Method for fabricating trihalodisilane and method for fabricating semiconductor device using the same
A method for fabricating trihalodisilane, the method includes providing a halodisilane including at least four halogen atoms; reducing the halodisilane, using a mixed reducing agent including a first reducing agent represented by following Chemical Formula 1-1, in which R A is an alkyl group, and m and n are each independently 1 or 2, and m+n=3, and a second reducing agent represented by following Chemical Formula 2-1, in which R S is an alkyl group or an aryl group, p and q are each independently 1, 2, or 3, and p+q=4; and obtaining a product including a 1,1,1-trihalodisilane,
1 . A method for fabricating trihalodisilane, the method comprising:
providing a halodisilane including at least four halogen atoms;
reducing the halodisilane, using a mixed reducing agent including a first reducing agent represented by following Chemical Formula 1-1 and a second reducing agent represented by following Chemical Formula 2-1, wherein the reducing does not include the use of a solvent other than the first reducing agent and the second reducing agent; and
obtaining a product including a 1,1,1-trihalodisilane,
wherein, in Chemical Formula 1-1,
R A is an alkyl group, and
m and n are each independently 1 or 2, and m+n=3,
wherein, in Chemical Formula 2-1,
R S is an alkyl group or an aryl group,
p and q are each independently 1, 2, or 3, and p+q=4.
2 . The method for fabricating trihalodisilane as claimed in claim 1 , wherein, in Chemical Formula 1-1, m is 2 and n is 1.
3 . The method for fabricating trihalodisilane as claimed in claim 2 , wherein the first reducing agent includes diisobutylaluminum hydride.
4 . The method for fabricating trihalodisilane as claimed in claim 1 , wherein, in Chemical Formula 2-1, p is 3 and q is 1.
5 . The method for fabricating trihalodisilane as claimed in claim 4 , wherein the second reducing agent includes tri-n-butyltin hydride or triphenyltin hydride.
6 . The method for fabricating trihalodisilane as claimed in claim 1 , wherein the product further includes a pentahalodisilane.
7 . The method for fabricating trihalodisilane as claimed in claim 1 , wherein a molar ratio of the first reducing agent to the second reducing agent is 9:1 to 1:9.
8 . The method for fabricating trihalodisilane as claimed in claim 7 , wherein the molar ratio of the first reducing agent to the second reducing agent is 9:1 to 5:5.
9 . A method for fabricating trihalodisilane, the method comprising:
providing a halodisilane including at least four halogen atoms;
cooling the halodisilane to a first temperature that is higher than a freezing point of the halodisilane and lower than 15° C.;
mixing the cooled halodisilane with a mixed reducing agent including an aluminum reducing agent and a tin reducing agent to generate a mixture;
stirring the mixture at a second temperature that is higher than the first temperature; and
separating a 1,1,1-trihalodisilane from the mixture,
wherein the method does not include the use of a solvent other than the aluminum reducing agent and the tin reducing agent.
10 . The method for fabricating trihalodisilane as claimed in claim 9 , wherein:
a halogen atom of the at least four halogen atoms includes a chlorine atom, and
the 1,1,1-trihalodisilane includes 1,1,1-trichlorodisilane.
11 . The method for fabricating trihalodisilane as claimed in claim 9 , wherein:
the aluminum reducing agent is represented by following Chemical Formula 1-1,
the tin reducing agent includes tri-n-butyltin hydride or triphenyltin hydride,
in Chemical Formula 1-1,
R A is an alkyl group, and
m and n are each independently 1 or 2, and m+n=3.
12 . The method for fabricating trihalodisilane as claimed in claim 9 , wherein the first temperature is 10° C. or lower.
13 . The method for fabricating trihalodisilane as claimed in claim 9 , wherein the second temperature is 15° C. to 25° C.
14 . The method for fabricating trihalodisilane as claimed in claim 9 , further comprising cooling the mixture to a third temperature prior to stirring the mixture at the second temperature, the third temperature being lower than the first temperature.
15 . The method for fabricating trihalodisilane as claimed in claim 14 , wherein the third temperature is 0° C. or lower.
16 . The method for fabricating trihalodisilane as claimed in claim 9 , wherein separating the 1,1,1-trihalodisilane from the mixture includes:
cooling the mixture to a third temperature that is lower than the first temperature to obtain a solid crude product, and
separating the 1,1,1-trihalodisilane from the solid crude product.
17 . The method for fabricating trihalodisilane as claimed in claim 16 , wherein the third temperature is −70° C. or lower.
18 . The method for fabricating trihalodisilane as claimed in claim 16 , wherein separating the 1,1,1-trihalodisilane from the solid crude product includes performing a reduced pressure fractional distillation.
19 . A method for fabricating a semiconductor device, the method comprising:
providing a substrate; and
forming a silicon-containing layer on the substrate by providing a silicon precursor including a 1,1,1-trihalodisilane,
wherein providing the silicon precursor includes:
providing a halodisilane including at least four halogen atoms, and
reducing the halodisilane using a mixed reducing agent including an aluminum reducing agent and a tin reducing agent,
wherein reducing the halodisilane does not include the use of a solvent other than the aluminum reducing agent and the tin reducing agent.
20 . The method for fabricating the semiconductor device as claimed in claim 19 , wherein:
the aluminum reducing agent is represented by following Chemical Formula 1-1,
the tin reducing agent includes tri-n-butyltin hydride or triphenyltin hydride,
in Chemical Formula 1-1,
R A is an alkyl group, and
m and n are each independently 1 or 2, and m+n=3.