IP Library Granted Patent US 12700850
Granted Patent B2
US 12700850 · App. 18/768,315 · Granted Aug 4, 2026

High frequency circuit

Inventor: Takashi Sumiyoshi (Osaka, JP)
Assignee: SUMITOMO ELECTRIC INDUSTRIES, LTD.
H03H11/28H03F1/565H03H7/00
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Quick Facts
Patent No.
US 12700850
App. No.
18/768,315
Granted
Aug 4, 2026
Kind
B2
Abstract

A high frequency circuit includes a transistor having an input electrode that inputs a high frequency signal and an output electrode that outputs the high frequency signal, a transmission line that is connected to any one of the input electrode and the output electrode, and transmits the high frequency signal, a coupling line electrically separated from the transmission line and electromagnetically coupled to the transmission line, and a resonance including an inductor and a capacitor connected in series between a first end of the coupling line and a reference potential. A resonance frequency of the resonance circuit is lower than an operating frequency band of the high frequency circuit.

Claims (21)

1 . A high frequency circuit comprising:

a transistor having an input electrode that inputs a high frequency signal and an output electrode that outputs the high frequency signal;

a transmission line that is connected to any one of the input electrode and the output electrode, and transmits the high frequency signal;

a coupling line electrically separated from the transmission line and electromagnetically coupled to the transmission line; and

a resonance circuit including an inductor and a capacitor connected in series between a first end of the coupling line and a reference potential, and

wherein a resonance frequency of the resonance circuit is lower than an operating frequency band of the high frequency circuit.

2 . The high frequency circuit as claimed in claim 1 , further comprising:

a resistance element;

wherein a first end of the resistance element is connected to a second end of the coupling line, a second end of the resistance element is connected to the reference potential, and a resistance value of the resistance element is ½ times or more and twice or less a characteristic impedance of the coupling line at a center frequency of the operating frequency band of the high frequency circuit.

3 . The high frequency circuit as claimed in claim 1 , further comprising:

an input terminal that inputs the high frequency signal; and

a matching circuit that matches an input impedance of the input terminal with an input impedance of the input electrode;

wherein a first end of the transmission line is connected to the matching circuit, and a second end of the transmission line is connected to the input electrode.

4 . The high frequency circuit as claimed in claim 1 , further comprising:

an output terminal that inputs the high frequency signal; and

a matching circuit that matches an output impedance of the output electrode with an output impedance of the output terminal;

wherein a first end of the transmission line is connected to the output electrode, and a second end of the transmission line is connected to the matching circuit.

5 . The high frequency circuit as claimed in claim 1 , wherein

the input electrode is a gate and the output electrode is a drain.

6 . The high frequency circuit as claimed in claim 1 , wherein

the resonance frequency of the resonance circuit is ½ or less of the operating frequency band of the high frequency circuit or ⅓ or less of the operating frequency band of the high frequency circuit.