Susceptor and method for manufacturing nitride semiconductor light-emitting element

1 . A method for manufacturing a nitride semiconductor light-emitting element using a susceptor, comprising a pocket in which a wafer is placed, wherein a side surface of the pocket comprises a side-surface circumference portion formed in a circumference shape and two side-surface enlarged portions formed on both sides of the pocket in a rotational direction of the susceptor, each side-surface enlarged portion being formed to extend toward an outer circumferential side of the pocket beyond the side-surface circumference portion, wherein in a plan view seen from an open side of the pocket, when a straight line passing through a rotational center of the susceptor and a circumferential center of the side-surface circumference portion is defined as a first straight line and a straight line orthogonal to the first straight line and passing through the circumferential center is defined as a second straight line, the side-surface enlarged portion overlaps the second straight line, and wherein the two side-surface enlarged portions are line symmetric with respect to the first straight line, the method comprising:

placing a substrate in the pocket; and

epitaxially growing a semiconductor layer comprising a nitride semiconductor on the substrate while heating and rotating the susceptor,

wherein a value obtained by dividing a sum of lengths of the two side-surface enlarged portions in the circumferential direction of the pocket by a circumferential length of the substrate satisfies not less than 0.200 and not more than 0.440.

2 . The method according to claim 1 , wherein a value obtained by dividing a longest straight-line distance from the circumferential center to the side-surface enlarged portion in the plan view seen from the open side of the pocket by a radius of the substrate satisfies not less than 1.004 and not more than 1.050.