Handler wafer with low overlay residual backside patterning

1 . A semiconductor device, comprising:

a device wafer including a silicon layer, an interconnect, and a first bonding oxide layer, wherein the interconnect is located between the first bonding oxide layer and the silicon layer; and

a handler wafer bonded to the device wafer, wherein the handler wafer includes a 111 crystallographic direction silicon substrate, wherein the handler wafer includes a second bonding oxide layer, wherein the second bonding oxide is in direct contact with the silicon substrate, wherein the second bonding oxide layer is in direct contact with the first bonding oxide layer;

wherein a backside of the device wafer is covered by multilevel wiring layers;

wherein the multilevel wiring layers include a backside power delivery network (BSPDN).

2 . The semiconductor device of claim 1 , wherein the silicon wafer has a thickness of less than 1 micrometer.

3 . The semiconductor device of claim 2 , wherein a backside of the device wafer is covered by one or more integrated devices.

4 . The semiconductor device of claim 1 , wherein the device wafer further includes patterned devices on a frontside surface.

5 . The semiconductor device of claim 1 , wherein the interconnect includes one or more levels of middle of line/back end of line (MOL/BEOL).

6 . The semiconductor device of claim 1 , wherein the silicon wafer includes a 100 crystallographic direction or a 110 crystallographic direction silicon wafer.

7 . A method for formation of a semiconductor device, the method comprising:

forming a device wafer, wherein the device wafer includes a first silicon substrate layer, an interconnect, and a first bonding oxide layer, wherein the interconnect is located between the first bonding oxide layer and the first silicon substrate layer;

forming a handler wafer, wherein the handler wafer includes a second bonding oxide layer;

bonding the handler wafer to the device wafer, wherein the handler wafer includes a 111 crystallographic direction second silicon substrate, wherein the second bonding oxide is in direct contact with the second silicon substrate, wherein the second bonding oxide layer is in direct contact with the first bonding oxide layer; and removing portions of the first silicon substrate layer;

covering a backside of the device wafer with multilevel wiring layers;

wherein the multilevel wiring layers include a backside power delivery network (BSPDN).

8 . The method of claim 7 , further comprising covering a backside of the device wafer by one or more integrated devices.

9 . The method of claim 7 , further comprising forming patterned devices a frontside surface of the device wafer.

10 . The method of claim 7 , wherein the interconnect includes one or more levels of middle of line/back end of line (MOL/BEOL).

11 . The method of claim 7 , wherein removing portions of the first silicon substrate includes utilizing one or more of: grinding, chemical mechanical polishing, wet etching, and dry etching.

12 . A method of formation of a semiconductor device, the method comprising:

forming a device wafer, wherein the device wafer includes a silicon layer, an interconnect, and a first bonding oxide layer, wherein the interconnect is located between the first bonding oxide layer and the silicon layer; and

bonding a handler wafer to the device wafer, wherein the handler wafer includes a second bonding oxide layer, wherein the handler wafer includes a 111 crystallographic direction silicon substrate, wherein the second bonding oxide is in direct contact with the silicon substrate, wherein the second bonding oxide layer is in direct contact with the first bonding oxide layer;

wherein a backside of the device wafer is covered by multilevel wiring layers;

wherein the multilevel wiring layers include a backside power delivery network (BSPDN).