Plasma processing apparatus and plasma processing method

1 . A plasma processing apparatus for performing plasma processing on a substrate, comprising:

a chamber;

a substrate support provided inside the chamber and including a region in which the substrate is supported and an edge ring provided around the region, the substrate support being configured to support the substrate inside the edge ring;

a plasma generator provided inside the chamber and configured to generate plasma;

a lifter provided inside the chamber and configured to control a distance between the substrate support and the substrate; and

control circuitry configured to execute a control to cause:

the lifter to position the substrate at a first position spaced apart by a first distance from the substrate support;

the plasma generator to generate the plasma inside the chamber in a state in which the substrate is at the first position; and

the lifter to place the substrate on the substrate support inward of the edge ring from the first position in a state in which the plasma is generated inside the chamber, wherein

the first distance is 1.3 mm or more and 3 mm or less from a central region of the substrate support,

the plasma process apparatus further includes a loading device configured to load the substrate into the chamber,

the control circuitry is configured to further execute a control to cause the loading device to load the substrate, prior to causing the lifter to position the substrate in the first position, to a second position spaced apart by a second distance from the substrate support inside the chamber, and

the first distance is 6.8% or more and 16% or less of the second distance.

2 . The plasma processing apparatus of claim 1 , further comprising:

a gas supplier configured to supply a gas for generating the plasma into the chamber,

wherein the control circuitry is configured to control a flow rate of the gas supplied into the chamber by the gas supplier based on the distance between the substrate support and the substrate.

3 . The plasma processing apparatus of claim 2 , wherein the control circuitry is configured to:

control the gas supplier such that the flow rate of the gas is a first flow rate when the substrate is at the first position, and

control the gas supplier such that the flow rate of the gas is greater than or equal to the first flow rate when the substrate is at a position closer to the substrate support than the first position.

4 . The plasma processing apparatus of claim 1 , further comprising:

an electrode provided at a third distance from the substrate support inside the chamber,

wherein the control circuitry is configured to execute a control to supply radio-frequency power to the substrate support or the electrode so as to generate the plasma, and

wherein the first distance is 3.3% or more and 7.5% or less of the third distance.

5 . The plasma processing apparatus of claim 1 , wherein the substrate support includes an electrostatic attractor configured to electrostatically attract the substrate, and

wherein the control circuitry is configured to further execute a control to cause the electrostatic attractor to electrostatically attract the substrate placed on the substrate support to the substrate support.

6 . The plasma processing apparatus of claim 1 , wherein the control circuitry is configured to execute a control such that an internal pressure of the chamber is 250 mTorr or less.

7 . The plasma processing apparatus of claim 1 , wherein the plasma generator is configured to generate the plasma inside the chamber with the radio-frequency power, and

wherein the control circuitry is configured to further execute a control such that the radio-frequency power is 50 W or more and 1,000 W or less.

8 . A plasma processing apparatus for performing plasma processing on a substrate, comprising:

a chamber;

a substrate support provided inside the chamber, including an edge ring and configured to support the substrate;

a plasma generator provided inside the chamber and configured to generate plasma;

a lifter provided inside the chamber and configured to control a distance between the substrate support and the substrate; and

control circuitry configured to execute a control to cause:

the lifter to position the substrate at a first position spaced apart by a first distance from the substrate support;

the plasma generator to generate the plasma inside the chamber in a state in which the substrate is at the first position; and

the lifter to place the substrate on the substrate support inward of the edge ring from the first position in a state in which the plasma is generated inside the chamber, wherein

the first distance is 1.3 mm or more and 3 mm or less from a central region of the substrate support,

the plasma process apparatus further includes a loading device configured to load the substrate into the chamber,

the control circuitry is configured to further execute a control to cause the loading device to load the substrate, prior to causing the lifter to position the substrate in the first position, to a second position spaced apart by a second distance from the substrate support inside the chamber and

the first distance is 6.8% or more and 16% or less of the second distance.

9 . A plasma processing method of performing plasma processing on a substrate in a plasma processing apparatus,

wherein the plasma processing apparatus includes:

a chamber;

a substrate support provided inside the chamber and including a region in which the substrate is supported and an edge ring provided around the region, the substrate support being configured to support the substrate inside the edge ring;

a plasma generator provided inside the chamber and configured to generate the plasma; and

a lifter provided inside the chamber and configured to control a distance between the substrate support and the substrate,

the plasma processing method comprising:

positioning, by the lifter, the substrate at a first position spaced apart by a first distance from the substrate support, the first distance is 1.3 mm or more and 3 mm or less from a central region of the substrate support;

generating, by the plasma generator, the plasma inside the chamber in a state in which the substrate is positioned at the first position;

placing, by the lifter, the substrate on the substrate support inward of the edge ring from the first position in a state in which the plasma is generated inside the chamber; and

causing a loading device to load the substrate, prior to causing the lifter to position the substrate in the first position, to a second position spaced apart by a second distance from the substrate support inside the chamber,

wherein the first distance is 6.8% or more and 16% or less of the second distance.