IP Library › Granted Patent US 12696812
Granted Patent B2
US 12696812 · App. 18/352,759 · Granted Jul 28, 2026

Semiconductor device

Inventors: Tomohira Kikuchi (Kyoto, JP); Hiroaki Matsubara (Kyoto, JP); Yoshizo Osumi (Kyoto, JP); Moe Yamaguchi (Kyoto, JP); Ryohei Umeno (Kyoto, JP)
Assignee: Rohm Co., Ltd.
H10W90/00H10W70/429H10W74/114H10W90/811H10W70/417H10W72/352H10W72/884H10W90/736H10W90/753H10W90/756H10W90/759
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Quick Facts
Patent No.
US 12696812
App. No.
18/352,759
Granted
Jul 28, 2026
Kind
B2
Abstract

A semiconductor device includes a semiconductor control element, a first drive element, a second drive element and a first insulating element. The first drive element is spaced apart from the semiconductor control element in a first direction orthogonal to a thickness direction of the semiconductor control element and receives a signal transmitted from the semiconductor control element. The second drive element is spaced apart from the first drive element in a second direction orthogonal to the thickness direction and the first direction and receives a signal transmitted from the semiconductor control element. The first insulating element is located between the semiconductor control element and the first drive element in the first direction. The first insulating element relays a signal transmitted from the semiconductor control element to the first drive element and provides electrical insulation between the semiconductor control element and the first drive element.

Claims (39)

1 . A semiconductor device comprising:

a semiconductor control element;

a first drive element spaced apart from the semiconductor control element in a first direction orthogonal to a thickness direction of the semiconductor control element, the first drive element receiving a signal transmitted from the semiconductor control element;

a second drive element located on a same side as the first drive element in the first direction with respect to the semiconductor control element and on a first side in a second direction orthogonal to the thickness direction and the first direction with respect to the first drive element, the second drive element receiving a signal transmitted from the semiconductor control element;

a first insulating element located between the semiconductor control element and the first drive element in the first direction, the first insulating element relaying a signal transmitted from the semiconductor control element to the first drive element and providing electrical insulation between the semiconductor control element and the first drive element;

a second insulating element located between the semiconductor control element and the second drive element in the first direction, the second insulating element relaying a signal transmitted from the semiconductor control element to the second drive element and providing electrical insulation between the semiconductor control element and the second drive element;

a sealing resin covering the semiconductor control element; and

an electroconductive support member including a first die pad on which the semiconductor control element, the first insulating element and the second insulating element are mounted, a second die pad on which the first drive element is mounted, and a third die pad on which the second drive element is mounted.

2 . The semiconductor device according to claim 1 , wherein the electroconductive support member includes a plurality of input-side terminals arranged side by side in the second direction, and at least one of the plurality of input-side terminals is electrically connected to the semiconductor control element.

3 . The semiconductor device according to claim 2 , wherein the plurality of input-side terminals includes an input-side first support terminal and an input-side second support terminal each connected to the first die pad, and

the input-side first support terminal and the input-side second support terminal are most distant from each other in the second direction among the plurality of input-side terminals.

4 . The semiconductor device according to claim 2 , wherein the electroconductive support member includes:

a plurality of first output-side terminals arranged side by side in the second direction, at least one of the plurality of first output-side terminals being electrically connected to the first drive element; and

a plurality of second output-side terminals arranged side by side in the second direction, at least one of the plurality of second output-side terminals being electrically connected to the second drive element.

5 . The semiconductor device according to claim 4 , wherein the plurality of first output-side terminals includes a single first output-side support terminal connected to the second die pad, and

the plurality of second output-side terminals includes a single second output-side support terminal connected to the third die pad.

6 . The semiconductor device according to claim 5 , wherein the first output-side support terminal is located closest to the plurality of second output-side terminals among the plurality of first output-side terminals, and

the second output-side support terminal is located closest to the plurality of first output-side terminals among the plurality of second output-side terminals.

7 . The semiconductor device according to claim 5 , wherein the first output-side support terminal is located farthest from the plurality of second output-side terminals among the plurality of first output-side terminals, and

the second output-side support terminal is located farthest from the plurality of first output-side terminals among the plurality of second output-side terminals.

8 . The semiconductor device according to claim 4 , wherein the plurality of first output-side terminals include a first output-side innermost terminal located closest to the plurality of second output-side terminals,

the plurality of second output-side terminals include a second output-side innermost terminal located closest to the plurality of first output-side terminals, and

the first output-side innermost terminal and the second output-side innermost terminal include portions exposed from the sealing resin that are spaced apart from each other by a first inter-terminal distance, and two adjacent first output-side terminals that are most distant from each other among the plurality of first output-side terminals include portions exposed from the sealing resin that are spaced apart from each other by a second inter-terminal distance, the first inter-terminal distance being at least three times greater than the second inter-terminal distance.

9 . The semiconductor device according to claim 8 , wherein the first inter-terminal distance is at least nine times greater than the second inter-terminal distance.

10 . The semiconductor device according to claim 8 , wherein the sealing resin includes a first side surface on a same side as the first drive element in the first direction with respect to the semiconductor control element, and

the electroconductive support member is not exposed in a region of the first side surface between the first output-side innermost terminal and the second output-side innermost terminal.

11 . The semiconductor device according to claim 10 , wherein the sealing resin includes a first groove recessed from the first side surface in the first direction and extending in the thickness direction.

12 . The semiconductor device according to claim 1 , wherein the sealing resin includes a second side surface on a second side opposite the first side in the second direction, and the electroconductive support member is not exposed on the second side surface.

13 . The semiconductor device according to claim 12 , wherein the sealing resin further includes a second groove recessed from the second side surface in the second direction and extending in the thickness direction.

14 . The semiconductor device according to claim 1 , wherein the first insulating element and the second insulating element are of an inductive-coupling type or of a capacitive type.

15 . A semiconductor device comprising:

a semiconductor control element;

a first drive element spaced apart from the semiconductor control element in a first direction orthogonal to a thickness direction of the semiconductor control element, the first drive element receiving a signal transmitted from the semiconductor control element;

a second drive element located on a same side as the first drive element in the first direction with respect to the semiconductor control element and on a first side in a second direction orthogonal to the thickness direction and the first direction with respect to the first drive element, the second drive element receiving a signal transmitted from the semiconductor control element;

a first insulating element located between the semiconductor control element and the first drive element in the first direction, the first insulating element relaying a signal transmitted from the semiconductor control element to the first drive element and providing electrical insulation between the semiconductor control element and the first drive element;

a sealing resin covering the semiconductor control element; and

an electroconductive support member including a first die pad on which the semiconductor control element is mounted, a second die pad on which the first drive element is mounted, and a third die pad on which the second drive element is mounted,

wherein the first insulating element further relays a signal transmitted from the semiconductor control element to the second drive element and provides electrical insulation between the semiconductor control element and the second drive element.

16 . The semiconductor device according to claim 15 , wherein the first insulating element is mounted on the first die pad.