Power semiconductor module comprising at least one power semiconductor element
A power semiconductor module includes a power semiconductor element. In order to reduce the required installation space of the power semiconductor module and to increase the service of the power semiconductor module, the power semiconductor element is connected in an electrically insulating and thermally conductive manner to a cooling element via a dielectric material layer. The dielectric material layer is laid flat on a surface of the cooling element and force-lockingly connected to the cooling element by a first force acting orthogonal to the surface of the cooling element.
1 . A power semiconductor module, comprising:
a cooling element;
a power semiconductor element including a power semiconductor;
a dielectric material layer which is laid flat on a surface of the cooling element and directly contacted on the cooling element and via which the power semiconductor element is connected in an electrically insulating and thermally conductive manner to the cooling element, said dielectric material layer connected with a non-positive fit to the cooling element by a first force acting orthogonally to the surface of the cooling element; with the power semiconductor element connected with a non-positive fit to the dielectric material layer by the first force;
a first metallic contacting element which is directly contacted on the dielectric layer and via which the power semiconductor element is laid on the dielectric material layer, with the power semiconductor materially connected to the first metallic contacting element on a side facing the dielectric material layer, and
a further power semiconductor element and a dedicated further dielectric material layer assigned to the further power semiconductor element.
2 . The power semiconductor module of claim 1 , further comprising a first conductor rail configured to transmit the first force to the power semiconductor element.
3 . The power semiconductor module of claim 2 , further comprising a second metallic contacting element connected in a planar manner to the power semiconductor on a side of the power semiconductor facing away from the dielectric material layer, said first conductor rail directly contacted to the second metallic contacting element, with the first force acting on the second metallic contacting element via the first conductor rail.
4 . The power semiconductor module of claim 3 , wherein the second metallic contacting element is materially connected to the power semiconductor.
5 . The power semiconductor module of the claim 3 , wherein the first conductor rail is connected with a non-positive fit to the second metallic contacting element.
6 . The power semiconductor module of claim 1 ,
wherein the dielectric material layer is configured to produce an adhesive connection between the power semiconductor element and the surface of the cooling element.
7 . A power semiconductor module, comprising:
a cooling element;
a power semiconductor element including a power semiconductor;
a dielectric material layer disposed flat on a surface of the cooling element and directly contacting the cooling element and connecting the power semiconductor element in an electrically insulating and thermally conductive manner to the cooling element, said dielectric material layer connected with a non-positive fit to the cooling element by a first force acting orthogonally to the surface of the cooling element: with the power semiconductor element connected with a non-positive fit to the dielectric material layer by the first force;
a first metallic contacting element disposed directly on the dielectric layer and connecting the power semiconductor element to the dielectric material layer with the power semiconductor materially connected to the first metallic contacting element on a side facing the dielectric material layer, and
a third metallic contacting element connected with a non-positive fit to the cooling element by a second force acting orthogonally to the surface of the cooling element, said power semiconductor including a control contact which is connected to the third metallic contacting element.
8 . The power semiconductor module of claim 7 , wherein the control contact of the power conductor is a gate contact.
9 . The power semiconductor module of claim 7 , wherein the control contact of the power semiconductor is connected to the third metallic contacting element by a bond connection.
10 . The power semiconductor module of claim 7 , further comprising a second conductor rail; with the second force acting on the third metallic contacting element via the second conductor rail.
11 . A method for producing a power semiconductor module, comprising:
contacting a dielectric material layer in a planar manner with a surface of a cooling element;
connecting the power semiconductor to a leadframe to form the power semiconductor element through a substance-to-substance bond, with the leadframe comprising a first metallic contacting element and a further metallic contacting element which is connected to the first metallic contacting element; and with the power semiconductor element contacted on the dielectric material layer via the leadframe;
producing a bond connection between a control contact of the power semiconductor and the further metallic contacting element of the leadframe;
applying a first force acting orthogonally to the surface of the cooling element to produce a non-positive connection of the dielectric material layer to the cooling element;
fixing each of the first metallic contacting element and the further metallic contacting element by a second force acting orthogonally to the surface of the cooling element; and
separating a connection between the first metallic contacting element and the further metallic contacting element of the leadframe.
12 . The method of claim 11 , wherein the control contact is a gate contact.
13 . The method of claim 11 , further comprising:
connecting a second metallic contacting element in a planar manner to the power semiconductor on a side of the power semiconductor facing away from the dielectric material layer;
directly contacting a first conductor rail to the second metallic contacting element such that the first force acts on the second metallic contacting element via the first conductor rail.
14 . The method of claim 13 , further comprising cohesively materially connecting the second metallic contacting element to the power semiconductor.
15 . The method of claim 13 , further comprising: connecting the first conductor rail with a non-positive fit to the second metallic contacting element.
16 . The method of claim 11 , further comprising:
connecting a control contact of the power semiconductor to the further metallic contacting element; and
connecting the further metallic contacting element with a non-positive fit to the cooling element by the second force.
17 . The method of claim 11 , further comprising connecting the control contact of the power semiconductor to the further metallic contacting element by a bond connection.