Semiconductor apparatus
According to the present disclosure, a semiconductor apparatus comprises a plurality of integrated circuits, an IC frame on which the plurality of integrated circuits are mounted, and a sealing material. The IC frame comprises a first protrusion extending in a longitudinal direction of the IC frame, a second protrusion positioned on the opposite side to the first protrusion in the IC frame and extending in an opposite direction to the first protrusion, and a third protrusion extending in a direction perpendicular to the longitudinal direction of the IC frame and incorporated in the sealing material.
1 . A semiconductor apparatus comprising:
a plurality of integrated circuits comprising a low voltage integrated circuit (LVIC) and a high voltage integrated circuit (HVIC), an IC frame on which the plurality of integrated circuits are mounted,
a low side frame and a low voltage wiring electrically connecting the L VIC to the low side frame,
a high side frame and a high voltage wiring electrically connecting the HVIC to the high side frame, wherein:
the IC frame comprises:
a first protrusion extending in a longitudinal direction of the IC frame,
a second protrusion positioned on an opposite side to the first protrusion in the IC frame and extending in an opposite direction to the first protrusion, and
a third protrusion extending in a direction perpendicular to the longitudinal direction of the IC frame and incorporated in a sealing material, and extending away from a first edge of the IC frame that is opposite to a second edge of the IC frame that is proximate to the low side frame and the high side frame.
2 . The semiconductor apparatus according to claim 1 , wherein
the plurality of integrated circuits comprise two integrated circuits, and
the third protrusion exists at a position that is equidistant from the two integrated circuits.
3 . The semiconductor apparatus according to claim 1 , wherein
the plurality of integrated circuits comprise two integrated circuits, and
the IC frame has a plating section between the two integrated circuits.
4 . The semiconductor apparatus according to claim 1 , further comprising
a group of semiconductor devices positioned on the opposite side to the third protrusion in the IC frame and arranged in parallel in the longitudinal direction of the IC frame,
wherein the group of semiconductor devices include a plurality of types of semiconductor devices.
5 . The semiconductor apparatus according to claim 1 , wherein the plurality of integrated circuits are connected to one another by a wiring.
6 . The semiconductor apparatus according to claim 4 , wherein a semiconductor constituting the group of semiconductor devices is formed of a wide bandgap semiconductor.
7 . The semiconductor apparatus according to claim 6 , wherein the wide bandgap semiconductor is silicon carbide, a gallium nitride-based material, or diamond.