

wherein the conductive regions comprise a first conductive region contacting the source electrode or the drain electrode, and a second conductive region positioned between the gate electrode and the source electrode or between the gate electrode and the drain electrode, and

at least one portion of the non-conductive regions is positioned at an outside edge of the first conductive region in the semiconductor pattern.

2 . The organic light-emitting display device according to claim 1 , wherein the semiconductor pattern is an oxide semiconductor pattern.

3 . The organic light-emitting display device according to claim 1 , wherein the first conductive region is conductive due to contact with ions, and the second conductive region is conductive due to ions injected into the second conductive region.

4 . The organic light-emitting display device according to claim 1 , wherein the at least one thin-film transistor comprises a driving thin-film transistor and at least one switching thin-film transistor, and the driving thin-film transistor comprises a first light-blocking pattern that is below the semiconductor pattern and connected to the source electrode.

5 . The organic light-emitting display device according to claim 4 , wherein the driving thin-film transistor comprises:

a first semiconductor pattern;

a first gate electrode overlapping the first semiconductor pattern; and

a first source electrode and a first drain electrode connected to the first semiconductor pattern,

wherein the at least one switching thin-film transistor comprises:

a second semiconductor pattern;

a second gate electrode overlapping the second semiconductor pattern; and

a second source electrode and a second drain electrode connected to the second semiconductor pattern, and

wherein the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode are on a same layer.

6 . The organic light-emitting display device according to claim 5 , wherein the first gate electrode and the second gate electrode are on a same layer that is located above the first source electrode.

7 . The organic light-emitting display device according to claim 5 , wherein the first gate electrode and the second gate electrode are on a same layer as the first source electrode.

8 . The organic light-emitting display device according to claim 5 , wherein the first gate electrode and the second gate electrode are on different layers from each other, and a vertical distance between the first gate electrode and the first semiconductor pattern is greater than a vertical distance between the second gate electrode and the second semiconductor pattern.

9 . The organic light-emitting display device according to claim 8 , wherein the at least one switching thin-film transistor further comprises a second light-blocking pattern, and a vertical distance between the second semiconductor pattern and the second light-blocking pattern is greater than a vertical distance between the first semiconductor pattern and the first light-blocking pattern.

10 . The organic light-emitting display device according to claim 4 , wherein the driving thin-film transistor is in the display area, and the at least one switching thin-film transistor is in at least one of the display area and the non-display area.

11 . The organic light-emitting display device according to claim 9 , wherein the second light-blocking pattern is electrically connected to the second gate electrode.

12 . A thin-film transistor array substrate comprising:

at least one thin-film transistor comprising a semiconductor pattern including a source region, a drain region, and a channel region that is between the source region and the drain region, a gate electrode on the semiconductor pattern and a source electrode electrically connected to the source region and a drain electrode electrically connected to the drain region, wherein the source electrode and the drain electrode are positioned on the semiconductor pattern, and

wherein each of the source region and the drain region comprises at least two conductive regions and a non-conductive region disposed between the at least two conductive regions, and

the gate electrode is positioned on a layer that covers the source electrode and the drain electrode, or

the gate electrode is positioned on a layer, the layer is positioned directly below the source electrode and the drain electrode and is in direct physical contact with the source electrode and the drain electrode, and the layer has a through hole which the source electrode and the drain electrode are connected to each of the source region and the drain region, and

wherein the at least two conductive regions comprise a first conductive region contacting the source electrode or the drain electrode, and a second conductive region positioned between the gate electrode and the source electrode or between the gate electrode and the drain electrode, and

at least one portion of the non-conductive region is positioned at an outside edge of the first conductive region in the semiconductor pattern.

13 . The thin-film transistor array substrate according to claim 12 , wherein the at least two conductive regions and the non-conductive region are alternately disposed in each of the source region and the drain region.

14 . The thin-film transistor array substrate according to claim 12 , wherein the first conductive region is spaced apart from the channel region, and wherein the second conductive region is adjacent to the channel region.

15 . The thin-film transistor array substrate according to claim 14 , wherein the first conductive region is conductive due to contact with ions, and the second conductive region is conductive due to ions injected into the second conductive region.

16 . The thin-film transistor array substrate according to claim 12 , further comprising:

a light-blocking pattern below the semiconductor pattern and connected to the source electrode.

17 . The thin-film transistor array substrate according to claim 12 , wherein the semiconductor pattern is an oxide semiconductor pattern.

18 . The thin-film transistor array substrate according to claim 12 , wherein the at least one thin-film transistor is at least one of a driving thin-film transistor and a switching thin-film transistor.

19 . An organic light-emitting display device comprising the thin-film transistor array substrate according to claim 12 .