Semiconductor device and method for manufacturing semiconductor device
A semiconductor device includes an insulation layer, wires, a semiconductor element, and an encapsulation resin. The insulation layer includes a main surface and a back surface facing opposite in a thickness-wise direction and a side surface formed between the main surface and the back surface in the thickness-wise direction. The wires include an embedded portion embedded in the insulation layer and a redistribution portion formed of a metal film joined to the embedded portion and formed from the back surface to the side surface. The semiconductor element is mounted on the main surface and includes electrodes joined to at least part of the embedded portion of the wires. The encapsulation resin contacts the main surface and covers the semiconductor element.
1 . A semiconductor device, comprising:
an insulation layer including a main surface, a back surface, and a side surface,
the main surface and the back surface facing in opposite directions in a thickness-wise direction, and
the side surface being formed between the main surface and the back surface in the thickness-wise direction;
wires including an embedded portion and a redistribution portion,
at least part of the embedded portion being embedded in the insulation layer, and
the redistribution portion being formed of a metal film joined to the embedded portion and continuously extending from the back surface to the side surface;
a semiconductor element mounted on the main surface and including electrodes joined to at least part of the embedded portion of the wires; and
an encapsulation resin in contact with the main surface and covering the semiconductor element, wherein
the redistribution portion includes a first portion extending along the side surface, and at least a part of a top surface of the first portion is in contact with the encapsulation resin at a boundary between the encapsulation resin and the insulation layer,
the encapsulation resin includes a first resin portion located toward the insulation layer in the thickness-wise direction,
the first resin portion includes a first side surface facing in the same direction as the side surface of the insulation layer,
the encapsulation resin includes a second resin portion located at a side opposite from the insulation layer in the thickness-wise direction,
the second resin portion is greater in size than the first resin portion in a direction orthogonal to the thickness-wise direction,
the second resin portion includes a second side surface facing in the same direction as the first side surface, and
the first side surface of the first resin portion is located inward from the second side surface of the second resin portion.
2 . The semiconductor device according to claim 1 , wherein the redistribution portion is formed on an entirety of the side surface of the insulation layer in the thickness-wise direction.
3 . The semiconductor device according to claim 1 , wherein the encapsulation resin includes a step that is formed by a difference in size between the first resin portion and the second resin portion and recessed inside the encapsulation resin.
4 . The semiconductor device according to claim 1 , wherein
the semiconductor element includes an element main surface and an element back surface facing in opposite directions,
the electrodes are disposed on the element back surface,
the semiconductor element is embedded in the encapsulation resin so that the element back surface and the electrodes are exposed,
the insulation layer includes a first cover covering the element back surface and the electrodes of the semiconductor element and a second cover covering at least part of the first side surface of the first resin portion, and
the second cover includes a side surface defining the side surface of the insulation layer.
5 . The semiconductor device according to claim 1 , wherein the side surface of the insulation layer includes an inclined surface inclined with respect to the thickness-wise direction.
6 . The semiconductor device according to claim 1 , wherein the insulation layer includes a groove including a back groove recessed from the back surface in the thickness-wise direction and a side groove recessed from the side surface in a direction orthogonal to the thickness-wise direction.
7 . The semiconductor device according to claim 6 , wherein
the insulation layer is formed from a material including a thermosetting synthetic resin and an additive including a metallic element forming a part of the wires,
the redistribution portion includes a base layer in contact with the groove and a plating layer covering the base layer, and
the base layer is formed of the metallic element included in the additive.
8 . The semiconductor device according to claim 1 , wherein the insulation layer is formed from a material including a thermosetting synthetic resin and an additive including a metallic element forming a part of the wires.
9 . A method for manufacturing a semiconductor device, the method comprising:
an element embedding step of embedding a semiconductor element in an encapsulation resin so that an electrode disposed on a side of the semiconductor element in a thickness-wise direction is exposed from a resin back surface;
an insulation layer forming step of forming an insulation layer including a main surface and a back surface facing in opposite directions,
the main surface covering the resin back surface of the encapsulation resin and the electrode;
a side surface forming step of forming a side surface in the insulation layer that intersects the back surface; and
a wire forming step of forming an embedded portion embedded in the insulation layer and joined to the electrode and a redistribution portion continuously extending from the back surface to the side surface, wherein
the redistribution portion includes a first portion extending along the side surface, and at least a part of a top surface of the first portion is in contact with the encapsulation resin at a boundary between the encapsulation resin and the insulation layer,
the insulation layer is formed from a material including a thermosetting synthetic resin and an additive including a metallic element forming a part of the embedded portion and a part of the redistribution portion, and
the wire forming step includes:
forming a hole that exposes the electrode in the insulation layer and a groove that is recessed from the back surface and the side surface of the insulation layer and continuous with the hole using a laser while recognizing a position of the electrode from an image, thereby precipitating a base layer that covers a wall surface defining the hole and the groove, and
a plating layer forming step of forming a plating layer covering the base layer.
10 . The method according to claim 9 , wherein in the plating layer forming step, the plating layer is formed through electroless plating.
11 . A method for manufacturing a semiconductor device, the method comprising:
an element embedding step of embedding a semiconductor element in an encapsulation resin so that an electrode disposed on a side of the semiconductor element in a thickness-wise direction is exposed from a resin back surface;
an insulation layer forming step of forming an insulation layer including a main surface and a back surface facing in opposite directions, the main surface covering the resin back surface of the encapsulation resin and the electrode;
a side surface forming step of forming a side surface in the insulation layer that intersects the back surface;
a wire forming step of forming an embedded portion embedded in the insulation layer and joined to the electrode and a redistribution portion formed from the back surface to the side surface, wherein
in the element embedding step, semiconductor elements are embedded in the encapsulation resin,
in the insulation layer forming step, the insulation layer is formed to cover the semiconductor elements, and
in the side surface forming step, after the insulation layer forming step, before the wire forming step, a portion of the insulation layer located between adjacent ones of the semiconductor elements is cut in the thickness-wise direction, and a portion of the encapsulation resin located between adjacent ones of the semiconductor elements is partially cut and removed in the thickness-wise direction to form a separation slit; and
a cutting step of cutting the portion of the encapsulation resin located between adjacent ones of the semiconductor elements to form semiconductor devices after the wire forming step.
12 . The method according to claim 11 , wherein
in the side surface forming step, the separation slit forms a first resin side surface of a first resin portion that is a portion located toward the insulation layer in the thickness-wise direction, and
in the cutting step, the encapsulation resin is cut from a bottom surface of the separation slit in the thickness-wise direction so that a step where the first resin portion is recessed is formed in the encapsulation resin and so that a second resin side surface of a second resin portion is formed, wherein the first resin portion and the second resin portion are located at opposite sides of the step in the thickness-wise direction.
13 . The method according to claim 12 , wherein
the redistribution portion includes a side redistribution portion formed on the side surface of the insulation layer, and
the side redistribution portion is located inward from the second resin side surface of the second resin portion.