Semiconductor device and method for manufacturing the same
The present disclosure relates to a semiconductor device and a method for manufacturing the same, and an object thereof is to provide a semiconductor and a method for manufacturing the same, the semiconductor device not diffusing a material of a metal layer to a semiconductor substrate. A semiconductor device of the present disclosure includes a semiconductor substrate which is formed of GaAs, a first barrier layer which is formed of an alloy containing Ni on the semiconductor substrate, a second barrier layer which is formed of Co or an alloy containing Co on the first barrier layer, and a metal layer which is formed on the second barrier layer. A Ni concentration in the first barrier layer is 80 at % or lower.
1 . A semiconductor device comprising:
a semiconductor substrate which is formed of GaAs;
a first barrier layer which is formed of an alloy containing Ni on the semiconductor substrate;
a second barrier layer which is formed of Co or an alloy containing Co on the first barrier layer; and
a metal layer which is formed on the second barrier layer, wherein
a Ni concentration in the first barrier layer is 80 at % or lower.
2 . The semiconductor device according to claim 1 , comprising
a diffusion prevention layer which contains metal exhibiting catalytic activity
between the first barrier layer and the second barrier layer.
3 . The semiconductor device according to claim 2 , comprising
a deposition layer in which metal exhibiting catalytic activity is deposited
between the semiconductor substrate and the first barrier layer.
4 . The semiconductor device according to claim 1 , comprising
a deposition layer in which metal exhibiting catalytic activity is deposited
between the semiconductor substrate and the first barrier layer.
5 . A method of manufacturing a semiconductor device, the method comprising:
a step of forming a deposition layer, in which metal exhibiting catalytic activity is deposited, on a semiconductor substrate formed of GaAs;
a step of forming a first barrier layer, which is formed of an alloy containing Ni, on the deposition layer by a plating method;
a step of forming a second barrier layer, which is formed of Co or an alloy containing Co, on the first barrier layer by the plating method;
a step of forming a metal layer on the second barrier layer; and
a step of conducting a heat treatment until a Ni concentration in the first barrier layer becomes 80 at % or lower.
6 . The method of manufacturing a semiconductor device according to claim 4 , the method comprising
a step of forming a diffusion prevention layer, which contains metal exhibiting catalytic activity,
between the first barrier layer and the second barrier layer.
7 . The method of manufacturing a semiconductor device according to claim 6 , wherein
the diffusion prevention layer is formed by an evaporation method or a sputtering method.