Compressive films for large area gapfill
Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the semiconductor processing chamber. The methods may include forming a silicon-containing material on the substrate. The silicon-containing material may be characterized by a stress of greater than or about −200 MPa. The methods may include annealing the substrate at a temperature of greater than or about 700° C.
1 . A semiconductor processing method comprising:
providing a silicon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate defining one or more features is disposed within the semiconductor processing chamber;
forming a silicon-containing material on the substrate, wherein the silicon-containing material is characterized by a stress of greater than or about-200 MPa; and
annealing the substrate at a temperature of greater than or about 700° C.
2 . The semiconductor processing method of claim 1 , wherein the silicon-containing precursor comprises silane (SiH 4 ), disilane (Si 2 H 6 ), or trisilane (Si 3 H 8 ).
3 . The semiconductor processing method of claim 1 , wherein a temperature within the semiconductor processing chamber is maintained at less than or about 600° C. while forming the silicon-containing material.
4 . The semiconductor processing method of claim 1 , wherein a pressure within the semiconductor processing chamber is maintained at less than or about 350 T.
5 . The semiconductor processing method of claim 1 , further comprising:
providing an oxygen-containing precursor with the silicon-containing precursor.
6 . The semiconductor processing method of claim 1 , wherein the semiconductor processing chamber is maintained plasma-free while forming the silicon-containing material.
7 . The semiconductor processing method of claim 1 , wherein, subsequent to annealing the silicon-containing material, the silicon-containing material is characterized by a shrinkage of less than or about 5%.
8 . The semiconductor processing method of claim 1 , further comprising:
subsequent to forming the silicon-containing material, providing an inert precursor to the processing region of the semiconductor processing chamber;
forming plasma effluents of the inert precursor; and
contacting the silicon-containing material with the plasma effluents of the inert precursor.
9 . The semiconductor processing method of claim 8 , wherein the inert precursor comprises argon.
10 . The semiconductor processing method of claim 8 , further comprising:
providing an oxygen-containing precursor with the inert precursor.
11 . A semiconductor processing method comprising:
providing a silicon-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate comprising one or more features is disposed within the semiconductor processing chamber, and wherein the silicon-containing precursor comprises disilane (Si 2 H 6 );
forming a silicon-containing material on the substrate, wherein the silicon-containing material is characterized by a stress of greater than or about −200 MPa; and
annealing the substrate at a temperature of greater than or about 700° C., wherein the silicon-containing material is characterized by a shrinkage of less than or about 5%.
12 . The semiconductor processing method of claim 11 , wherein the silicon-containing material is characterized by a breakdown of greater than or about 5 MV/cm.
13 . The semiconductor processing method of claim 11 , wherein annealing the substrate comprises contacting the substrate with a nitrogen-containing precursor.
14 . The semiconductor processing method of claim 11 , further comprising:
performing a plasma treatment with an inert precursor subsequent to forming the silicon-containing material.
15 . The semiconductor processing method of claim 14 , wherein the plasma treatment is performed at a lower pressure than the forming of the silicon-containing material.
16 . The semiconductor processing method of claim 14 , wherein the inert precursor comprises argon.
17 . A semiconductor processing method comprising:
providing a silicon-containing precursor and an oxygen-containing precursor to a processing region of a semiconductor processing chamber, wherein a substrate defining one or more features is disposed within the semiconductor processing chamber;
forming a silicon-containing material on the substrate, wherein the silicon-containing material is characterized by a stress of greater than or about −200 MPa;
providing an inert precursor to the processing region of the semiconductor processing chamber;
forming plasma effluents of the inert precursor;
contacting the silicon-containing material with the plasma effluents of the inert precursor; and
annealing the substrate.
18 . The semiconductor processing method of claim 17 , wherein the silicon-containing material is characterized by a shrinkage of less than or about 5%.
19 . The semiconductor processing method of claim 17 , wherein a thickness of the silicon-containing material is less than or about 30 Å.