Composition for treating semiconductor and method for treating object to be treated

1 . A composition for treating a semiconductor, comprising:

a quaternary ammonium salt having a hydroxyl group;

a polar organic solvent;

at least one nitrogen-containing compound selected from the group consisting of a compound represented by Formula (1), a compound represented by Formula (2), and salts thereof; and

water,

wherein a mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is 0.00001 to 0.10,

and the quaternary ammonium salt includes an ammonium catin represented by Formula (3) or an ammonium cation represented by Formula (4),

in Formula (1), R 12 represents an amino group or an alkyl group having 1 to 16 carbon atoms, R 13 and R 14 each independently represent a hydrogen atom or an alkyl group having 1 to 16 carbon atoms, and the alkyl group may have one or more groups selected from the group consisting of a hydroxyl group and an —O— group, and R 12 and R 13 , R 13 and R 14 , and R 12 and R 14 may be each independently bonded to each other to form a ring structure,

in Formula (2), R 15 represents an alkylene group having 1 to 16 carbon atoms which may have an —O— group, and R 16 , R 17 , R 18 , and R 19 each independently represent an alkyl group having 1 to 16 carbon atoms, and the alkyl group may have one or more groups selected from the group consisting of a hydroxyl group and an —O— group,

in Formula (3), R 1 , R 3 , and R 4 each independently represent an alkyl group having 1 to 16 carbon atoms, and the alkyl group may have one or more groups selected from the group consisting of a hydroxyl group and an —O— group, R 2 represents an alkylene group having 1 to 16 carbon atoms which may have an —O— group, and one of R 1 and R 3 , R 3 and R 4 , or R 1 and R 4 is bonded to another to form a ring structure,

in Formula (4), R 5 , R 6 , and R 7 each independently represent an alkylene group having 1 to 16 carbon atoms which may have an —O— group, and R 8 , R 9 , R 10 , and R 11 each independently represent an alkyl group having 1 to 16 carbon atoms, and the alkyl group may have one or more groups selected from the group consisting of a hydroxyl group and an —O— group.

2 . The composition for treating a semiconductor according to claim 1 ,

wherein a content of the nitrogen-containing compound is 0.0001% to 1.00% by mass with respect to a total mass of the composition for treating a semiconductor.

3 . The composition for treating a semiconductor according to claim 1 ,

wherein a content of the polar organic solvent is 15% to 85% by mass with respect to a total mass of the composition for treating a semiconductor.

4 . The composition for treating a semiconductor according to claim 1 ,

wherein the composition contains two or more types of the polar organic solvents.

5 . The composition for treating a semiconductor according to claim 1 ,

wherein the polar organic solvent has a hydroxyl group.

6 . The composition for treating a semiconductor according to claim 1 ,

wherein the quaternary ammonium salt does not include an ammonium cation in which R 1 , R 3 , and R 4 in Formula (3) are methyl groups and R 2 in Formula (3) is an ethylene group.

7 . The composition for treating a semiconductor according to claim 1 , further comprising:

a metal component containing at least one metal element selected from the group consisting of Cr, Fe, and Cu,

wherein a content of the metal element is 1 ppt by mass to 1 ppm by mass with respect to a total mass of the composition for treating a semiconductor.

8 . The composition for treating a semiconductor according to claim 7 ,

wherein a ratio of the content of the metal element to a content of the nitrogen-containing compound is 1×10 −7 to 1.

9 . The composition for treating a semiconductor according to claim 1 , further comprising:

a surfactant.

10 . The composition for treating a semiconductor according to claim 9 ,

wherein the surfactant is a nonionic surfactant having an HLB value of 12.0 to 15.0.

11 . The composition for treating a semiconductor according to claim 1 ,

wherein the composition is used for treating an object to be treated containing silicon and silicon germanium.

12 . A method for treating an object to be treated, comprising:

bringing an object to be treated containing silicon and silicon germanium into contact with the composition for treating a semiconductor according to claim 1 to remove the silicon.

13 . The composition for treating a semiconductor according to claim 2 ,

wherein a content of the polar organic solvent is 15% to 85% by mass with respect to a total mass of the composition for treating a semiconductor.

14 . The composition for treating a semiconductor according to claim 2 ,

wherein the composition contains two or more types of the polar organic solvents.

15 . The composition for treating a semiconductor according to claim 2 ,

wherein the polar organic solvent has a hydroxyl group.

16 . A composition for treating a semiconductor, comprising:

a quaternary ammonium salt having a hydroxyl group;

a polar organic solvent;

at least one nitrogen-containing compound selected from the group consisting of a compound represented by Formula (1), a compound represented by Formula (2), and salts thereof; and

water,

wherein the composition has a pH of 11.0 or more, and a mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is 0.00001 to 0.10,

in Formula (1), R 12 represents an amino group or an alkyl group having 1 to 16 carbon atoms, R 13 and R 14 each independently represent a hydrogen atom or an alkyl group having 1 to 16 carbon atoms, and the alkyl group may have one or more groups selected from the group consisting of a hydroxyl group and an —O— group, and R 12 and R 13 , R 13 and R 14 , and R 12 and R 14 may be each independently bonded to each other to form a ring structure,

in Formula (2), R 15 represents an alkylene group having 1 to 16 carbon atoms which may have an —O— group, and R 16 , R 17 , R 18 , and R 19 each independently represent an alkyl group having 1 to 16 carbon atoms, and the alkyl group may have one or more groups selected from the group consisting of a hydroxyl group and an —O— group.

17 . A composition for treating a semiconductor, comprising:

a quaternary ammonium salt having a hydroxyl group;

a polar organic solvent;

at least one nitrogen-containing compound selected from the group consisting of a compound represented by Formula (1), a compound represented by Formula (2), and salts thereof; and

water,

wherein a mass ratio of the nitrogen-containing compound to the quaternary ammonium salt is 0.00001 to 0.10,

and the quaternary ammonium salt includes at least one or more selected from the group consisting of dimethylbis (2-hydroxyethyl) ammonium hydroxide, methyltris (2-hydroxyethyl) ammonium hydroxide, 4-methyl-4-(2-hydroxyethyl) morpholinium hydroxide, and oxydiethylenebis [dimethyl (2-hydroxyethyl) ammonium hydroxide],

in Formula (1), R12 represents an amino group or an alkyl group having 1 to 16 carbon atoms, R 13 and R 14 each independently represent a hydrogen atom or an alkyl group having 1 to 16 carbon atoms, and the alkyl group may have one or more groups selected from the group consisting of a hydroxyl group and an —O— group, and R 12 and R 13 , R 13 and R 14 , and R 12 and R 14 may be each independently bonded to each other to form a ring structure,

in Formula (2), R 15 represents an alkylene group having 1 to 16 carbon atoms which may have an —O— group, and R 16, R 17 , R 18 , and R 19 each independently represent an alkyl group having 1 to 16 carbon atoms, and the alkyl group may have one or more groups selected from the group consisting of a hydroxyl group and an—O— group.