Detection substrate and ray detector
The disclosure provides a detection substrate and a ray detector, the detection substrate including a base substrate, an average atomic number of a material used for the base substrate being less than 30, a ray mass attenuation coefficient of the material used for the base substrate being positively correlated with power of 3-4 of the average atomic number, and the base substrate including a ray incident side; a photodiode on a side of the base substrate, and the side of the base substrate with the photodiode facing away from the ray incident side; and a scintillator layer on a side of the layer of the photodiode away from the base substrate.
1 . A detection substrate, comprising:
a base substrate, wherein an average atomic number of a material used for the base substrate is less than 30, a ray mass attenuation coefficient of the material used for the base substrate is positively correlated with power of 3-4 of the average atomic number, and the base substrate comprises a ray incident side;
a photodiode on a side of the base substrate, wherein the side of the base substrate with the photodiode faces away from the ray incident side; and
a scintillator layer, on a side of a layer of the photodiode away from the base substrate;
wherein the detection substrate further comprises a first planarization layer between a layer of the photodiode and the base substrate;
wherein the photodiode comprises a first electrode, a photovoltaic conversion material layer and a second electrode arranged in stack, and the second electrode is adjacent to the scintillator layer;
wherein the detection substrate further comprises a driving circuit, wherein
a layer of the driving circuit is disposed between the base substrate and the first planarization layer; and
the driving circuit is electrically connected with the first electrode through a via running through the first planarization layer.
2 . The detection substrate according to claim 1 , wherein the base substrate is a flexible substrate.
3 . The detection substrate according to claim 2 , wherein a material of the flexible substrate comprises at least one of polyimide, polyethylene glycol terephthalate, polyethylene naphthalate, polymethyl methacrylate, organic silica gel or resin.
4 . The detection substrate according to claim 3 , wherein the flexible substrate comprises a polyimide layer.
5 . The detection substrate according to claim 4 , wherein the flexible substrate further comprises a polyethylene glycol terephthalate layer, and the polyethylene glycol terephthalate layer is disposed on a side of the polyimide layer away from the layer of the photodiode.
6 . The detection substrate according to claim 4 , wherein a thickness of the polyimide layer is less than 100 μm in a direction perpendicular to the base substrate.
7 . The detection substrate according to claim 1 , wherein the base substrate is a rigid substrate.
8 . The detection substrate according to claim 1 , wherein a thickness of the base substrate is less than or equal to 1000 μm in a direction perpendicular to the base substrate.
9 . The detection substrate according to claim 1 , wherein a glass-transition temperature of the base substrate is greater than 200° C.
10 . The detection substrate according to claim 1 , wherein an orthographic projection of the driving circuit on the base substrate is located in an orthographic projection of the photovoltaic conversion material layer on the base substrate.
11 . The detection substrate according to claim 1 , wherein an orthographic projection of the driving circuit on the base substrate does not overlap an orthographic projection of the photovoltaic conversion material layer on the base substrate.
12 . The detection substrate according to claim 1 , wherein the driving circuit comprises an amorphous-silicon transistor, and the amorphous-silicon transistor is a top-gate transistor or a bottom-gate transistor.
13 . The detection substrate according to claim 1 , wherein the driving circuit comprises an oxide transistor, and the oxide transistor is a bottom-gate transistor.
14 . A ray detector, comprising a detection substrate and a ray source, wherein the detection substrate comprises:
a base substrate, wherein an average atomic number of a material used for the base substrate is less than 30, a ray mass attenuation coefficient of the material used for the base substrate is positively correlated with power of 3-4 of the average atomic number, and the base substrate comprises a ray incident side;
a photodiode on a side of the base substrate, wherein the side of the base substrate with the photodiode faces away from the ray incident side; and
a scintillator layer, on a side of a layer of the photodiode away from the base substrate;
and rays emitted by the ray source irradiate into the detection substrate from the ray incident side;
wherein the detection substrate further comprises a first planarization layer between a layer of the photodiode and the base substrate;
wherein the photodiode comprises a first electrode, a photovoltaic conversion material layer and a second electrode arranged in stack, and the second electrode is adjacent to the scintillator layer;
wherein the detection substrate further comprises a driving circuit, wherein
a layer of the driving circuit is disposed between the base substrate and the first planarization layer; and
the driving circuit is electrically connected with the first electrode through a via running through the first planarization layer.