Semiconductor equipment

1 . A semiconductor device comprising:

a first die pad including a first obverse surface facing in a thickness direction;

a second die pad spaced apart from the first die pad in a first direction orthogonal to the thickness direction and including a second obverse surface facing in the thickness direction;

a first semiconductor element mounted on the first obverse surface, the first semiconductor element being smaller in area than the first obverse surface as viewed in the thickness direction;

a second semiconductor element mounted on the second obverse surface, the second semiconductor element being smaller in area than the second obverse surface as viewed in the thickness direction;

an insulating element mounted on the first obverse surface or the second obverse surface and located between the first semiconductor element and the second semiconductor element in the first direction, the insulating element being configured to provide electrical insulation between the first semiconductor element and the second semiconductor element while relaying a signal between the first semiconductor element and the second semiconductor element;

a first wire having a first end and a second end opposite to the first end, the first wire being bonded to the first semiconductor element at the first end and to the first obverse surface at the second end; and

a sealing resin covering the first semiconductor element, the second semiconductor element and the insulating element,

wherein the first die pad includes:

a first bond portion located to be offset to a first side of a second direction orthogonal to the thickness direction and the first direction with respect to the first semiconductor element, the second end of the first wire being bonded to the first bond portion; and

a first opening located between the first bond portion and the first semiconductor element in the second direction and including an opening end in the first obverse surface.

2 . The semiconductor device according to claim 1 , wherein the second semiconductor element is a control element, and

the first semiconductor element is a drive element that receives a signal from the control element via the insulating element and generates and outputs a drive signal.

3 . The semiconductor device according to claim 1 , further comprising:

a plurality of terminals which are arranged along the second direction and at least one of which is electrically connected to the first semiconductor element; and

a pair of connecting portions, wherein

the plurality of terminals include a pair of outer terminals located at opposite ends in the second direction, and

each of the pair of connecting portions is connected to one of the pair of outer terminals and the first die pad.

4 . The semiconductor device according to claim 3 , wherein each of the pair of connecting portions includes:

a first coupling section and a second coupling section that are connected to the first die pad; and

a joint section connected to one of the pair of outer terminals, the first coupling section, and the second coupling section,

the first coupling section extends in the second direction from the first die pad to the joint section,

the second coupling section includes a first part and a second part, the first part extending in the second direction from the first die pad, the second part being connected to the first part and the joint section and extending in a direction inclined with respect to the second direction, and

the joint section includes a through-hole penetrating in the thickness direction.

5 . The semiconductor device according to claim 1 , wherein the first opening extends in the first direction.

6 . The semiconductor device according to claim 1 , wherein the first opening overlaps with an entirety of the first semiconductor element as viewed in the second direction.

7 . The semiconductor device according to claim 1 , wherein opposite ends of the first opening in the first direction are located inward from an outer edge of the first obverse surface as viewed in the thickness direction.

8 . The semiconductor device according to claim 1 , wherein the first opening has a dimension of not less than 100 μm and not more than 250 μm in the second direction.

9 . The semiconductor device according to claim 1 , wherein, in the second direction, a first distance between the first opening and the first semiconductor element is greater than a second distance between the first opening and the first bond portion.

10 . The semiconductor device according to claim 1 , wherein the first opening is a groove recessed from the first obverse surface in the thickness direction.

11 . The semiconductor device according to claim 1 , wherein the first opening penetrates the first die pad in the thickness direction.

12 . The semiconductor device according to claim 1 , further comprising a second wire bonded to the first semiconductor element and the first obverse surface,

wherein the first die pad includes:

a second bond portion which is located to be offset to a second side of the second direction with respect to the first semiconductor element, the second wire having an end bonded to the second bond portion; and

a second opening located between the second bond portion and the first semiconductor element in the second direction and including an opening end in the first obverse surface.

13 . The semiconductor device according to claim 1 , further comprising a third wire bonded to the second semiconductor element and the second obverse surface,

wherein the second die pad includes:

a third bond portion which is located to be offset to the first side of the second direction with respect to the second semiconductor element, the third wire having an end bonded to the third bond portion; and

a third opening located between the third bond portion and the second semiconductor element in the second direction and including an opening end in the second obverse surface.

14 . The semiconductor device according to claim 13 , wherein the third opening extends in the first direction.

15 . The semiconductor device according to claim 13 , wherein the third opening overlaps with an entirety of the second semiconductor element as viewed in the second direction.

16 . The semiconductor device according to claim 13 , wherein opposite ends of the third opening in the first direction are located inward from an outer edge of the second obverse surface as viewed in the thickness direction.

17 . The semiconductor device according to claim 13 , further comprising a fourth wire bonded to the second semiconductor element and the second obverse surface,

wherein the second die pad includes:

a fourth bond portion which is located to be offset to the second side of the second direction with respect to the second semiconductor element, the fourth wire having an end bonded to the fourth bond portion; and

a fourth opening located between the fourth bond portion and the second semiconductor element in the second direction and including an opening end in the second obverse surface.

18 . The semiconductor device according to claim 1 , further comprising a bonding layer interposed between the first die pad and the first semiconductor element, wherein the bonding layer is Ag paste.

19 . The semiconductor device according to claim 1 , wherein the insulating element is mounted on the first obverse surface.

20 . The semiconductor device according to claim 1 , wherein the first opening is an elongated linear slit as viewed in the thickness direction.