Method of manufacturing a thin film of perovskite compound and method of manufacturing a solar cell using the same
The present inventive concept relates to a method of manufacturing a thin film of a perovskite compound, including a process of reacting at least one compound selected from among an amine-based compound and an amidine-based compound, an organic metal compound including a divalent positive ion, and at least one hydrogen halide, and a method of manufacturing a solar cell using the same, and According to the present inventive concept, because a perovskite compound is manufactured by performing a reaction through a chemical vapor deposition (CVD) process and an atomic layer deposition (ALD) process, step coverage may be enhanced, and thus, it may be possible to form a thin film having a uniform thickness and a problem where a solvent remains may also be solved.
1 . A method of manufacturing a thin film of a perovskite compound, the method comprising:
reacting (i) at least one compound selected from among an amine-based compound and an amidine-based compound, (ii) an organic metal compound including a divalent positive ion, (iii) at least one hydrogen halide and (iv) at least one alkali metal-based compound through a chemical vapor deposition (CVD) process by supplying the at least one compound, the organic metal compound, the at least one hydrogen halide and the at least one alkali metal-based compound in a chamber,
wherein the at least one compound selected from among an amine-based compound and an amidine-based compound is selected from the group consisting of methylamine, ethylamine, phenethylamine, and formamidine,
wherein the organic metal compound including the divalent positive ion is selected from the group consisting of Pb(CH 3 ) 4 , Pb(C 2 H 5 ) 4 , Pb(SCN) 2 , (C 2 H 5 ) 3 PbOCH 2 C(CH 3 ) 3 , Pb(C 11 H 19 O 2 ) 2 , Pb((CH 3 ) 3 C—COCHCO—C(CH 3 ) 3 ) 2 , Pb((C 6 H 5 ) 2 PCH 2 P(C 6 H 5 ) 2 ) 2 , Pb(N(CH 3 ) 2 C(CH 3 ) 2 OH) 2 , C 12 H 28 N 2 O 2 Pb, and a compound represented by the following Chemical Scheme 1:
(In the Chemical Scheme 1, each of R 1 to R 12 is independently composed of hydrogen or an alkyl group, and the X is selected from a group consisting of Pb, Sn, Ge, Sb, Bi, and Ba),
wherein the perovskite compound comprises a compound of CABX 3 , where the Cis composed of the at least one alkali metal, the A is composed of a monovalent organic positive ion of the amine-based compound or a monovalent organic positive ion of the amidine-based compound, the B is composed of the divalent positive ion, and the X is composed of at least one halogen compound.
2 . The method of claim 1 , wherein
the CA is composed in a structure where a monovalent organic positive ion of the amine-based compound is added thereto at an x ratio, a monovalent organic positive ion of the amidine-based compound is added thereto at a y ratio, and a monovalent positive ion of the alkali metal is added thereto at a z ratio, each of x, y and z is more than 0, and x+y+z=1.
3 . The method of claim 1 , wherein the alkali metal-based compound is composed of a compound represented by the following Chemical Scheme 2:
(In the Chemical Scheme 2, each of R 1 to R 6 is independently composed of hydrogen or an alkyl group, and the Y is alkali metal).
4 . The method of claim 1 , wherein hexamethyldisilazane is obtained as a byproduct of the reaction.
5 . The method of claim 1 , wherein the method is performed at a temperature within a range of a room temperature to 200° C.