IP Library Granted Patent US 12696725
Granted Patent B2
US 12696725 · App. 18/772,486 · Granted Jul 28, 2026

Method, apparatus, and system for wafer grounding

Inventors: Yixiang Wang (Fremont, CA); Shibing Liu (San Jose, CA); Shanhui Cao (San Jose, CA); Kangsheng Qiu (San Jose, CA); Juying Dou (San Jose, CA); Ying Luo (San Jose, CA); Yinglong Li (San Jose, CA); Qiang Li (Campbell, CA); Ronald Van Der Wilk (Knegsel, NL); Jan-Gerard Cornelis Van Der Toorn (Eindhoven, NL)
Assignee: ASML Netherlands B.V.
H10P72/722H01J37/20H10P90/124H01J2237/0044
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Quick Facts
Patent No.
US 12696725
App. No.
18/772,486
Granted
Jul 28, 2026
Kind
B2
Abstract

Systems and methods for wafer grounding and wafer grounding location adjustment are disclosed. A first method may include receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal; determining a first control parameter using at least the first value; and controlling a characteristic of the electric signal using the first control parameter and the first value. A second method for adjusting a grounding location for a wafer may include terminating an electric connection between the wafer and at least one grounding pin in contact the wafer; adjusting a relative position between the wafer and the grounding pin; and restoring the electric connection between the grounding pin and the wafer. A third method may include causing a grounding pin to penetrate through a coating on the wafer by impact; and establishing an electrical connection between the grounding pin and the wafer.

Claims (36)

1 . A method for grounding a wafer, the method comprising:

receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal;

determining a first control parameter based on a comparison of the first value and a target value of the electric characteristic; and

controlling a characteristic of the electric signal using the first control parameter and the first value.

2 . The method of claim 1 , wherein the electric characteristic is associated with an electric path comprising the wafer and a wafer mount supporting the wafer.

3 . The method of claim 2 , further comprising:

based on a determination that a resistance of the electric path is greater than or equal to a predetermined threshold value, determining a second control parameter using at least the first value, wherein the second control parameter and the first control parameter have different values; and

controlling the characteristic of the electric signal using the second control parameter and the first value.

4 . The method of claim 1 , wherein determining the first control parameter comprises:

determining whether a difference between the first value and the target value satisfies a threshold condition; and

determining the first control parameter based on a determination that the difference satisfies the threshold condition.

5 . A method for grounding a wafer, the method comprising:

receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal;

determining a first control parameter using at least the first value;

controlling a characteristic of the electric signal using the first control parameter and the first value; and

wherein the electric characteristic comprises at least one of an impedance, a resistance, a capacitive reactance, an admittance, a conductance, or a capacitive susceptance.

6 . The method of claim 5 , wherein the electric characteristic comprises one of a resistance between the wafer and a wafer mount or a capacitive reactance between the wafer and the wafer mount.

7 . The method of claim 1 , wherein a threshold condition comprises the first value being smaller than or equal to a target value.

8 . The method of claim 1 , wherein determining the first control parameter comprises:

determining an initial parameter using at least the first value; and

determining the first control parameter based on at least the initial parameter, the first value, the target value, and a type of the wafer.

9 . The method of claim 1 , wherein the characteristic of the electric signal comprises at least one of a voltage, a current, a profile of the voltage or the current, a frequency of the profile, a period of the profile, a phase of the profile, an amplitude of the profile, or a duration of the voltage or the current.

10 . The method of claim 1 , wherein controlling the characteristic of the electric signal using the first control parameter and the first value comprises:

changing a value of the characteristic of the electric signal using the first control parameter and the first value.

11 . The method of claim 1 , wherein controlling the characteristic of the electric signal comprises:

lowering a voltage of the electric signal.

12 . The method of claim 1 , further comprising:

receiving a second value of the electric characteristic after controlling the characteristic of the electric signal using the first control parameter and the first value;

determining a third control parameter using at least the second value, wherein the third control parameter and the first control parameter have different values; and

controlling the characteristic of the electric signal using the third control parameter and the second value.

13 . A system for grounding a wafer, the system comprising:

a sensor configured to generate a first value of an electric characteristic associated with the wafer being grounded by an electric signal;

an electric signal generator configured to generate the electric signal; and

a controller including circuitry for receiving the first value of the electric characteristic, determining a first control parameter based on a comparison of the first value and a target value of the electric characteristic, and controlling a characteristic of the electric signal using the first control parameter and the first value.

14 . The system of claim 13 , further comprising:

a grounding pin, electrically connected between the electric signal generator and the wafer.