Photomask and manufacturing method of semiconductor device

1 . A photomask, comprising:

a plurality of main patterns;

a plurality of first sub-resolution patterns disposed aside the plurality of main patterns; and

a plurality of second sub-resolution patterns disposed between and connected to adjacent two of the plurality of first sub-resolution patterns,

wherein the main patterns extend along a first direction and have end portions, the first sub-resolution patterns and the second sub-resolution patterns are separated from the main patterns, the first sub-resolution patterns extend along the first direction and beyond the end portions, a length of an excess portion of the first sub-resolution pattern extended along the first direction is a first distance, the second sub-resolution patterns extend along a second direction perpendicular to the first direction and beyond the end portions, a length of an excess portion of the second sub-resolution pattern extended along the first direction is a second distance, and the first distance is different from the second distance.

2 . The photomask of claim 1 , wherein an extension direction of the first sub-resolution patterns is perpendicular to an illumination polar axis direction of an exposure apparatus, and an extension direction of the second sub-resolution patterns is parallel to the illumination polar axis direction of the exposure apparatus.

3 . The photomask of claim 1 , wherein a difference between a phase of the first sub-resolution patterns and a phase of the second sub-resolution patterns is 180 degrees.

4 . The photomask of claim 1 , wherein a phase of the main patterns and a phase of the second sub-resolution patterns are both 180 degrees, and a phase of the first sub-resolution patterns is 0 degree.

5 . The photomask of claim 1 , wherein the main patterns, the first sub-resolution patterns and the second sub-resolution patterns have the same transmittance.

6 . The photomask of claim 1 , wherein the second sub-resolution patterns have the same pitch.

7 . The photomask of claim 1 , wherein the second sub-resolution patterns have different pitches.

8 . The photomask of claim 1 , wherein the first sub-resolution patterns are strip patterns parallel to each other and located at two sides of the main patterns, and the second sub-resolution patterns are connected adjacent two of the first sub-resolution patterns.

9 . The photomask of claim 1 , wherein the photomask is suitable for imaging the plurality of main patterns to a plurality of line patterns of a photoresist layer, and the first sub-resolution patterns and the second sub-resolution patterns are not imaged to the photoresist layer.