Semiconductor device, power converter, and moving vehicle
The present disclosure has been conceived to solve such a problem, and it is an object of the present disclosure to provide a semiconductor device enabling reduction in cost. A semiconductor device according to the present disclosure includes: a base plate; an insulating substrate disposed over the base plate; a semiconductor chip disposed over the insulating substrate; a first resin case and a second resin case attached to the base plate to enclose the insulating substrate and the semiconductor chip, and fitted together; and a sealing material to seal the insulating substrate and the semiconductor chip, wherein the first resin case and the second resin case are formed of resin materials having different comparative tracking indices.
1 . A semiconductor device comprising:
a base plate;
an insulating substrate disposed over the base plate;
a semiconductor chip disposed over the insulating substrate;
a first resin case and a second resin case attached to the base plate to enclose the insulating substrate and the semiconductor chip, and fitted together; and
a sealing material to seal the insulating substrate and the semiconductor chip, wherein
the first resin case and the second resin case are formed of resin materials having different comparative tracking indices,
an entirety of the first resin case is spaced from the base plate by way of the second resin case, and
the first resin case and the second resin case are fitted by a recess and protrusion structure such that the first resin case includes a first protrusion that protrudes in a vertical direction such that the first protrusion overlaps a first recess in the second resin case in the vertical direction.
2 . The semiconductor device according to claim 1 , wherein
the sealing material fills at least a portion of the recess and protrusion structure.
3 . The semiconductor device according to claim 1 , further comprising
an electrode terminal disposed over the insulating substrate, wherein
the electrode terminal is secured to one of the first resin case and the second resin case, and
a creepage distance and clearance required for surface insulation of at least one of the first resin case and the second resin case are satisfied only by the one of the first resin case and the second resin case to which the electrode terminal is secured.
4 . The semiconductor device according to claim 3 , wherein
the one of the first resin case and the second resin case to which the electrode terminal is secured includes a predetermined first part including a position where the electrode terminal is secured and a second part other than the first part, and
the first part and the second part are formed of different resin materials.
5 . The semiconductor device according to claim 3 , wherein
the electrode terminal is secured to the one of the first resin case and the second resin case by insert molding.
6 . The semiconductor device according to claim 3 , wherein
the insulating substrate and the electrode terminal are ultrasonically bonded.
7 . The semiconductor device according to claim 1 , wherein
the first resin case and the second resin case are secured with an insulating adhesive.
8 . The semiconductor device according to claim 1 , wherein
the first resin case and the second resin case are formed of resin materials having a glass transition temperature of 100° C. or more.
9 . The semiconductor device according to claim 8 , further comprising
an electrode terminal disposed over the insulating substrate, wherein
the insulating substrate and the electrode terminal are ultrasonically bonded.
10 . The semiconductor device according to claim 1 , wherein
the first resin case and the second resin case are fitted in a snap-fit.
11 . The semiconductor device according to claim 1 , wherein
the first resin case and the second resin case are formed by two-color molding.
12 . The semiconductor device according to claim 1 , wherein
the semiconductor chip is formed of a wide bandgap semiconductor.
13 . The semiconductor device according to claim 1 , wherein
the first resin case has a higher comparative tracking index than that of the second resin case.
14 . The semiconductor device according to claim 1 , wherein
the sealing material fills at least a portion of the recess and protrusion structure directly between the first protrusion and the first recess.
15 . The semiconductor device according to claim 1 , wherein
the second resin case includes a second protrusion that protrudes in the vertical direction such that the second protrusion overlaps a second recess in the first resin case in the vertical direction.
16 . A power converter comprising:
a main conversion circuit to convert input power for output, the main conversion circuit including the semiconductor device according to claim 1 ;
a drive circuit to output, to the semiconductor device, a drive signal to drive the semiconductor device; and
a control circuit to output, to the drive circuit, a control signal to control the drive circuit.
17 . A moving vehicle comprising the power converter according to claim 16 .