Method and apparatus for continuous chained energy ion implantation
An ion implantation system and method that selectively varies an ion beam energy to a workpiece in sequential passes thereof in front of the beam. The implantation system has an ion source for generating the ion beam and an acceleration/deceleration stage for varying the energy of the ion beam based on an electrical bias supplied to the acceleration deceleration stage. A workpiece support is provided immediately downstream of the acceleration/deceleration stage to support a workpiece through the selectively varied energy ion beam, and can be thermally controlled to control a temperature of the workpiece during the variation of energy of the beam. The energy can be varied while the workpiece is positioned in front of the beam, and a controller can control the electrical bias to control the variation in energy of the ion beam, where a plurality of process recipes can be attained during a single positioning of the workpiece on the workpiece support.
1 . An ion implantation system for producing a chained energy implantation of ions, the ion implantation system comprising:
an ion source configured to ionize a dopant material and generate an ion beam;
an acceleration/deceleration stage configured to receive the ion beam, wherein the acceleration/deceleration stage is configured to selectively vary an energy of the ion beam based on one or more inputs thereto, thereby defining a a plurality of discrete energies of the ion beam;
a single workpiece end station positioned downstream of the acceleration/deceleration stage, wherein the single workpiece end station comprises a workpiece support configured to selectively expose a single workpiece to the ion beam;
a scanning apparatus configured to scan one or more of the ion beam and the workpiece support with respect to one another along a first scan axis and a second scan axis; and
a controller configured to control the scanning apparatus and the one or more inputs to the acceleration/deceleration stage to sequentially and uniformly expose an entirety of the single workpiece to each of the plurality of discrete energies of the ion beam, wherein the single workpiece is maintained on the workpiece support within the single workpiece end station concurrent with the selective variation of the energy of the ion beam.
2 . The ion implantation system of claim 1 , further comprising one or more power sources operably coupled to the acceleration/deceleration stage, and wherein the one or more inputs comprise one or more electrical bias signals.
3 . The ion implantation system of claim 2 , wherein the acceleration/deceleration stage comprises an electrode column having one or more electrode pairs, and wherein the one or more electrical bias signals are supplied to the one or more electrode pairs of the electrode column.
4 . The ion implantation system of claim 3 , wherein the electrode column comprises one or more of an ion beam accelerator, an ion beam decelerator, and a bend electrode.
5 . The ion implantation system of claim 2 , wherein the one or more electrical bias signals comprise one or more of a voltage and a current.
6 . The ion implantation system of claim 2 , a wherein the controller is operably coupled to the one or more power sources and configured to selectively vary the one or more electrical bias signals supplied to the acceleration/deceleration stage in accordance with a plurality of process recipes.
7 . The ion implantation system of claim 1 , further comprising a thermal apparatus configured to control a temperature of the single workpiece at a predetermined processing temperature on the workpiece support, and wherein the predetermined process temperature is associated with one of a high temperature configuration of the ion implantation system and a low temperature configuration of the ion implantation system.
8 . An ion implantation system configured to provide a selectively variable energy ion beam to a workpiece, the ion implantation system comprising:
an ion source configured to ionize a dopant material and generate an ion beam;
an acceleration/deceleration stage configured to receive the ion beam, wherein the acceleration/deceleration stage is configured to selectively vary an energy of the ion beam based on one or more inputs to the acceleration/deceleration stage, thereby defining a plurality of discrete energies of the selectively variable energy ion beam;
an end station positioned downstream of the acceleration/deceleration stage, wherein the end station comprises a workpiece support configured to selectively position the workpiece before the selectively variable energy ion beam for ion implantation thereby, wherein the workpiece is maintained on the workpiece support within the end station concurrent with the selective variation of the energy of the ion beam;
a scanning apparatus configured to scan one or more of the ion beam and the workpiece support with respect to one another along a first scan axis and a second scan axis to sequentially and uniformly expose an entirety of the single workpiece to each of the plurality of discrete energies of the selectively variable energy ion beam; and
a thermal apparatus configured to control a temperature of the workpiece at a predetermined processing temperature on the workpiece support, wherein the predetermined process temperature is associated with one of a high temperature configuration of the ion implantation system and a low temperature configuration of the ion implantation system.
9 . The ion implantation system of claim 8 , wherein the thermal apparatus comprises a thermal chuck, wherein the thermal chuck is configured to heat the workpiece in the high temperature configuration to greater than approximately 300 C.
10 . The ion implantation system of claim 9 , further comprising one or more power sources operably coupled to the acceleration/deceleration stage, and wherein the one or more inputs comprise one or more electrical bias signals.
11 . The ion implantation system of claim 10 , wherein the acceleration/deceleration stage comprises an electrode column having one or more electrode pairs, and wherein the one or more electrical bias signals are supplied to the one or more electrode pairs of the electrode column, and wherein the electrode column comprises one or more of an ion beam accelerator, an ion beam decelerator, and a bend electrode.
12 . The ion implantation system of claim 10 , further comprising a controller operably coupled to the one or more power sources and configured to selectively vary the one or more electrical bias signals supplied to the acceleration/deceleration stage in accordance with a plurality of process recipes.
13 . The ion implantation system of claim 8 , wherein the workpiece support comprises a single workpiece support configured to support only one workpiece.
14 . An ion implantation system configured to provide a selectively variable energy ion beam to a workpiece, the ion implantation system comprising:
an ion source configured to ionize a dopant material and generate an ion beam;
an acceleration/deceleration stage configured to receive the ion beam, wherein the acceleration/deceleration stage is configured to selectively vary an energy of the ion beam based on one or more inputs to the acceleration/deceleration stage thereby defining the selectively variable energy ion beam at a plurality of discrete energies; and
an end station positioned downstream of the acceleration/deceleration stage, wherein end station comprises a workpiece support configured to selectively position the workpiece before the selectively variable energy ion beam for ion implantation thereby, wherein the workpiece is maintained within the end station and continuously exposed to the ion beam concurrent with the selective variation of the energy of the ion beam, and wherein the workpiece support is configured to sequentially and uniformly expose an entirety of the workpiece to each of the plurality of discrete energies of the selectively variable energy ion beam.
15 . The ion implantation system of claim 14 , further comprising one or more power sources operably coupled to the acceleration/deceleration stage, and wherein the one or more inputs comprise one or more electrical bias signals.
16 . The ion implantation system of claim 15 , wherein the acceleration/deceleration stage comprises an electrode column having one or more electrode pairs, and wherein the one or more electrical bias signals are supplied to the one or more electrode pairs of the electrode column, and wherein the electrode column comprises one or more of an ion beam accelerator, an ion beam decelerator, and a bend electrode.
17 . The ion implantation system of claim 15 , further comprising a controller operably coupled to the one or more power sources and configured to selectively vary the one or more electrical bias signals supplied to the acceleration/deceleration stage in accordance with a plurality of process recipes.
18 . The ion implantation system of claim 14 , further comprising a thermal apparatus configured to control a temperature of the workpiece at a predetermined processing temperature on the workpiece support, and wherein the predetermined process temperature is associated with one of a high temperature configuration of the ion implantation system and a low temperature configuration of the ion implantation system.
19 . The ion implantation system of claim 1 , wherein each of the plurality of discrete energies is associated with each of a plurality of process recipes, respectively, wherein the controller is further configured to implant the entirety of the workpiece with ions according to each of the plurality of respective process recipes.
20 . The ion implantation system of claim 19 , wherein each of the plurality of process recipes comprises one or more of the energy of the ion beam, an ion dose of the ion beam, and an implantation angle of the ion beam with respect to the workpiece.