IP Library Granted Patent US 12699378
Granted Patent B2
US 12699378 · App. 18/423,356 · Granted Aug 4, 2026

Autonomous evaluation method and autonomous evaluation device for semiconductor smart manufacturing

Inventors: Yung-Chien Kung (Tainan City, TW); Li-Hsin Yang (Tainan City, TW); Chung-Hsien Wu (Hsinchu City, TW); Pang-Min Wang (Taoyuan City, TW)
Assignee: UNITED MICROELECTRONICS CORP.
G05B19/4155G05B2219/45031
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12699378
App. No.
18/423,356
Granted
Aug 4, 2026
Kind
B2
Abstract

An autonomous evaluation method and an autonomous evaluation device for semiconductor smart manufacturing are provided. The autonomous evaluation method for the semiconductor smart manufacturing includes the following steps. For each of a plurality of apparatuses, a task completion ratio of each of a plurality of automation functions implemented in a plurality process tasks is analyzed. The task completion ratios of the automation functions are mapped to an evaluation matrix to obtain a depth level corresponding to each of the apparatuses. A plurality of expansion ratios corresponding to the depth levels of the apparatuses are analyzed. A comprehensive indicator is analyzed according to the depth levels and the expansion ratios.

Claims (17)

1 . An autonomous evaluation method for semiconductor smart manufacturing, comprising:

analyzing, for each of a plurality of apparatuses, a task completion ratio of each of a plurality of automation functions implemented in a plurality of process tasks;

mapping the task completion ratios of the automation functions to an evaluation matrix, to obtain a depth level corresponding to each of the apparatuses;

analyzing a plurality of expansion ratios corresponding to the depth levels of the apparatuses;

analyzing a comprehensive indicator according to the depth levels and the expansion ratios, wherein the comprehensive indicator is a sum of products of the depth levels and the expansion ratios; and

monitoring the semiconductor smart manufacturing according to the comprehensive indicator.

2 . The autonomous evaluation method for the semiconductor smart manufacturing according to claim 1 , wherein the automation functions include automatic data collection, automatic reporting, automatic analysis, automatic recommendation, automatic execution and automatic monitoring.

3 . The autonomous evaluation method for the semiconductor smart manufacturing according to claim 1 , wherein each of the task completion ratios is 0% to 100%.

4 . The autonomous evaluation method for the semiconductor smart manufacturing according to claim 1 , wherein the depth levels are 0 to 5.

5 . The autonomous evaluation method for the semiconductor smart manufacturing according to claim 1 , wherein the evaluation matrix records a plurality of completion threshold ratios.

6 . The autonomous evaluation method for the semiconductor smart manufacturing according to claim 5 , wherein in the evaluation matrix, the completion threshold ratios remain unchanged or increase in an order of the automation functions.

7 . The autonomous evaluation method for the semiconductor smart manufacturing according to claim 5 , wherein in the evaluation matrix, the completion threshold ratios remain unchanged or increase in an order of the depth levels.

8 . An autonomous evaluation device for semiconductor smart manufacturing, comprising:

a task evaluating unit, configured to analyze, for each of a plurality of apparatuses, a task completion ratio of each of a plurality of automation functions implemented in a plurality of process tasks;

a depth analyzing unit, configured to map the task completion ratios of the automation functions to an evaluation matrix, to obtain a depth level corresponding to each of the apparatuses;

an expansion analyzing unit, configured to analyze a plurality of expansion ratios corresponding to the depth levels of the apparatuses; and

an indicator analyzing unit, configured to analyze a comprehensive indicator according to the depth levels and the expansion ratios, wherein the comprehensive indicator is a sum of products of the depth levels and the expansion ratios, and the semiconductor smart manufacturing is monitored according to the comprehensive indicator.