IP Library Granted Patent US 12696679
Granted Patent B2
US 12696679 · App. 18/039,311 · Granted Jul 28, 2026

Fullerene derivative and production method therefor

Inventors: Takeshi Igarashi (Kawasaki, JP); Chieko Nakagawa (Koriyama, JP)
Assignee: MITSUBISHI CORPORATION
H10K85/215C01B32/156C07C17/266C07C22/08C07C23/46C07D307/93C01P2006/40C07C2604/00H10K30/30
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Quick Facts
Patent No.
US 12696679
App. No.
18/039,311
Granted
Jul 28, 2026
Kind
B2
Abstract

A fullerene derivative having a partial structure shown in the following General Formula (1) is provided. (in Formula (1), C*'s are adjacent carbon atoms that form a fullerene framework. Rf 1 and Rf 2 each independently represents a perfluoroalkyl group having 1 to 4 carbon atoms, and Rf 1 and Rf 2 may be linked to each other to form a ring structure).

Claims (34)

1 . A fullerene derivative including

a fullerene framework, and

a partial structure represented by the following General Formula (1):

(in Formula (1), C*'s are adjacent carbon atoms that form the fullerene framework, Rf 1 and Rf 2 each independently represents a perfluoroalkyl group having 1 to 4 carbon atoms, and Rf 1 and Rf 2 may be linked to each other to form a ring structure),

wherein Rf 1 and Rf 2 are a trifluoromethyl group.

2 . The fullerene derivative according to claim 1 ,

wherein the fullerene framework is composed of C 60 , C 70 , C 74 , C 76 , or C 78 .

3 . The fullerene derivative according to claim 1 ,

wherein one fullerene framework includes one partial structure represented by Formula (1).

4 . A thin film comprising the fullerene derivative according to claim 1 .

5 . A photoelectric conversion element, comprising:

a first electrode and a second electrode that face each other; and

an organic layer disposed between the two electrodes,

wherein the organic layer contains the fullerene derivative according to claim 1 .

6 . A solid-state imaging device comprising the photoelectric conversion element according to claim 5 .

7 . A method for producing the fullerene derivative according to claim 1 , including

a process of reacting a fullerene and a compound represented by the following Formula (2) in the presence of a base:

(in Formula (2), X represents a halogen atom, and Rf 1 and Rf 2 are the same as those in Formula (1)).

8 . The method for producing a fullerene derivative according to claim 7 ,

wherein the base is at least one selected from the group consisting of a metal hydroxide, a metal carbonate, a metal alkoxide, pyridine, triethylamine, and diazabicycloundecene.

9 . The method for producing a fullerene derivative according to claim 8 ,

wherein the base is at least one selected from the group consisting of sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, cesium carbonate, sodium ethoxide, potassium ethoxide, potassium-tert-butoxide, pyridine, triethylamine, and diazabicycloundecene.

10 . The method for producing a fullerene derivative according to claim 7 ,

wherein X is iodine.

11 . The method for producing a fullerene derivative according to claim 7 ,

wherein the fullerene is C 60 , C 70 , C 74 , C 76 , or C 78 .

12 . The method for producing a fullerene derivative according to claim 7 ,

wherein a phase-transfer catalyst is used in the process of reacting the fullerene and the compound represented by Formula (2).

13 . The method for producing a fullerene derivative according to claim 12 ,

wherein the phase-transfer catalyst is at least one selected from the group consisting of 18-crown-6-ether, 15-crown-5-ether, and polyethylene glycol dimethyl ether.

14 . The method for producing a fullerene derivative according to claim 7 ,

wherein the process of reacting the fullerene and the compound represented by Formula (2) is performed at a temperature of −50° C. to 50° C.

15 . The method for producing a fullerene derivative according to claim 7 , further including

a process of mixing the fullerene and a solvent before the process of reacting the fullerene and the compound represented by Formula (2).