IP Library Granted Patent US 12700512
Granted Patent B2
US 12700512 · App. 19/297,550 · Granted Aug 4, 2026

Stabilization of Z-pinch with directed radio frequency excitation

Inventors: Jeremy Scholz (Berkeley, CA); Alexander Sherman (Berkeley, CA); David Berlin (Richmond, CA); Aviv Zohman (Berkeley, CA); Jerry Chien (Walnut Creek, CA); Matthew Robinson (Orinda, CA); Megumi Hora (Berkeley, CA)
Assignee: JUPITER VOLTA INC.
G21B1/05
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Quick Facts
Patent No.
US 12700512
App. No.
19/297,550
Granted
Aug 4, 2026
Kind
B2
Abstract

A plasma processing method includes driving electric current through a Z-pinch plasma column within an atmospheric isolation device to produce a Lorentz force on the Z-pinch plasma column. Radiofrequency (RF) energy is supplied to the Z-Pinch plasma column with one or more RF generators. One or more RF applicators direct RF energy from the one or more RF generators toward the Z-pinch plasma column in a direction generally perpendicular to the direction of the electric current through the Z-pinch plasma column. One or more RF distributors distribute the RF energy to the one or more RF applicators.

Claims (26)

1 . A plasma processing method, comprising:

driving electric current through a Z-pinch plasma column within an atmospheric isolation device to produce a Lorentz force on the Z-pinch plasma column; and

supplying radiofrequency (RF) energy to the Z-Pinch plasma column with one or more RF generators configured to drive energy into regions of the Z-pinch plasma column after formation of the Z-pinch plasma column to stabilize the Z-pinch plasma column and after starting said driving electric current through the Z-pinch plasma column,

wherein one or more RF applicators direct RF energy from the one or more RF generators toward the Z-pinch plasma column in a direction generally perpendicular to the direction of the electric current through the Z-pinch plasma column, and

wherein one or more RF distributors distribute the RF energy to the one or more RF applicators.

2 . The method of claim 1 , further comprising initiating nuclear fusion with a Z-pinch occurring in the Z-pinch plasma column as a result of the Lorentz force and extracting energy from the nuclear fusion resulting from the Z-pinch occurring in the Z-pinch plasma column.

3 . The method of claim 1 , further comprising supplying radiofrequency (RF) energy to a region within the atmospheric isolation device to initiate the Z-pinch plasma column prior to the driving the electric current through the Z-pinch plasma column.

4 . The method of claim 1 , further comprising delivering one or more fusion reactants to an environment within the atmospheric isolation device.

5 . The method of claim 4 , wherein the one or more fusion reactants include deuterium.

6 . The method of claim 4 , wherein the one or more fusion reactants include deuterium and tritium.

7 . The method of claim 4 , wherein the one or more fusion reactants include a boron-containing gas and hydrogen.

8 . The method of claim 4 , wherein the one or more fusion reactants include a helium 3-containing gas and deuterium.

9 . The method of claim 4 , wherein the one or more fusion reactants include hydrogen and lithium-6.

10 . The method of claim 1 , further comprising introducing one or more down-stream reagents into the Z-pinch plasma column.

11 . The method of claim 10 , further comprising collecting products of the one or more down-stream reagents in a down-stream reaction chamber.

12 . The method of claim 10 , further comprising performing secondary reactions on products of the one or more down-stream reagents in a down-stream reaction chamber.

13 . The method of claim 12 , further comprising inputting one or more secondary reactants into the down-stream reaction chamber.

14 . The method of claim 10 , further comprising entraining the Z-pinch plasma column into an output stream with a venturi nozzle.

15 . The method of claim 14 , further comprising using the output stream to etch or cut a substrate.

16 . The method of claim 1 , further comprising irradiating a substrate through a window in the atmospheric isolation device with radiation from the Z-pinch plasma column as a result a Z-pinch due to the Lorentz force.

17 . The method of claim 1 , further comprising shaping the Z-pinch plasma column into a single Z-pinch plasma column using one or more angled gas flows.

18 . The method of claim 1 , wherein the one or more RF distributors are configured to ensure that one or more RF applicators distribute power to the Z-pinch plasma column in a cylindrically symmetric manner.

19 . The method of claim 1 , wherein driving electric current through a Z-pinch plasma column within the atmospheric isolation device to produce a Lorentz force on the Z-pinch plasma column includes driving sufficient electric current through the Z-pinch plasma column within the atmospheric isolation device to produce a Lorentz force sufficient to compress the Z-pinch plasma column.

20 . The method of claim 1 , wherein, prior to driving the electric current through the Z-Pinch plasma column, the Z-Pinch plasma column is characterized by a diameter of λ RF /4 or less, where λ RF is a wavelength of the RF energy, and a gas pressure within the atmospheric isolation device of between 0.5 kilopascals (kPa) and 2 kPa, and a ratio of a power density of the RF energy to the gas pressure within the atmospheric isolation device of between 0.2 W/mm 3 kPa and 0.4 W/mm 3 kPa.

21 . The method of claim 1 , wherein, prior to driving the electric current through the Z-Pinch plasma column, the Z-Pinch plasma column is characterized by a diameter of between 2.5 millimeters (mm) and 12 mm, and a gas pressure within the atmospheric isolation device of between 2 kilopascals (kPa) and 50 kPa, and a ratio of a power density of the RF energy to the gas pressure within the atmospheric isolation device of between 0.2 W/mm 3 kPa and 12 W/mm 3 kPa.

22 . The method of claim 1 , wherein, prior to driving the electric current through the Z-Pinch plasma column, the Z-Pinch plasma column is characterized by a diameter of between 1 millimeter (mm) and 6 mm, and a gas pressure within the atmospheric isolation device of between 50 kilopascals (kPa) and 500 kPa, and wherein a ratio of a power density of the RF energy to the gas pressure within the atmospheric isolation device of between 0.4 W/mm 3 kPa and 2 W/mm 3 kPa.