IP Library Granted Patent US 12699130
Granted Patent B2
US 12699130 · App. 18/746,546 · Granted Aug 4, 2026

Test tray for semiconductor devices and test apparatus using the same

Inventors: Taek Seon Lee (Hwaseong-si, KR); Ho Nam Kim (Seongnam-si, KR); Sung Chul Moon (Gunpo-si, KR); Han Su Bae (Siheung-si, KR); Ju Hyun Kim (Suwon-si, KR)
Assignee: ATECO INC.
G01R31/2893G01R1/0466G01R31/2601G01R31/2863
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Quick Facts
Patent No.
US 12699130
App. No.
18/746,546
Granted
Aug 4, 2026
Kind
B2
Abstract

Disclosed is a test for a semiconductor device, including: a test board that has a preparation surface on which a test tray with the semiconductor device mounted to an insert is prepared, and performs a test on the semiconductor device mounted to the insert; and a pressing unit that is positioned to face the preparation surface and presses the insert of the test tray prepared on the preparation surface toward the test board.

Claims (15)

1 . A test apparatus for a semiconductor device with terminals located on a lateral surface thereof, the test apparatus comprising:

a test board that has a preparation surface on which a test tray with the semiconductor device mounted to an insert is prepared, and performs a test on the semiconductor device mounted to the insert; and

a pressing unit that is positioned to face the preparation surface and presses the insert of the test tray prepared on the preparation surface toward the test board,

the test board comprising:

an insert guide block that supports a bottom of the insert of the test tray in a first direction, the test tray being prepared on the preparation surface; and

a socket that is located on the insert guide block, has a connection surface where an axis of intersecting a pressing direction of the pressing unit passes, and exchanges signals for a test with the semiconductor device as electrically connected to the terminals of the lateral surface of the semiconductor device being in close contact with the connection surface, and supports the lateral surface of the semiconductor device in a second direction intersecting the first direction.

2 . The test apparatus of claim 1 , wherein the insert guide block comprises an insert alignment hole or pin extended in parallel with a direction of pushing the insert to interact with the insert while the insert is being pushed in a direction intersecting the pressing direction and located adjacent to the socket.

3 . The test apparatus of claim 2 , wherein the socket comprises a push alignment hole or pin extending in parallel with a direction of pushing the insert to further align the semiconductor device with the connection surface after the insert is aligned by the insert alignment hole or pin.

4 . The test apparatus of claim 3 , wherein the push alignment hole or pin has a smaller diameter than the insert alignment hole or pin.

5 . The test apparatus of claim 3 , wherein the insert alignment pin protrudes more than the push alignment pin.

6 . The test apparatus of claim 1 , wherein the insert guide block comprises a preparation alignment hole or pin extending in parallel with a direction in which the test tray approaches the preparation surface so that the insert guide block can interact with the insert while the test tray is being prepared on the preparation surface.

7 . The test apparatus of claim 1 , wherein the pressing unit comprises a guide hole or pin extending in parallel with the pressing direction to interact with the insert.

8 . The test apparatus of claim 1 , wherein, based on a direction perpendicular to the connection surface, the thickness of the insert guide block is shorter than the height of the lateral surface of the semiconductor device.

9 . The test apparatus of claim 1 , wherein the first direction is parallel to the pressing direction of the pressing unit, and the second direction is parallel to a pushing direction of the insert.

10 . The test apparatus of claim 1 , wherein the first direction is parallel to the lateral surface of the semiconductor device, and the second direction is perpendicular to the lateral surface of the semiconductor device.