Method for producing micro-optics on surface-emitting laser diodes (VCSEL)
A method for producing micro-optics on surface-emitting laser diodes. In a wafer-level operation, the micro-optics are preferably positioned directly on the VCSEL's forming, in each instance, a part of a coherent wafer.
1 . A method for producing micro-optics on Vertical-Cavity Surface-Emitting Laser (VCSEL) diodes, the method comprising:
in a wafer-level operation, positioning the micro-optics directly on the VCSEL's, of a wafer.
2 . The method as recited in claim 1 , wherein the micro- optics are positioned directly on an upper side of the coherent wafer.
3 . The method as recited in claim 1 , further comprising sectioning the coherent wafer to produce individual surface-emitting laser diodes, each formed from a portion of the coherent wafer and having micro-optics positioned directly on an upper side thereof.
4 . A method for producing micro-optics on Vertical-Cavity Surface-Emitting Laser (VCSEL) diodes, the method comprising:
in a wafer-level operation, positioning the micro-optics directly on the VCSEL's of a wafer;
manufacturing a wafer having a plurality of VCSELS;
applying an unfunctionalized photopolymer to the wafer having the VCSELS; and
imprinting specific optical functions of the micro-optics assigned, in each instance, to one of the VCSELS of the wafer.
5 . The method as recited in claim 4 , wherein the photopolymer is bonded or laminated onto the wafer having the VCSELS.
6 . The method as recited in claim 4 , wherein the photopolymer is applied in liquid form to the wafer having the VCSELS, in a spin-on operation or in a screen-printing operation.
7 . The method as recited in claim 4 , wherein prior to, during, or after the positioning of the micro-optics and, after the application of the photopolymer, the VCSELS of the wafer are characterized by a laser pulse, the laser pulse being generated by activating the VCSELS of the wafer.
8 . The method as recited in claim 7 , wherein the laser pulses leaving wafer are measured by a sensor, and measuring results of the sensor specific to each VCSEL are taken into consideration during the imprinting of the optical functions into the corresponding VCSELS.
9 . The method as recited in claim 7 , wherein a duration of the laser pulse, which is used in the characterization of each VCSEL which takes place after the application of the unfunctionalized photopolymer, is selected to be temporally brief in such a manner that exposure of the photopolymer is at least substantially prevented.
10 . The method as recited in claim 4 , wherein during the imprinting, a transmission hologram is produced in the photopolymer.
11 . The method as recited in claim 10 , wherein two different exposure wavefronts are used for producing the transmission hologram.
12 . The method as recited in claim 11 , wherein a first exposure wavefront of the two exposure wavefronts is provided for producing the optical function, and a second exposure wavefront of the two exposure wavefronts is provided to compensate for manufacturing-specific characteristics of the VCSEL, which are ascertained in light of the VCSEL characterization.
13 . The method as recited in claim 12 , wherein using the first exposure wavefront and/or using the second exposure wavefront, a correction of a peak wavelength generated by the VCSEL is imprinted into the transmission hologram using Bragg equations.
14 . The method as recited in claim 11 , wherein the two different exposure wavefronts are coherent with respect to each other and/or are generated by a common source of radiation, the common source of radiation being a common spatial light modulator.
15 . A method for producing micro-optics on Vertical-Cavity Surface-Emitting Laser (VCSEL) diodes, the method comprising:
in a wafer-level operation, positioning the micro-optics directly on the VCSEL's of a wafer
wherein the micro-optics form transmission holograms.