IP Library › Granted Patent US 12696787
Granted Patent B2
US 12696787 · App. 18/403,875 · Granted Jul 28, 2026

Semiconductor device and method of manufacturing semiconductor device

Inventors: Toma Takao (Tokyo, JP); Kosuke Yamaguchi (Tokyo, JP)
Assignee: Mitsubishi Electric Corporation
H10W72/50H10W72/015H10W90/753
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Quick Facts
Patent No.
US 12696787
App. No.
18/403,875
Granted
Jul 28, 2026
Kind
B2
Abstract

A semiconductor device according to the present disclosure includes: a lower arm-side MOSFET; a lower arm-side IGBT; an upper arm-side MOSFET; an upper arm-side IGBT; an upper arm-side IC that controls driving of the upper arm-side MOSFET and the upper arm-side IGBT; a MOSFET gate wire connecting a gate electrode of the upper arm-side MOSFET and the upper arm-side control IC; an IGBT gate wire connecting a gate electrode of the upper arm-side IGBT and the upper arm-side control IC; and an IGBT emitter sense wire directly connecting an emitter electrode of the upper arm-side IGBT and the upper arm-side control IC, and a source electrode of the upper arm-side MOSFET is electrically connected to the upper arm-side control IC via the emitter electrode of the upper arm-side IGBT.

Claims (36)

1 . A semiconductor device comprising:

a lower arm-side metal-oxide-semiconductor field effect transistor (MOSFET);

a lower arm-side insulated gate bipolar transistor (IGBT) connected in parallel with the lower arm-side MOSFET;

an upper arm-side MOSFET;

an upper arm-side IGBT connected in parallel with the upper arm-side MOSFET;

an upper arm-side control integrated circuit (IC) that controls driving of the upper arm-side MOSFET and the upper arm-side IGBT;

a MOSFET gate wire electrically connecting a gate electrode of the upper arm-side MOSFET and the upper arm-side control IC;

an IGBT gate wire electrically connecting a gate electrode of the upper arm-side IGBT and the upper arm-side control IC; and

an IGBT emitter sense wire electrically directly connecting an emitter electrode of the upper arm-side IGBT and the upper arm-side control IC,

wherein a source electrode of the upper arm-side MOSFET is electrically connected to the upper arm-side control IC via the emitter electrode of the upper arm-side IGBT.

2 . The semiconductor device according to claim 1 , further comprising:

a source-emitter wire electrically connecting the source electrode of the upper arm-side MOSFET and the emitter electrode of the upper arm-side IGBT; and

a main current emitter wire electrically connected to the emitter electrode of the upper arm-side IGBT while being separated from the source-emitter wire.

3 . The semiconductor device according to claim 1 , further comprising:

a source-emitter wire electrically connecting a source electrode of the lower arm-side MOSFET and an emitter electrode of the lower arm-side IGBT; and

a main current emitter wire electrically connected to the emitter electrode of the lower arm-side IGBT while being separated from the source-emitter wire.

4 . The semiconductor device according to claim 1 , further comprising:

a MOSFET source wire electrically connected to the source electrode of the upper arm-side MOSFET; and

a main current emitter wire electrically connected to the emitter electrode of the upper arm-side IGBT.

5 . The semiconductor device according to claim 1 , further comprising:

a MOSFET source wire electrically connected a source electrode of the lower arm-side MOSFET; and

a main current emitter wire electrically connected to an emitter electrode of the lower arm-side IGBT.

6 . The semiconductor device according to claim 1 , wherein the upper arm-side MOSFET and the upper arm-side IGBT are provided side by side along an extending direction of the upper arm-side control IC.

7 . The semiconductor device according to claim 1 , wherein the upper arm-side MOSFET is provided closer to the upper arm-side control IC than the upper arm-side IGBT.

8 . The semiconductor device according to claim 2 , wherein a diameter of the IGBT emitter sense wire is smaller than a diameter of the source-emitter wire and a diameter of the main current emitter wire.

9 . The semiconductor device according to claim 1 , wherein the lower arm-side MOSFET, the lower arm-side IGBT, the upper arm-side MOSFET, and the upper arm-side IGBT are each formed of a wide band gap semiconductor.

10 . A method of manufacturing a semiconductor device, comprising the steps of:

providing a lower arm-side metal-oxide-semiconductor field effect transistor (MOSFET);

providing a lower arm-side insulated gate bipolar transistor (IGBT) so as to connect the same in parallel with the lower arm-side MOSFET;

providing an upper arm-side MOSFET;

providing an upper arm-side IGBT so as to connect the same in parallel with the upper arm-side MOSFET;

providing an upper arm-side control integrated circuit (IC) that controls driving of the upper arm-side MOSFET and the upper arm-side IGBT;

providing a MOSFET gate wire electrically connecting a gate electrode of the upper arm-side MOSFET and the upper arm-side control IC;

providing an IGBT gate wire electrically connecting a gate electrode of the upper arm-side IGBT and the upper arm-side control IC; and

providing an IGBT emitter sense wire electrically directly connecting an emitter electrode of the upper arm-side IGBT and the upper arm-side control IC,

wherein a source electrode of the upper arm-side MOSFET is electrically connected to the upper arm-side control IC via the emitter electrode of the upper arm-side IGBT.