Display apparatus and method of manufacturing the same

1 . A display apparatus comprising:

a thin film transistor comprising a semiconductor pattern comprising an oxide semiconductor and a gate electrode overlapping the semiconductor pattern;

a first interlayer insulating layer on the semiconductor pattern and the gate electrode;

a connection electrode on the first interlayer insulating layer and contacting the semiconductor pattern through a contact hole penetrating the first interlayer insulating layer; and

a second interlayer insulating layer on the connection electrode,

wherein a hydrogen concentration of the second interlayer insulating layer is greater than a hydrogen concentration of the first interlayer insulating layer,

wherein the connection electrode entirely covers the gate electrode in a plan view, and

an end portion of the gate electrode is spaced apart from the contact hole by a first distance.

2 . The display apparatus of claim 1 , wherein the first distance is equal to or greater than about 10 μm.

3 . The display apparatus of claim 1 , wherein the hydrogen concentration of the second interlayer insulating layer is equal to or greater than about 2.0×10 22 atoms/cm 3 , and

in an area where the gate electrode overlaps the semiconductor pattern, a hydrogen intensity in an interface of the semiconductor pattern is less than or equal to about 1.0×10 3 counts/sec.

4 . The display apparatus of claim 1 , wherein the first interlayer insulating layer comprises silicon oxynitride (SiON), and the second interlayer insulating layer comprises silicon nitride (SiN x ).

5 . A display apparatus comprising:

a thin film transistor comprising a semiconductor pattern comprising an oxide semiconductor and a gate electrode overlapping the semiconductor pattern;

a first interlayer insulating layer on the semiconductor pattern and the gate electrode;

a third interlayer insulating layer on the first interlayer insulating layer and having a higher density than the first interlayer insulating layer; and

a connection electrode contacting the semiconductor pattern through a contact hole penetrating the first interlayer insulating layer and the third interlayer insulating layer,

wherein the connection electrode entirely covers the gate electrode in a plan view.

6 . The display apparatus of claim 5 , wherein the third interlayer insulating layer comprises a silicon nitride (SiN x ) layer of which a hydrogen intensity is between about 5.0×10 21 counts/sec and about 1.5×10 22 counts/sec.

7 . The display apparatus of claim 5 , wherein the third interlayer insulating layer comprises a silicon nitride (SiN x ) layer of which hydrogen emissions are between about 1.0×10 15 molecules/cm 2 and about 5.0×10 16 molecules/cm 2 .

8 . The display apparatus of claim 5 , wherein the third interlayer insulating layer comprises a silicon oxide (SiO x ) layer of which a hydrogen intensity is between about 5.0×10 20 counts/sec and about 1.0×10 21 counts/sec.

9 . The display apparatus of claim 5 , wherein the third interlayer insulating layer comprises a silicon oxide (SiO x ) layer of which hydrogen emissions are between about 5.0×10 14 molecules/cm 2 and about 1.0×10 15 molecules/cm 2 .

10 . The display apparatus of claim 5 , wherein a thickness of the third interlayer insulating layer is between about 10 nm and about 40 nm.

11 . A method of manufacturing a display apparatus, the method comprising:

forming, on a substrate, a lower metal layer and a buffer layer covering the lower metal layer;

forming, on the buffer layer, a semiconductor pattern, a gate electrode, and a first interlayer insulating layer covering the gate electrode;

forming a connection electrode on the first interlayer insulating layer, contacting the semiconductor pattern through a contact hole penetrating the first interlayer insulating layer, and entirely covering the gate electrode on a plane; and

forming a second interlayer insulating layer covering the connection electrode,

wherein a hydrogen concentration of the second interlayer insulating layer is higher than a hydrogen concentration of the first interlayer insulating layer.

12 . The method of claim 11 , wherein, in the forming of the connection electrode, the contact hole is spaced apart from an end portion of the gate electrode by a first distance, and

the first distance is equal to or greater than about 10 μm.

13 . The method of claim 11 , wherein the first interlayer insulating layer comprises silicon oxynitride (SiON), and

the second interlayer insulating layer comprises silicon nitride (SiN x ).

14 . The method of claim 11 , further comprising forming a third interlayer insulating layer on the first interlayer insulating layer, the forming being performed between the forming of the first interlayer insulating layer and the forming of the connection electrode,

wherein a hydrogen intensity of the third interlayer insulating layer is less than or equal to about 1.5×10 22 counts/sec and/or hydrogen emissions thereof are less than or equal to about 1.0×10 16 molecules/cm 2 .

15 . The method of claim 14 , wherein, in the forming of the third interlayer insulating layer, the third interlayer insulating layer comprises a SiN x layer and is formed in a silane (SiH 4 ) gas and nitrogen (N 2 ) gas atmosphere.

16 . The method of claim 14 , wherein, in the forming of the third interlayer insulating layer, the third interlayer insulating layer comprises a SiO x layer and is formed at a deposition power in a range from about 4 KW to about 8 kW.

17 . The method of claim 14 , wherein a thickness of the third interlayer insulating layer is between about 10 nm and about 40 nm.

18 . The method of claim 14 , wherein a hydrogen concentration of the second interlayer insulating layer is equal to or greater than about 2.0×10 22 atoms/cm 3 , and

in an area where the gate electrode overlaps the semiconductor pattern, a hydrogen intensity in an interface of the semiconductor pattern is less than or equal to about 1.0×10 3 counts/sec.