Method of wafer dicing and manufacturing method of semiconductor devices using the same
Provided is a method of dicing a wafer, the method including preparing a wafer having a plurality of device formation regions and a scribe lane region defining the plurality of device formation regions, forming a plurality of semiconductor devices in the plurality of device formation regions of the wafer, irradiating a first laser beam and a second laser beam of a wavelength different from the first laser beam along the scribe lane region to form a plurality of internal cracks in the wafer, and separating the plurality of semiconductor devices along the plurality of internal cracks, wherein the first laser beam includes a plurality of pulses sequentially emitted from a laser apparatus, and the second laser beam is continuous wave light emitted from the laser apparatus.
1 . A method of dicing a wafer, the method comprising:
forming a plurality of semiconductor devices in a plurality of device formation regions of a wafer having a scribe lane region defining the plurality of device formation regions;
irradiating a first laser beam and a second laser beam of a wavelength different from the first laser beam along the scribe lane region to form a plurality of internal cracks in the wafer; and
separating the plurality of semiconductor devices along the plurality of internal cracks;
wherein the first laser beam comprises a plurality of pulses sequentially emitted from a laser apparatus, and the second laser beam is continuous wave light that is emitted from the laser apparatus.
2 . The method of claim 1 , wherein the first laser beam and the second laser beam are irradiated along a same optical path as each other.
3 . The method of claim 1 ,
wherein the first laser beam has a wavelength that is smaller than the second laser beam, and
the second laser beam is irradiated along the scribe lane region prior to each of the plurality of pulses of the first laser beam.
4 . The method of claim 1 ,
wherein the first laser beam is focused at a focusing point that is one point of the scribe lane region, and
the second laser beam is not focused on the focusing point.
5 . The method of claim 4 ,
wherein the second laser beam heats a lower region of the focusing point, and
the second laser beam irradiates the scribe lane region prior to the first laser beam.
6 . The method of claim 5 , wherein the second laser beam heats the lower region of the focusing point within a range of about 40 Kelvin (K) to about 120 K.
7 . The method of claim 1 , wherein a portion of the second laser beam overlaps the plurality of pulses of the first laser beam to irradiate the scribe lane region.
8 . The method of claim 1 ,
wherein the first laser beam has a wavelength in a range of about 800 nm to about 1200 nm, and
the second laser beam has a wavelength in a range of about 1400 Nanometer (nm) to about 2000 nm.
9 . The method of claim 1 , wherein a scanning direction of the second laser beam is identical to a scanning direction of the first laser beam.
10 . The method of claim 1 ,
wherein the plurality of pulses of the first laser beam form a plurality of internal cracks in the scribe lane region, and
the second laser beam heats the plurality of internal cracks and a region between the pluralities of internal cracks.
11 . A method of manufacturing a semiconductor device, the method comprising:
forming a plurality of semiconductor devices in a plurality of device formation regions of a wafer having a scribe lane region defining the plurality of device formation regions;
irradiating a first laser beam and a second laser beam along the scribe lane region to form a plurality of horizontally spaced apart internal cracks in the wafer,
wherein the first laser beam is pulsed wave light having a wavelength in a range of about 800 Nanometer (nm) to about 1200 nm and comprises a plurality of pulses, and the second laser beam is continuous wave light having a wavelength in a range of about 1400 nm to about 2000 nm;
separating the plurality of semiconductor devices along the plurality of internal cracks; and
packaging each of the plurality of separated semiconductor devices.
12 . The method of claim 11 ,
wherein the second laser beam has power in a range of about 5 Watts (W) to about 10 W, and
the second laser beam heats a lower region of a focusing point within a range of about 40 Kelvin (K) to about 120 K.
13 . The method of claim 11 , wherein the second laser beam is irradiated to the scribe lane region prior to the plurality of pulses of the first laser beam.
14 . The method of claim 11 ,
wherein the first laser beam and the second laser beam are generated from separate light sources in a laser apparatus and are combined in an optical coupler in the laser apparatus, and
the first laser beam and the second laser beam are emitted from the laser apparatus and have a same optical path to the scribe lane region.
15 . The method of claim 11 ,
wherein the first laser beam is irradiated so as to be focused on a focusing point that is one point of the scribe lane region, and
the second laser beam is not focused on the focusing point.
16 . The method of claim 11 ,
wherein the plurality of pulses of the first laser beam each overlap the second laser beam to irradiate the scribe lane region, and
the first laser beam forms a plurality of internal cracks in the scribe lane region.
17 . The method of claim 11 , further comprising grinding a back side of the wafer, prior to the forming of the plurality of internal cracks in the wafer.
18 . A method of manufacturing a semiconductor device, the method comprising:
preparing a wafer having a plurality of device formation regions and a scribe lane region defining the plurality of device formation regions;
forming a plurality of semiconductor devices in a plurality of device formation regions of the wafer having a scribe lane region defining the plurality of device formation regions;
irradiating a first laser beam and a second laser beam along the scribe lane region to form a plurality of horizontally spaced apart internal cracks in the wafer,
wherein the first laser beam is pulsed wave light having a wavelength in a range of about 800 Nanometer (nm) to about 1200 nm and comprises a plurality of pulses, and the second laser beam is continuous wave light having a wavelength in a range of about 1400 nm to about 2000 nm;
separating the plurality of semiconductor devices along the plurality of internal cracks; and
packaging each of the plurality of separated semiconductor devices,
wherein the first laser beam is irradiated so as to be focused on a focusing point that is one point of the scribe lane region, and
the second laser beam is not focused on the focusing point but is irradiated along the scribe lane region prior to the plurality of pulses of the first laser beam.
19 . The method of claim 18 , wherein a portion of the second laser beam overlaps the plurality of pulses of the first laser beam, and the remainder of the second laser beam is not overlapped with the plurality of pulses of the first laser beam.
20 . The method of claim 18 ,
wherein the second laser beam heats the scribe lane region without forming the plurality of internal cracks,
wherein the second laser beam has power in a range of about 5 Watts (W) to about 10 W, and
the second laser beam heats a lower region of the focusing point within a range of about 40 Kelvin (K) to about 120 K.