Acoustic wave device
An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an IDT electrode on a first main surface of the piezoelectric layer, wherein the support includes an air gap portion opened on a piezoelectric layer side, the support includes an inner side wall facing the air gap portion, and a high thermal conductive film is directly or indirectly laminated on at least a portion of a second main surface of the piezoelectric layer and extends to the inner side wall of the support.
1 . An acoustic wave device comprising:
a support including a support substrate;
a piezoelectric layer on the support and including first and second main surfaces opposed to each other; and
an IDT electrode on the first main surface of the piezoelectric layer and including a plurality of electrode fingers; wherein
the support includes an air gap portion open on a piezoelectric layer side, and the air gap portion overlaps at least a portion of the IDT electrode in a thickness direction of the support;
the support includes an inner side wall facing the air gap portion; and
a high thermal conductive film is provided that is directly or indirectly laminated on at least a portion of the second main surface of the piezoelectric layer, extends to the inner side wall of the support, and has higher thermal conductivity than the piezoelectric layer.
2 . The acoustic wave device according to claim 1 , wherein the support includes the support substrate and a dielectric layer between the support substrate and the piezoelectric layer.
3 . The acoustic wave device according to claim 2 , wherein thermal conductivity of at least one of the support substrate and the dielectric layer is higher than thermal conductivity of the piezoelectric layer.
4 . The acoustic wave device according to claim 1 , wherein the support includes only the support substrate.
5 . The acoustic wave device according to claim 4 , wherein thermal conductivity of the support substrate is higher than thermal conductivity of the piezoelectric layer.
6 . The acoustic wave device according to claim 1 , further comprising:
an additional film on the second main surface of the piezoelectric layer and located between the second main surface of the piezoelectric layer and the high thermal conductive film; wherein
the additional film is made of a material having lower thermal conductivity than the support.
7 . The acoustic wave device according to claim 1 , wherein the inner side wall includes an uneven portion.
8 . The acoustic wave device according to claim 1 , wherein the support includes a bottom surface facing the piezoelectric layer in the air gap portion.
9 . The acoustic wave device according to claim 8 , wherein the high thermal conductive film extends to the bottom surface located in the air gap portion of the support.
10 . The acoustic wave device according to claim 1 , wherein the air gap portion includes a through-hole that passes through the support.
11 . The acoustic wave device according to claim 1 , wherein the high thermal conductive film is a dielectric film.
12 . The acoustic wave device according to claim 1 , wherein the high thermal conductive film is an atomic layer deposition film.
13 . The acoustic wave device according to claim 12 , wherein the high thermal conductive film is made of one of aluminum oxide, silicon oxide, silicon nitride, or silicon oxynitride.
14 . The acoustic wave device according to claim 1 , wherein the acoustic wave device is operable to generate a plate wave.
15 . The acoustic wave device according to claim 1 , wherein the acoustic wave device is operable to generate a bulk wave in a thickness shear mode.
16 . The acoustic wave device according to claim 15 , wherein d/p is about 0.5 or less, where d is a thickness of the piezoelectric layer and p is a center-to-center distance between adjacent ones of the electrode fingers.
17 . The acoustic wave device according to claim 16 , wherein d/p is about 0.24 or less.
18 . The acoustic wave device according to claim 16 , wherein
a region where adjacent ones of the electrode fingers overlap each other when viewed in a direction in which the adjacent ones of the electrode fingers face each other is an excitation region; and
MR≥about 1.75 (d/p)+0.075 is satisfied, where MR is a metallization ratio of the plurality of electrode fingers with respect to the excitation region.
19 . The acoustic wave device according to claim 1 , wherein the piezoelectric layer is a lithium tantalate layer or a lithium niobate layer.
20 . The acoustic wave device according to claim 1 , wherein
Euler angles (φ, θ, ψ) of the lithium niobate or lithium tantalate are within a range of the following formula (1), (2), or (3):
(0°±10°,0° to 20°,any ψ) formula (1)
(0°±10°,20° to 80°,0° to 60°(1−(θ−50) 2 /900) 1/2 ) or (0°±10°,20° to 80°,[180°−60°(1−(θ−50) 2 /900) 1/2 ]to 180°) formula (2)
(0°±10°,[180°−30°(1−(ψ−90) 2 /8100) 1/2 ]to 180°, any ψ) formula (3).
21 . A method for producing an acoustic wave device, the method comprising:
preparing a structure including a support including a support substrate, a piezoelectric layer on the support and including first and second main surfaces opposed to each other, and an IDT electrode on the first main surface of the piezoelectric layer and including a plurality of electrode fingers, the support including an air gap portion opened on a piezoelectric layer side, the air gap portion overlapping at least a portion of the IDT electrode in a thickness direction of the support, and the support including an inner side wall facing the air gap portion; and
forming, in the air gap portion of the structure, a high thermal conductive film extending from the second main surface of the piezoelectric layer to the inner side wall of the support and being made of a material having higher thermal conductivity than the piezoelectric layer.