Bracing structure, semiconductor device with the same, and method for fabricating the same

1 . A support bracing structure, comprising:

a first bracing layer comprising:

two connection portions respectively positioned on top surfaces of two adjacent bottom electrodes; and

a frame portion bridging the two connection portions;

a protection layer comprising:

a first portion positioned on and conforming to an inner surface of the frame portion and positioned between the two connection portions; and

a second portion; and

a second bracing layer;

wherein the inner surface of the frame portion is normal to the top surfaces of the two adjacent bottom electrodes;

wherein the two adjacent bottom electrodes respectively comprises:

a bottom portion oriented perpendicular to the inner surface of the frame portion; and

a sidewall portion extending normally and upwardly from a border of the bottom portion;

wherein the first bracing layer is positioned on the sidewall portion;

wherein the second portion of the protection layer is positioned on and conforming to an outer surface of the sidewall portion and connecting to the first portion of the protection layer, wherein the outer surface of the sidewall portion is oriented perpendicular to the bottom portion;

wherein the second bracing layer is positioned on and conforming to an outer surface of the second portion of the protection layer, and connecting to the first bracing layer, wherein the outer surface of the second portion of the protection layer is oriented parallel to the outer surface of the sidewall portion.

2 . The semiconductor device of claim 1 , wherein a bottom surface of the frame portion is lower than the top surfaces of the two adjacent bottom electrodes.

3 . The semiconductor device of claim 1 , wherein a bottom surface of the first portion of the protection layer and a bottom surface of the frame portion are substantially coplanar.

4 . The semiconductor device of claim 1 , wherein the first portion of the protection layer is positioned between and in contact with outer surfaces of the two adjacent bottom electrodes, which are oriented perpendicular to the top surfaces of the two adjacent bottom electrodes.

5 . The semiconductor device of claim 1 , wherein a top surface of the sidewall portion comprises an exposed segment and an intact segment, and the first bracing layer is partially positioned on the exposed segment.

6 . The semiconductor device of claim 1 , wherein the sidewall portion comprises a circular cross-sectional profile in a top-view perspective.

7 . A semiconductor device, comprising:

a substrate;

at least two bottom electrodes positioned over the substrate and adjacent to each other; and

a support bracing structure bridging the at least two bottom electrodes, wherein the support bracing structure comprises:

a first bracing layer positioned on both top surfaces of the at least two adjacent bottom electrodes;

wherein the first bracing layer comprises:

two connection portions respectively positioned on top surfaces of the at least two adjacent bottom electrodes; and

a frame portion bridging the two connection portions;

wherein the support bracing structure comprises a protection layer comprising a first portion positioned on and conforming to an inner surface of the frame portion and positioned between the two connection portions, and the inner surface of the frame portion is normal to the top surfaces of the at least two adjacent bottom electrodes;

wherein the at least two adjacent bottom electrodes respectively comprises:

a bottom portion oriented perpendicular to the inner surface of the frame portion; and

a sidewall portion extending normally and upwardly from a border of the bottom portion;

wherein the first bracing layer is positioned on the sidewall portion;

wherein the protection layer comprises a second portion positioned on and conforming to an outer surface of the sidewall portion and connecting to the first portion of the protection layer, wherein the outer surface of the sidewall portion is oriented perpendicular to the bottom portion;

wherein the support bracing structure comprises a second bracing layer positioned on and conforming to an outer surface of the second portion of the protection layer, and connecting to the first bracing layer, and the outer surface of the second portion of the protection layer is oriented parallel to the outer surface of the sidewall portion.

8 . The semiconductor device of claim 7 , wherein a bottom surface of the frame portion is lower than the top surfaces of the at least two adjacent bottom electrodes.

9 . The semiconductor device of claim 7 , wherein a bottom surface of the first portion of the protection layer and a bottom surface of the frame portion are substantially coplanar.

10 . The semiconductor device of claim 7 , wherein the first portion of the protection layer is positioned between and in contact with outer surfaces of the at least two adjacent bottom electrodes, which are oriented perpendicular to the top surfaces of the at least two adjacent bottom electrodes.

11 . The semiconductor device of claim 7 , wherein a top surface of the sidewall portion comprises an exposed segment and an intact segment, and the first bracing layer is partially positioned on the exposed segment.

12 . The semiconductor device of claim 7 , wherein the sidewall portion comprises a circular cross-sectional profile in a top-view perspective.