IP Library Granted Patent US 12696791
Granted Patent B2
US 12696791 · App. 17/667,843 · Granted Jul 28, 2026

Sensor package with cavity created using sacrificial material

Inventors: Daiki Komatsu (Beppu, JP); Makoto Shibuya (Tokyo, JP)
Assignee: TEXAS INSTRUMENTS INCORPORATED
H10W74/124H10W70/04H10W70/435H10W74/016H10W90/756
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Quick Facts
Patent No.
US 12696791
App. No.
17/667,843
Granted
Jul 28, 2026
Kind
B2
Abstract

An integrated circuit package includes a semiconductor die having a first surface and a second surface. The first surface is attached to a top surface of a die attach pad, and the second surface has a sensing area thereon. A mold compound covers or encapsulates at least a portion of the die attach pad and the semiconductor die. A channel is formed in a top portion of the mold compound. The channel extends from a first side of the mold compound to a second side of the mold compound. A cavity is formed between the channel and the sensing area so that the sensing area is exposed to the environment.

Claims (38)

1 . An integrated circuit package, comprising:

a die attach pad (DAP) having a top surface;

a semiconductor die having a first surface and a second surface, the first surface attached to the top surface of the DAP, the second surface having a sensing area thereon;

a mold compound covering at least a portion of the DAP and the semiconductor die;

a channel formed in a top portion of the mold compound, the channel including at least two side walls extending from a first side of the mold compound to a second side of the mold compound, the first side and the second side along a periphery of the package, the at least two side walls exposed to an environment exterior to the integrated circuit package; and

a cavity formed between the channel and the sensing area so that the sensing area is exposed to the environment.

2 . The integrated circuit package of claim 1 , wherein the cavity is formed within the mold compound.

3 . The integrated circuit package of claim 1 , wherein the cavity is formed by dissolving a sacrificial material after the channel has been created by sawing the mold compound.

4 . The integrated circuit package of claim 3 , wherein a size of the cavity is determined by a method used to apply the sacrificial material.

5 . The integrated circuit package of claim 1 , further comprising:

one or more bond pads on the second surface of the semiconductor die; and

the one or more bond pads each electrically coupled to a lead segment by a bonding wire.

6 . The integrated circuit package of claim 1 , wherein the sensing area is a gas sensor.

7 . The integrated circuit package of claim 1 , wherein the sensing area is a humidity sensor.

8 . The integrated circuit package of claim 1 , wherein the channel has a first depth in the top portion of the mold compound, and wherein the cavity has a second depth between the channel and the sensing area.

9 . A sensor package, comprising:

a sensor attach area on a lead frame;

a sensor device having a first surface and a second surface, the first surface attached to the sensor attach area, the second surface having a sensing area thereon;

a mold compound covering at least a portion of the lead frame and the sensor device;

a channel formed in a top portion of the mold compound, the channel including at least two side walls extending across a width of the mold compound, the at least two side walls extend between two opposite side surfaces along a periphery of the package, the at least two side walls exposed to an environment exterior to the sensor package; and

a cavity formed between the channel and the sensing area so that the sensing area is exposed to the environment.

10 . The sensor package of claim 9 , wherein the cavity is formed within the mold compound.

11 . The sensor package of claim 9 , wherein the cavity is formed by dissolving a sacrificial material after the channel has been created by sawing the mold compound.

12 . The sensor package of claim 9 , wherein an application method for the sacrificial material determines a size of the cavity.

13 . The sensor package of claim 9 , further comprising:

one or more bond pads on the second surface of the sensor device; and

the one or more bond pads each electrically coupled to a lead segment by a bonding wire.

14 . The sensor package of claim 9 , wherein the sensing area is a gas sensor.

15 . The sensor package of claim 9 , wherein the sensing area is a humidity sensor.

16 . The sensor package of claim 9 , wherein the channel has a different cross-sectional shape than that of the cavity.

17 . An integrated circuit (IC) package, comprising:

a semiconductor die including a sensor attached to a die attach pad (DAP) and electrically connected to a lead of the IC package;

a mold compound covering at least a portion of the DAP, the lead, and the semiconductor die;

a first cavity extending from a plane along a top surface of the mold compound, the first cavity extending between a plane along a first side surface of the mold compound and a plane along a second side surface of the mold compound, the first side surface and the second side surface along a periphery of the package, the first cavity exposed to an exterior environment of the IC package; and

a second cavity between the first cavity and the semiconductor die, the second cavity exposed to the environment.

18 . The sensor package of claim 17 , wherein the semiconductor die is electrically connected to the lead via a bonding wire.

19 . The sensor package of claim 17 , wherein the first cavity has a cross-sectional shape different than that of the second cavity.

20 . The sensor package of claim 17 , wherein the sensor is one of a gas sensor and a humidity sensor.