IP Library Granted Patent US 12699323
Granted Patent B2
US 12699323 · App. 18/668,590 · Granted Aug 4, 2026

Lithography apparatus, patterning system, and method of patterning a layered structure

Inventor: Christopher Dennis Bencher (Santa Clara, CA)
Assignee: Applied Materials, Inc.
G03F7/70208G03F1/70G03F7/70008G03F7/70275G03F7/70283G03F7/70316G03F7/70575
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Quick Facts
Patent No.
US 12699323
App. No.
18/668,590
Granted
Aug 4, 2026
Kind
B2
Abstract

Embodiments of the present disclosure include a lithography apparatus, patterning system, and method of patterning a layered structure. The patterning system includes an image formation device and a reactive layer. The patterning system allows for creating lithography patterns in a single operation. The lithography apparatus includes the patterning system and an optical system. The lithography apparatus uses a plurality of wavelengths of light, along with the image formation device, to create a plurality of color patterns on the reactive layer. The method of patterning includes exposing the reactive layer to a plurality of wavelengths of light. The light reacts differently with different regions of the reactive layer, depending on the wavelength of light emitted onto the different regions. The method and apparatuses disclosed herein require only one image formation device and one lithography operation.

Claims (44)

1 . A lithography apparatus operable to pattern a reactive layer of material having a first photoacid generator (PAG) a first photobase generator (PBG), and a second PBG, the lithography apparatus comprising:

a substrate support configured to support the reactive layer of material;

a light source system configured to emit light at two or more wavelengths including a first wavelength and a second wavelength; and

an image formation device configured to project two or more different color images corresponding to two or more different sets of device geometries, wherein in operation the first wavelength activates the first PAG and the first PBG and the second wavelength activates the second PBG.

2 . The lithography apparatus of claim 1 , wherein

the light source system comprises a light source configured to emit light at the two or more wavelengths,

the image formation device comprises a mask, and

the mask is configured to project light images at the two or more wavelengths.

3 . The lithography apparatus of claim 2 , wherein the mask comprises at least one spatial light modulator, wherein the mask is configured to sequentially project the light images at the two or more wavelengths.

4 . The lithography apparatus of claim 3 , wherein the at least one spatial light modulator is a digital micromirror device (DMD).

5 . The lithography apparatus of claim 2 , wherein the mask includes:

a first spatial light modulator configured to project the light at the first wavelength of the two or more wavelengths, and

a second spatial light modulator configured to project the light at the second wavelength of the two or more wavelengths.

6 . The lithography apparatus of claim 5 , wherein the first spatial light modulator is a first digital micromirror device (DMD) and the second spatial light modulator is a second DMD.

7 . The lithography apparatus of claim 2 , wherein

the mask comprises a first photomask and a second photomask,

the first photomask is configured to project the light at the first wavelength of the two or more wavelengths, and

the second photomask is configured to project the light at the second wavelength of the two or more wavelengths.

8 . A lithography apparatus operable to pattern a reactive layer of material having a first photoacid generator (PAG), a first photobase generator (PBG), and a second PBG, the lithography apparatus comprising:

a substrate support configured to support the reactive layer of material;

a light source system able to emit light at two or more wavelengths including a first wavelength and a second wavelength; and

an image formation device, the image formation device comprising a mask, the mask operable to:

generate a first light image at the first wavelength to be projected to a first region of the reactive layer of material such that the first wavelength activates the first PAG and the first PBG; and

generate a second light image at the second wavelength to be projected to a second region of the reactive layer of material, the first light image and the second light image having different doses such that the second wavelength activates the second PBG.

9 . The lithography apparatus of claim 8 , wherein a portion of the second light image projected to the second region at least partially overlaps with the first light image projected to the first region.

10 . The lithography apparatus of claim 8 , wherein the mask comprises at least one spatial modulator configured to project light images at the two or more wavelengths.

11 . The lithography apparatus of claim 10 , wherein

a first spatial modulator comprises a first digital micromirror device (DMD) and a second spatial modulator comprises second DMD,

the first DMD is configured to project the light at the first wavelength of the two or more wavelengths, and

the second DMD is configured to project the light at the second wavelength of the two or more wavelengths.

12 . A method of patterning a layered structure, comprising:

disposing a reactive layer over the layered structure; and

exposing the reactive layer comprising a reactive material comprising a first region and a second region to a plurality of wavelengths of light through an image formation device, the reactive material comprises a first photoacid generator (PAG), a first photobase generator (PBG), and a second PBG, the exposing the reactive layer comprising:

generating a first light image at a first wavelength to the first region of the reactive layer, each of the first PAG and the first PBG are active at the first wavelength; and

generating a second light image at a second wavelength to the second region of the reactive layer, the first light image and the second light image having different doses, the second PBG is active at the second wavelength.

13 . The method of claim 12 , wherein the reactive layer is exposed through the image formation device comprising:

a first device region able to generate the first light image at the first wavelength to be projected to the first region of the reactive layer; and

a second device region able to generate the second light image at the second wavelength to be projected to the second region of the reactive layer.

14 . The method of claim 12 , wherein the image formation device comprises a photomask and the first light image and the second light image are projected through the photomask.

15 . The method of claim 12 , wherein the image formation device comprises a first photomask and a second photomask and the first light image is projected through the first photomask and the second light image is projected through the second photomask.

16 . The method of claim 12 , wherein the reactive layer comprises a photoresist and the image formation device comprises a spatial modulator including one or more digital micromirror devices (DMDs).

17 . The method of claim 12 , wherein the exposing the first region and the second region occur simultaneously.

18 . The method of claim 12 , wherein the exposing the first region and the second region occur sequentially, and the exposing the first region and the second region are repeated one or more times.

19 . The method of claim 12 , wherein the first region and the second region at least partially overlap.