Semiconductor memory device
Provided is a semiconductor memory device including a first die and a second die disposed on the first die. The first die includes a substrate, a memory cell array having a plurality of memory cells disposed along a first direction perpendicular to a main surface of the substrate, a plurality of first conductive lines electrically connected to the memory cell array and extending in the first direction, the first conductive lines being bit lines or word lines, and a bonding layer having a plurality of bonding pads electrically connected to the plurality of first conductive lines, respectively. At least one of the plurality of bonding pads is provided at a position shifted from the first conductive line to which the at least one bonding pad is connected, when viewed from the first direction. The second die is provided on the bonding layer.
1 . A semiconductor memory device comprising: a first die; and a second die disposed on the first die, wherein
the first die includes
a substrate,
a memory cell array having a plurality of memory cells disposed along a first direction perpendicular to a main surface of the substrate,
a plurality of first conductive lines electrically connected to the memory cell array and extending in the first direction, the first conductive lines being bit lines or word lines, and
a bonding layer having a plurality of bonding pads electrically connected to the plurality of first conductive lines, respectively, at least one of the plurality of bonding pads being provided at a position shifted from the first conductive line to which the at least one bonding pad is connected, when viewed from the first direction, and
the second die is provided on the bonding layer.
2 . The semiconductor memory device according to claim 1 , wherein at least another one of the plurality of bonding pads is provided at a position overlapping the memory cell array, when viewed from the first direction.
3 . The semiconductor memory device according to claim 1 , wherein at least another one of the plurality of bonding pads is provided at a position overlapping the first conductive line to which the at least another bonding pad is connected, when viewed from the first direction.
4 . The semiconductor memory device according to claim 1 , wherein a pitch between the bonding pads closest to each other when viewed from the first direction is greater than a pitch between the first conductive lines closest to each other when viewed from the first direction.
5 . The semiconductor memory device according to claim 1 , further comprising: a plurality of contact lines that electrically connect the plurality of first conductive lines and the corresponding bonding pads, respectively.
6 . The semiconductor memory device according to claim 5 , wherein at least one of the plurality of contact lines has a part extending in a direction parallel to the main surface of the substrate and a part extending in the first direction.
7 . The semiconductor memory device according to claim 6 , wherein at least one of the plurality of contact lines extends only in the first direction.
8 . The semiconductor memory device according to claim 4 , wherein the pitch between the bonding pads is 500 nm or more.
9 . The semiconductor memory device according to claim 4 , wherein the pitch between the first conductive lines is less than 500 nm.
10 . The semiconductor memory device according to claim 1 , wherein the memory cell array has a plurality of memory cells extending in a second direction parallel to the main surface of the substrate, and the memory cells are spaced apart from one another along a third direction parallel to the main surface of the substrate and orthogonal to the second direction.
11 . The semiconductor memory device according to claim 10 , wherein the first conductive lines are spaced apart from one another along the third direction.
12 . The semiconductor memory device according to claim 10 , further comprising: a plurality of second conductive lines electrically connected to the memory cell array and extending in the third direction, wherein the second conductive lines are word lines when the first conductive lines are the bit lines, and are the bit lines when the first conductive lines are the word lines.
13 . The semiconductor memory device according to claim 12 , wherein the second conductive lines are spaced apart from one another along the first direction.
14 . The semiconductor memory device according to claim 13 , wherein the plurality of second conductive lines are disposed in a stepped manner at one end in the third direction.
15 . The semiconductor memory device according to claim 14 , wherein a plurality of bonding pads electrically connected to the plurality of second conductive lines are formed in the bonding layer, and each of the bonding pad is connected to an end portion of the corresponding second conductive lines through the contact lines.
16 . The semiconductor memory device according to claim 15 , wherein at least one of the contact lines has a part extending in a direction parallel to the main surface of the first substrate and a part extending in the first direction.
17 . The semiconductor memory device according to claim 16 , wherein at least one of the contact lines extends only in the first direction.
18 . The semiconductor memory device according to claim 10 , wherein the memory cell array has first memory cells provided on one side of the plurality of first conductive lines in the second direction, and second memory cells provided on the other side of the plurality of first conductive lines in the second direction.
19 . The semiconductor memory device according to claim 10 , wherein the memory cell has a MOS transistor and a capacitor.
20 . The semiconductor memory device according to claim 1 , wherein
the second die includes
a bonding layer disposed on the bonding layer of the first die and having a plurality of second bonding pads bonded to the bonding pads of the first die,
a circuit electrically connected to the plurality of second bonding pads, and
a substrate provided on the circuit.