Highly reflective metallic alloys for components of semiconductor processing equipment, and related methods
Embodiments described herein generally relate to highly reflective metallic alloys for components (such as chamber components) of semiconductor processing equipment, and related methods and processing chambers. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes a chamber body having an internal volume, and one or more heat sources configured to provide heat to the internal volume. The processing chamber includes an upper window and a lower window. The processing chamber includes one or more chamber components positioned to reflect energy emitted from the one or more heat sources through at least one of the upper window or the lower window and into the internal volume, the one or more chamber components comprising a metallic alloy and one or more reflective surfaces having a surface roughness (Ra) that is 5.0 nanometer or less.
1 . A processing chamber applicable for use in semiconductor manufacturing, comprising:
a chamber body having an internal volume;
one or more heat sources configured to provide heat to the internal volume;
a substrate support disposed in the internal volume, the substrate support comprising a support surface;
an upper window disposed over the substrate support;
a lower window disposed below the substrate support;
one or more chamber components positioned to reflect energy emitted from the one or more heat sources through at least one of the upper window or the lower window and into the internal volume, the one or more chamber components comprising an aluminum alloy and one or more reflective surfaces having a surface roughness (Ra) that is 5.0 nanometer or less,
wherein:
the aluminum alloy comprises aluminum and one or more transition metals,
the aluminum alloy comprises an alloy composition having at least 80% aluminum atomic percentage and at least 5% transition atomic percentage of the one or more transition metals, and
a sum of the aluminum atomic percentage and the transition atomic percentage is at least 95%.
2 . The processing chamber of claim 1 , wherein a microstructure of the aluminum alloy is fully amorphous, partially crystalline, or fully crystalline.
3 . The processing chamber of claim 1 , wherein the one or more transition metals comprise one or more of iron, nickel, copper, manganese, molybdenum, and zirconium.
4 . The processing chamber of claim 1 , wherein the one or more heat sources are disposed at one or more of: above the upper window or below the lower window.
5 . The processing chamber of claim 1 , wherein the aluminum alloy has a reflectivity of 95 percent or more.
6 . The processing chamber of claim 1 , wherein the one or more chamber components further comprise an infrared (IR) transparent protective coating formed on the one or more reflective surfaces.
7 . The processing chamber of claim 6 , wherein the IR transparent protective coating comprises one or more of a metal oxide layer, a metal fluoride layer, a metal oxyfluoride layer, a stack of layers with different oxides, fluoride, or one or more oxyfluoride compositions.
8 . The processing chamber of claim 6 , wherein the transparent protective coating comprises a single layer, a double layer structure, a multilayer structure having three or more layers, or a laminated layer structure.
9 . A chamber component for use in a semiconductor processing chamber, the chamber component comprising:
a cylindrical body comprising an aluminum alloy and one or more reflective surfaces having a surface roughness (Ra) that is 5.0 nanometer or less,
wherein:
the aluminum alloy comprises aluminum and one or more transition metals,
the aluminum alloy comprises an alloy composition having at least 80% aluminum atomic percentage and at least 5% transition atomic percentage of the one or more transition metals, and
a sum of the aluminum atomic percentage and the transition atomic percentage is at least 95%.
10 . The chamber component of claim 9 , wherein the one or more transition metals comprise one or more of iron, nickel, copper, manganese, molybdenum, and zirconium.
11 . The chamber component of claim 9 , wherein the aluminum alloy has a reflectivity of 95 percent or more.
12 . The chamber component of claim 9 , wherein the cylindrical body further comprises an infrared (IR) transparent protective coating.
13 . A method for substrate processing for use in semiconductor manufacturing, the method comprising:
generating energy from the one or more heat sources disposed in the processing chamber of claim 1 ; and
reflecting the generated energy off the one or more chamber components and through the upper window or the lower window towards the internal volume of the processing chamber.
14 . The method of claim 13 , wherein the one or more transition metals comprise one or more of iron, nickel, copper, manganese, molybdenum, and zirconium.
15 . The method of claim 13 , wherein the aluminum alloy has a reflectivity of 95 percent or more.