IP Library Granted Patent US 12698406
Granted Patent B2
US 12698406 · App. 18/319,755 · Granted Aug 4, 2026

Compositions and methods for deposition of ultrathin nanoparticle films

Inventors: Binil Itty Ipe Kandapallil (Long Beach, CA); Siji Thomas (Long Beach, CA); Juliana Sanoe Tampus (Tustin, CA); Phillip Charles Reid (Santa Ana, CA); Timothy R. Kilgore (Orange, CA); John Gerhard Keller (Rancho Palos Verdes, CA)
Assignee: The Boeing Company
C09D5/22C09D1/00C09D7/67C09D7/68C09D11/037C09D11/50C09D11/54
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Quick Facts
Patent No.
US 12698406
App. No.
18/319,755
Granted
Aug 4, 2026
Kind
B2
Abstract

Compositions for deposition of ultrathin layers of nanoparticle films are provided. Ultrathin nanoparticle films and methods for deposition thereof involving applying the nanoparticle-metal alkoxide solution to a substrate, such that a formed metal oxide is anchored on a surface of the substrate to form an ultrathin nanoparticle film are also provided.

Claims (24)

1 . A composition comprising nanoparticles dispersed in a metal alkoxide solution, wherein the metal alkoxide solution comprises a transition metal alkoxide precursor and an anhydrous solvent, wherein the transition metal alkoxide precursor is in a predetermined amount to anchor a formed metal oxide on a surface of a substrate and to form a nanoparticle film, wherein the predetermined amount of the transition metal alkoxide precursor is between 5% and 90% by volume.

2 . The composition according to claim 1 , wherein the nanoparticles have a size within a range of 1-500 nm.

3 . The composition according to claim 1 , wherein the nanoparticles are metal nanoparticles, metal oxide nanoparticles, carbon nanoparticles, or semiconductor nanoparticles.

4 . The composition according to claim 1 , wherein the nanoparticles include anisotropic nanomaterials.

5 . The composition according to claim 1 , wherein the nanoparticles are quantum dots.

6 . The composition according to claim 1 , wherein the transition metal alkoxide precursor comprises a transition metal selected from the group consisting of Co, Ga, Ge, Hf, Fe, Ni, Nb, Mo, La, Re, Sc, Si, Ti, Ta, V, W, Y, Zr, and Sc.

7 . The composition according to claim 1 , wherein the transition metal alkoxide precursor comprises titanium butoxide, titanium tert-butoxide, titanium isopropoxide, titanium ethoxide, titanium methoxide, zirconium ethoxide, zirconium butoxide, zirconium tert-butoxide, zirconium propoxide, vanadium oxytriethoxide, vanadium oxytripropoxide, vanadium oxytriisopropoxide, vanadium tert-butoxide, tantalum ethoxide, or tantalum butoxide.

8 . The composition according to claim 1 , wherein the transition metal alkoxide precursor is titanium butoxide, titanium ethoxide, or zirconium butoxide.

9 . The composition according to claim 1 , wherein the anhydrous solvent is an amount from 10-95% by weight.

10 . A method for forming a nanoparticle film, said method comprising:

preparing a metal alkoxide solution comprising a predetermined amount of a transition metal alkoxide precursor in a solvent,

wherein the predetermined amount of the transition metal alkoxide precursor is between 5% and 90% by volume;

mixing pre-dried nanoparticles with the metal alkoxide solution to obtain a nanoparticle-metal alkoxide solution; and

applying the nanoparticle-metal alkoxide solution to a substrate, such that a formed metal oxide is anchored on a surface of the substrate, thereby forming a nanoparticle film.

11 . The method according to claim 10 , wherein the nanoparticles have a size in a range of 1-500 nm.

12 . The method according to claim 10 , wherein the nanoparticles are metal nanoparticles, metal oxide nanoparticles, carbon nanoparticles, or semiconductor nanoparticles.

13 . The method according to claim 10 , wherein the nanoparticles include anisotropic nanomaterials.

14 . The method according to claim 10 , wherein the nanoparticles are quantum dots.

15 . The method according to claim 10 , wherein the transition metal alkoxide precursor comprises a transition metal selected from the group consisting of Co, Ga, Ge, Hf, Fe, Ni, Nb, Mo, La, Re, Sc, Si, Ti, Ta, V, W, Y, Zr, and Sc.

16 . The method according to claim 10 , wherein the transition metal alkoxide precursor comprises titanium butoxide, titanium tert-butoxide, titanium isopropoxide, titanium ethoxide, titanium methoxide, zirconium ethoxide, zirconium butoxide, zirconium tert-butoxide, zirconium propoxide, vanadium oxytriethoxide, vanadium oxytripropoxide, vanadium oxytriisopropoxide, vanadium tert-butoxide, tantalum ethoxide, or tantalum butoxide.

17 . The method according to claim 10 , wherein the transition metal alkoxide precursor is titanium butoxide, titanium ethoxide, or zirconium butoxide.

18 . The method according to claim 10 , wherein the substrate is metal, metal oxide, composite, or glass.

19 . The composition according to claim 1 , wherein the formed metal oxide is anchored to the surface of the substrate by a hydroxyl group on the surface of the substrate by reacting with the metal alkoxide solution to form a covalent bond between the metal alkoxide solution and the surface.

20 . The method according to claim 10 , wherein the formed metal oxide is anchored to the surface of the substrate by a hydroxyl group on the surface of the substrate by reacting with the metal alkoxide solution to form a covalent bond between the metal alkoxide solution and the surface.