Semiconductor processing chamber, semiconductor processing equipment and vapor epitaxy equipment
Disclosed herein are a semiconductor processing chamber, semiconductor processing equipment and vapor epitaxy equipment, solving technical problems of process gas uniformity, infrared radiation transmittance and pressure-bearing capacity in the field of semiconductor processing. Mainly, an upper cover of a processing chamber is covered by a pressure-bearing shell and a confined space is formed, a pressure-regulating device is configured to regulate air pressure of the confined space and further regulate air pressure borne by upper and lower surfaces of the upper cover of the semiconductor processing chamber, the structural design of the upper cover is optimized, such that, in a semiconductor processing process, in order to realize processing with higher uniformity and higher quality on a surface of a substrate, the upper cover can be improved in a larger range to obtain a more optimized processing space.
1 . A semiconductor processing chamber, configured to process a substrate, comprising:
a chamber frame being hollow, provided with a gas inlet and a gas outlet, the gas inlet being configured to introduce process gas, and an opening being arranged at a first side of the chamber frame;
an upper cover capable of permeating heat radiation, the upper cover being in matched connection with the opening and arranged on the chamber frame, the upper cover and the chamber frame enclosing a processing space, and the processing space being configured to accommodate the substrate and process the substrate;
a pressure-bearing shell, arranged above the upper cover and enclosing a confined space with the upper cover and at least part of the chamber frame;
a pressure-regulating device, configured to regulate pressure in the confined space; and further,
a lower cover, arranged on a second side of the chamber frame oppositely to the upper cover, the processing space being enclosed by the upper cover, the lower cover and the chamber frame, and a lower surface of the lower cover being at least partially in an atmospheric environment.
2 . The semiconductor processing chamber of claim 1 , wherein the pressure-bearing shell is hermetically connected to an outer sidewall of the chamber frame by a fastener.
3 . The semiconductor processing chamber of claim 1 , wherein the chamber frame comprises an upper frame and a lower frame, and the opening is arranged in the upper frame.
4 . The semiconductor processing chamber of claim 1 , wherein the upper cover comprises a window located in a central portion of the upper cover and an outer edge surrounding the window.
5 . The semiconductor processing chamber of claim 1 , further comprising an assembly ring made of metal, wherein the upper cover is hermetically mounted on the assembly ring, and the assembly ring is mounted on the opening.
6 . The semiconductor processing chamber of claim 4 , wherein the window is made of transparent quartz and the outer edge is made of opaque or transparent quartz.
7 . The semiconductor processing chamber of claim 4 , wherein the outer edge is hermetically fixed with an edge of the opening by a sealing ring.
8 . The semiconductor processing chamber of claim 1 , wherein the pressure-regulating device comprises a vacuum pump, and the pressure-bearing shell comprises an extraction opening connected to the vacuum pump.
9 . The semiconductor processing chamber of claim 1 , wherein the pressure-regulating device comprises:
a monitoring module, configured to measure an air pressure value of the processing space and/or the confined space; and
a control module, configured to preset a safety air pressure difference and regulate the pressure of the processing space and the pressure of the confined space according to the safety air pressure difference and based on the air pressure value.
10 . The semiconductor processing chamber of claim 1 , wherein the pressure-bearing shell comprises a heat exchange system.
11 . The semiconductor processing chamber of claim 10 , wherein the heat exchange system comprises a helium gas source introduced into the confined space.
12 . The semiconductor processing chamber of claim 1 , wherein the chamber frame and/or the pressure-bearing shell are/is made of metal, and the upper cover is made of quartz.
13 . The semiconductor processing chamber of claim 1 , wherein the pressure-regulating device is configured to regulate the pressure of the confined space to be smaller than 1 standard atmospheric pressure during processing.
14 . The semiconductor processing chamber of claim 1 , wherein the pressure-regulating device is configured to regulate the pressure of the confined space to be smaller than 0.5 standard atmospheric pressure during processing.
15 . The semiconductor processing chamber of claim 1 , further comprising the lower cover, wherein the lower cover is arranged on the second side of the chamber frame oppositely to the upper cover, the processing space is enclosed by the upper cover, the lower cover and the chamber frame, the pressure-regulating device regulates the pressure in the confined space in a process, such that air pressure borne by an outer surface of the upper cover is greater than or equal to that of the processing space and is smaller than that borne by an outer surface of the lower cover.
16 . The semiconductor processing chamber of claim 1 , wherein the confined space is communicated with the atmospheric environment by the pressure-regulating device.
17 . The semiconductor processing chamber of claim 4 , wherein the window has a shape of an upwardly curved dome or a flat plate or a downwardly curved depression.
18 . The semiconductor processing chamber of claim 17 , wherein an annular stiffener is arranged on an upper surface of the window, the annular stiffener divides the window into a center area located in the annular stiffener and an edge area located between the outer edge and the annular stiffener, the annular stiffener is further provided with a plurality of air channels, and the plurality of air channels are configured to communicate a space between the center area and the edge area.
19 . A semiconductor processing chamber, configured to process a substrate, comprising:
a chamber with a confined processing space, the chamber comprising an upper cover capable of permeating heat radiation, and the confined processing space being configured to accommodate the substrate and process the substrate;
a pressure-bearing shell, connected with a partial area of the chamber to form a confined space, at least a partial area of the upper cover being in the confined space;
a pressure-regulating device, configured to regulate pressure of the confined space; and further,
a lower cover arranged oppositely to the upper cover, at least a partial area of the lower cover being in an atmospheric environment.
20 . The semiconductor processing chamber of claim 19 , wherein the confined space is communicated with the atmospheric environment by the pressure-regulating device.
21 . The semiconductor processing chamber of claim 19 , wherein the upper cover is arranged integrally with the chamber or directly or indirectly arranged in an opening arranged in the chamber.
22 . The semiconductor processing chamber of claim 19 , wherein the pressure-regulating device is configured to regulate the pressure in the confined space to be greater than or equal to that in the confined processing space in a process.
23 . The semiconductor processing chamber of claim 22 , wherein the pressure-regulating device is configured to regulate the pressure in the confined space to be smaller than 1 standard atmospheric pressure in the process.
24 . The semiconductor processing chamber of claim 19 , wherein the pressure-bearing shell is connected to an edge of the upper cover.
25 . The semiconductor processing chamber of claim 19 , wherein at least a partial area of the chamber is located outside the confined space.
26 . The semiconductor processing chamber of claim 19 , wherein the pressure-bearing shell is made of metal, and the upper cover is made of quartz.
27 . The semiconductor processing chamber of claim 1 , further comprising:
a base located in the processing space and configured to bear the substrate; and
a heating lamp group located in the confined space and configured to provide the heat radiation for the substrate through the upper cover.
28 . The semiconductor processing chamber of claim 27 , wherein the pressure-regulating device comprises:
a monitoring module, configured to measure an air pressure value of the processing space and/or the confined space; and
a control module, configured to preset an air pressure difference and regulate the pressure of the processing space and the confined space according to the air pressure difference and based on the air pressure value.
29 . The semiconductor processing chamber of claim 27 , wherein a substrate transferring opening is arranged in a side surface of the chamber frame.
30 . Vapor epitaxy equipment, comprising:
a chamber frame being hollow, provided with a gas inlet and a gas outlet and configured to introduce process gas to form a silicon-containing epitaxy layer on a substrate, an opening being arranged on one side of the chamber frame;
an upper cover capable of permeating heat radiation, the upper cover being in matched connection with the opening and arranged on the chamber frame, the upper cover and the chamber frame enclosing a processing space, and the processing space being configured to accommodate the substrate and process the substrate;
a pressure-bearing shell, arranged above the upper cover and enclosing a confined space with the upper cover or enclosing the confined space with the upper cover and at least part of the chamber frame;
a pressure-regulating device, configured to regulate pressure of the confined space, the confined space being communicated with an atmospheric environment by the pressure-regulating device; and
a heating lamp group located in the confined space, the heat radiation emitted by the heating lamp group being capable of permeating the upper cover to heat the substrate.
31 . The vapor epitaxy equipment of claim 30 , wherein the pressure-regulating device is configured to regulate the pressure in the confined space to be smaller than 1 standard atmospheric pressure in a process.
32 . The vapor epitaxy equipment of claim 30 , wherein a window has a shape of an upwardly curved dome or a flat plate or a downwardly curved depression.
33 . The vapor epitaxy equipment of claim 32 , wherein an annular stiffener is arranged on an upper surface of the window, the annular stiffener divides the window into a center area located in the annular stiffener and an edge area located between an outer edge and the annular stiffener, the annular stiffener is further provided with a plurality of air channels, and the plurality of air channels are configured to communicate a space between the center area and the edge area.
34 . The vapor epitaxy equipment of claim 30 , wherein a chamber further comprises a lower cover arranged oppositely to the upper cover, the pressure-regulating device regulates the pressure in the confined space in a process, such that air pressure borne by an outer surface of the upper cover is greater than or equal to that of the processing space and is smaller than that borne by an outer surface of the lower cover.
35 . The vapor epitaxy equipment of claim 30 , wherein the pressure-regulating device comprises:
a monitoring module, configured to measure an air pressure value of the processing space and/or the confined space; and
a control module, configured to preset an air pressure difference and regulate the pressure of the processing space and the pressure of the confined space according to a safety air pressure difference and based on a safety air pressure value.