IP Library › Granted Patent US 12700371
Granted Patent B2
US 12700371 · App. 19/018,230 · Granted Aug 4, 2026

Electronic device

Inventors: Sheng-Feng Huang (Miao-Li County, TW); Chien-Feng Shih (Miao-Li County, TW)
Assignee: Prevalent Display LLC
G09G3/3266G09G3/20G09G3/3225G09G3/3233G11C19/28G11C19/287H10K59/1213G09G3/3677G09G2300/043G09G2310/0286G09G2310/0289G09G2310/08G09G2320/045
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Quick Facts
Patent No.
US 12700371
App. No.
19/018,230
Granted
Aug 4, 2026
Kind
B2
Abstract

An electronic device includes a substrate, a first transistor, a second transistor, an electronic unit and a conductor. The first transistor is disposed on the substrate and comprises a first semiconductor layer. The second transistor is disposed on the substrate and comprises a second semiconductor layer, wherein a material of the first semiconductor layer is different from a material of the second semiconductor layer. The electronic unit is disposed on the substrate and electrically connected to the second transistor. The conductor is electrically connected to the first semiconductor layer and the second semiconductor layer.

Claims (26)

1 . An electronic device, comprising:

a substrate;

an oxide semiconductor layer disposed on the substrate;

a silicon semiconductor layer disposed on the substrate;

an electronic unit disposed on the substrate and electrically connected to the silicon semiconductor layer; and

a conductor electrically connected to the oxide semiconductor layer and the silicon semiconductor layer,

wherein, along a normal direction of the substrate, a first distance between the oxide semiconductor layer and the substrate is greater than a second distance between the silicon semiconductor layer and the substrate.

2 . The electronic device as claimed in claim 1 , wherein the electronic unit is an OLED.

3 . The electronic device as claimed in claim 1 , wherein the electronic unit is a micro-LED.

4 . The electronic device as claimed in claim 1 , wherein the conductor is directly connected to the oxide semiconductor layer.

5 . The electronic device as claimed in claim 1 , wherein the conductor is directly connected to the silicon semiconductor layer.

6 . The electronic device as claimed in claim 1 , wherein the conductor is directly connected to the oxide semiconductor layer and the silicon semiconductor layer.

7 . The electronic device as claimed in claim 1 , further comprising a gate electrode disposed on the silicon semiconductor layer.

8 . The electronic device as claimed in claim 1 , further comprising a gate electrode disposed under the oxide semiconductor layer.

9 . The electronic device as claimed in claim 1 , further comprising a first gate electrode disposed on the silicon semiconductor layer and a second gate electrode disposed under the oxide semiconductor layer, wherein the first gate electrode and the second gate electrode are located in a same layer.

10 . The electronic device as claimed in claim 1 , further comprising a gate driving circuit outputting a signal and a driving circuit receiving the signal, and the driving circuit comprises the silicon semiconductor layer and the oxide semiconductor layer.

11 . The electronic device as claimed in claim 10 , further comprising a gate electrode disposed on the silicon semiconductor layer.

12 . The electronic device as claimed in claim 11 , wherein the gate electrode receives the signal.

13 . The electronic device as claimed in claim 1 , wherein in a top view of the electronic device, a portion of the silicon semiconductor layer is overlapped with the oxide semiconductor layer.

14 . The electronic device as claimed in claim 1 , wherein in a top view of the electronic device, the silicon semiconductor layer is overlapped with the substrate.

15 . The electronic device as claimed in claim 1 , further comprising a gate electrode disposed on the silicon semiconductor layer, wherein the gate electrode and the silicon semiconductor layer is configured to be a transistor.

16 . The electronic device as claimed in claim 1 , further comprising a gate electrode disposed under the oxide semiconductor layer, wherein the gate electrode and the oxide semiconductor layer is configured to be a transistor.

17 . The electronic device as claimed in claim 1 , further comprising a first gate electrode disposed on the silicon semiconductor layer and a second gate electrode disposed under the oxide semiconductor layer, wherein the first gate electrode and the silicon semiconductor layer is configured to be a first transistor, the second gate electrode and the oxide semiconductor layer is configured to be a second transistor, and the first gate electrode and the second gate electrode are located in a same layer.

18 . The electronic device as claimed in claim 17 , further comprising a gate driving circuit outputting a signal and a driving circuit receiving the signal, and the driving circuit comprises the first transistor and the second transistor.

19 . The electronic device as claimed in claim 18 , wherein the first transistor receives the signal.

20 . The electronic device as claimed in claim 18 , wherein the second transistor receives the signal, wherein during a first period, the signal has a middle voltage, during a second period after the first period, the signal has a low voltage, and during a third period after the second period, the signal has a high voltage.