Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
A multilayered-reflective-film-provided substrate includes: a substrate; a multilayered reflective film provided on the substrate; and a protective film provided on the multilayered reflective film, in which the protective film includes ruthenium (Ru) and at least one additive material selected from aluminum (Al), yttrium (Y), zirconium (Zr), rhodium (Rh), and hafnium (Hf), and a content of the additive material is 5% or more by atom and less than 50% by atom.
1 . A multilayered-reflective-film-provided substrate comprising:
a substrate;
a multilayered reflective film provided above the substrate; and
a protective film provided above the multilayered reflective film, wherein
the protective film includes a first layer including a ruthenium (Ru) compound containing ruthenium (Ru), rhodium (Rh) and at least one of the following elements: magnesium (Mg), aluminum (Al), vanadium (V), chromium (Cr), germanium (Ge), hafnium (Hf) and tungsten (W),
wherein a proportion of Ru in the Ru compound is greater than 50% by atom and less than 100% by atom.
2 . The multilayered-reflective-film-provided substrate according to claim 1 , wherein;
the protective film further includes a second layer,
the second layer includes ruthenium (Ru) and an additive material, and
the additive material includes at least one of the following elements: aluminum (Al), yttrium (Y), zirconium (Zr), rhodium (Rh), and hafnium (Hf).
3 . The multilayered-reflective-film-provided substrate according to claim 1 , wherein
the first layer further includes nitrogen (N).
4 . The multilayered-reflective-film-provided substrate according to claim 2 , wherein
a content of Ru in the second layer is less than a content of Ru in the first layer.
5 . A reflective mask blank comprising:
a substrate;
a multilayered reflective film provided above the substrate;
a protective film provided above the multilayered reflective film; and
an absorber film above the protective film, wherein
the protective film includes a first layer including a ruthenium (Ru) compound containing ruthenium (Ru), rhodium (Rh) and at least one of the following elements: magnesium (Mg), aluminum (Al), vanadium (V), chromium (Cr), germanium (Ge), hafnium (Hf) and tungsten (W),
wherein a proportion of Ru in the Ru compound is greater than 50% by atom and less than 100% by atom.
6 . The reflective mask blank according to claim 5 , wherein
the protective film further includes a second layer,
the second layer includes ruthenium (Ru) and an additive material, and
the additive material includes at least one of the following elements: aluminum (Al), yttrium (Y), zirconium (Zr), rhodium (Rh), and hafnium (Hf).
7 . The reflective mask blank according to claim 6 , wherein the first layer further includes nitrogen (N).
8 . The reflective mask blank according to claim 6 , wherein
a content of Ru in the second layer is less than a content of Ru in the first layer.
9 . The reflective mask blank according to claim 5 , further comprising:
an etching mask film including chromium (Cr), above the absorber film.
10 . A reflective mask comprising:
a substrate;
a multilayered reflective film provided above the substrate;
a protective film provided above the multilayered reflective film; and
an absorber pattern above the protective film,
wherein:
the protective film includes a first layer including a ruthenium (Ru) compound containing ruthenium (Ru), rhodium (Rh) and at least one of the following elements: magnesium (Mg), aluminum (Al), vanadium (V), chromium (Cr), germanium (Ge), hafnium (Hf) and tungsten (W), and
wherein a proportion of Ru in the Ru compound is greater than 50% by atom and less than 100% by atom.
11 . The reflective mask according to claim 10 , wherein;
the protective film further includes a second layer,
the second layer includes ruthenium (Ru) and an additive material, and
the additive material includes at least one of the following elements: aluminum (Al), yttrium (Y), zirconium (Zr), rhodium (Rh), and hafnium (Hf).
12 . The reflective mask according to claim 11 , wherein the first layer further includes nitrogen (N).
13 . The reflective mask according to claim 11 , wherein
a content of Ru in the second layer is less than a content of Ru in the first layer.
14 . A method of manufacturing a reflective mask, the method comprising:
patterning the etching mask film of the reflective mask blank according to claim 9 to form an etching mask pattern;
patterning the absorber film with the etching mask pattern as a mask, to form an absorber pattern; and
removing the etching mask pattern by a gaseous mixture of chlorine-based gas and oxygen gas.
15 . A method of manufacturing a semiconductor device, the method comprising:
setting the reflective mask according to claim 10 to an exposure device including an exposure light source that emits EUV light; and
transferring a transfer pattern to a resist film formed on a substrate to which transfer is to be performed.
16 . The multilayered-reflective-film-provided substrate according to claim 1 , wherein
a content of Rh in the first layer is 15% or more by atom and less than 50% by atom.
17 . The multilayered-reflective-film-provided substrate according to claim 3 , wherein
a content of N in the first layer is 1% or more by atom and less than 20% by atom.
18 . The reflective mask blank according to claim 5 , wherein
a content of Rh in the first layer is 15% or more by atom and less than 50% by atom.
19 . The reflective mask blank according to claim 7 , wherein
a content of N in the first layer is 1% or more by atom and less than 20% by atom.
20 . The reflective mask according to claim 10 , wherein
a content of Rh in the first layer is 15% or more by atom and less than 50% by atom.
21 . The reflective mask according to claim 12 , wherein
a content of N in the first layer is 1% or more by atom and less than 20% by atom.