Semiconductor devices
A semiconductor device is provided. The semiconductor device includes a first optical transceiver, a second optical transceiver and a component. The component is configured to provide a magnetic field to change a light emitting direction from the first optical transceiver to the second optical transceiver or from the second optical transceiver to the first optical transceiver.
1 . A semiconductor device, comprising:
a first optical transceiver;
a second optical transceiver;
a component configured to provide a magnetic field to change a light emitting direction from the first optical transceiver to the second optical transceiver or from the second optical transceiver to the first optical transceiver; and
an encapsulant covering the component and defining a light channel between the first optical transceiver and the second optical transceiver.
2 . The semiconductor device of claim 1 , wherein the component is disposed between the first optical transceiver and the second optical transceiver.
3 . The semiconductor device of claim 1 , wherein the first optical transceiver comprises a fiber array unit (FAU), and the second optical transceiver comprises a photonic integrated circuit (PIC) having a sensing region.
4 . The semiconductor device of claim 3 , further comprising an electronic integrated circuit (EIC) disposed between the FAU and the PIC, wherein the EIC is electrically connected to the PIC through the component.
5 . The semiconductor device of claim 1 , wherein the second optical transceiver comprises a sensing region, wherein the component is disposed around the sensing region.
6 . The semiconductor device of claim 5 , wherein the light channel has a first end and a second end opposite to the first end, wherein the second end is adjacent to the sensing region, and wherein the second end has an aperture greater than an aperture of the first end.
7 . The semiconductor device of claim 1 , wherein the second optical transceiver comprises a sensing region exposed from the light channel.
8 . A semiconductor device, comprising:
a substrate;
a first optical transceiver disposed on the substrate;
a signal path modulation component disposed on the first optical transceiver and configured to regulate a direction of an optical signal toward or from the first optical transceiver by electrical current; and
a redistribution layer (RDL) disposed on the first optical transceiver, wherein the signal path modulation component is embedded in the RDL.
9 . The semiconductor device of claim 8 , wherein the first optical transceiver has a sensing region and the signal path modulation component is disposed around a periphery of the sensing region.
10 . The semiconductor device of claim 9 , wherein the signal path modulation component comprises a first optical signal path modulation element disposed adjacent to a first side of the sensing region and a second optical signal path modulation element disposed adjacent to a second side of the sensing region opposite to the first side.
11 . The semiconductor device of claim 10 , wherein the first signal path modulation element produces a first magnetic field toward the sensing region by a first electrical current and the second path modulation element provides a second magnetic field toward the sensing region by a second electrical current.
12 . The semiconductor device of claim 8 , further comprising an electronic component (EIC) disposed on the RDL and electrically connected to the first optical transceiver through the RDL.
13 . The semiconductor device of claim 8 , further comprising a second optical transceiver disposed over the first optical transceiver.
14 . The semiconductor device of claim 13 , wherein optical signals from the second optical transceiver are concentrated by the signal path modulation component before entering the first optical transceiver.
15 . A semiconductor device, comprising:
an optical transceiver having a sensing region;
a redistribution structure disposed on the optical transceiver and defining an opening exposing the sensing region of the optical transceiver; and
an electronic component disposed on the redistribution structure;
wherein the redistribution structure comprises a first path for electrically connecting the electronic component with the optical transceiver and a second path for regulating a direction of an optical signal toward or from the optical transceiver.
16 . The semiconductor device of claim 15 , wherein the second path is in the form of a coil.
17 . The semiconductor device of claim 16 , wherein the redistribution structure comprises:
a first dielectric layer,
a plurality of first traces on the first dielectric layer,
a second dielectric layer on the first dielectric layer and covering the plurality of first traces, and
a plurality of second traces on the second dielectric layer,
a plurality of conductive vias penetrating the second dielectric layer
wherein the plurality of first traces and the plurality of second traces are connected by the plurality of conductive vias to form the coil.