Display device and manufacturing method thereof
A display device includes a plurality of transistors disposed on a substrate, an insulating layer disposed on the transistors, a first electrode disposed on the insulating layer and electrically connected to the transistors, a partition wall disposed on the insulating layer, a common layer disposed on the partition wall and the first electrode, an emission layer disposed on the common layer, a second electrode disposed on the emission layer, and an auxiliary layer disposed on the second electrode. The partition wall includes a groove, and an inner width of the groove is greater than an inlet width of the groove.
1 . A display device comprising:
a plurality of transistors disposed on a substrate;
an insulating layer disposed on the plurality of transistors;
a first electrode disposed on the insulating layer and electrically connected to the plurality of transistors;
a partition wall disposed on the insulating layer;
a common layer disposed on the partition wall and the first electrode;
an emission layer disposed on the common layer;
a second electrode disposed on the emission layer;
an auxiliary layer disposed on the second electrode; wherein
the partition wall includes a groove, and
an inner width of the groove is greater than an inlet width of the groove.
2 . The display device of claim 1 , wherein a thickness of the auxiliary layer is in a range of about 30 Å to about 200 Å.
3 . The display device of claim 1 , wherein a thickness of the auxiliary layer is uniform.
4 . The display device of claim 1 , wherein the auxiliary layer includes titanium nitride (TiN).
5 . The display device of claim 1 , wherein
the auxiliary layer includes a metal, and
a thickness of the auxiliary layer is equal to or less than about 50 Å.
6 . The display device of claim 5 , wherein the auxiliary layer includes at least one of W, Mo, Ta, Ti, and Al.
7 . The display device of claim 1 , wherein the auxiliary layer includes at least one of an indium tin oxide (ITO), an indium zinc oxide (IZO), a zinc tin oxide (ZTO), a copper indium oxide (CIO), a copper zinc oxide (CZO), a gallium zinc oxide (GZO), an aluminum zinc oxide (AZO), a tin oxide (SnO 2 ), a zinc oxide (ZnO), and an indium gallium zinc oxide (IGZO).
8 . The display device of claim 1 , wherein a width of an inside of the groove is greater than or equal to about 1.5 times of a width of an inlet of the groove.
9 . The display device of claim 1 , wherein a width of an inlet of the groove is in a range of about 0.5 μm to about 3 μm.
10 . The display device of claim 1 , wherein the partition wall includes an inorganic material.
11 . The display device of claim 1 , wherein the common layer is disposed in the groove.
12 . The display device of claim 1 , wherein the common layer disposed on the first electrode is separated by the groove.
13 . The display device of claim 1 , wherein the common layer is a hole injection layer.
14 . The display device of claim 1 , wherein the emission layer blocks an inlet of the groove.
15 . The display device of claim 1 , wherein the emission layer is disposed in the groove.
16 . The display device of claim 1 , wherein a height of the groove is greater than a thickness of the common layer and less than a thickness of the emission layer.
17 . A manufacturing method of a display device, comprising:
preparing a substrate including a plurality of transistors and a first electrode connected to the plurality of transistors;
forming a metal pattern on the substrate;
forming a partition wall on the metal pattern;
patterning the partition wall to form an opening overlapping the metal pattern in a plan view;
forming a groove in the partition wall by etching the metal pattern;
forming a common layer on the partition wall and the first electrode;
forming an emission layer on the common layer;
forming a second electrode on the emission layer; and
forming an auxiliary layer on the second electrode,
wherein the forming of the auxiliary layer is performed by an atomic layer deposition method.
18 . The manufacturing method of claim 17 , wherein a thickness of the auxiliary layer is in a range of about 30 Å to about 200 Å.
19 . The manufacturing method of claim 17 , wherein the auxiliary layer includes at least one of TiN, W, Mo, Ta, Ti, Al, an indium tin oxide (ITO), an indium zinc oxide (IZO), a zinc tin oxide (ZTO), a copper indium oxide (CIO), a copper zinc oxide (CZO), a gallium zinc oxide (GZO), an aluminum zinc oxide (AZO), a tin oxide (SnO 2 ), a zinc oxide (ZnO), and an indium gallium zinc oxide (IGZO).
20 . The manufacturing method of claim 17 , wherein
the common layer is disposed in the groove.