Electrical component and method of forming same
Various embodiments of an electrical component and a method of forming such component are disclosed. The electrical component includes a substrate having a first major surface, a second major surface, and an opening disposed in the substrate. The opening extends between the first major surface and the second major surface. Tantalum material is disposed within the opening. Further, the tantalum material includes tantalum particles. The electrical component also includes an anode electrode disposed on the first major surface of the substrate and over the opening and a cathode electrode disposed on the second major surface of the substrate and over the opening.
1 . An electrical component comprising:
a substrate comprising:
a first major surface;
a second major surface;
an opening disposed in the substrate and extending between the first major surface and the second major surface; and
a conductive via that extends between the first major surface and the second major surface of the substrate;
tantalum material disposed within the opening and comprising tantalum particles;
an anode electrode disposed on the first major surface of the substrate and over the opening; and
a cathode electrode disposed on the second major surface of the substrate and over the opening.
2 . The electrical component of claim 1 , wherein the anode electrode comprises:
a tantalum layer disposed on the first major surface of the substrate and over the opening; and
a conductor layer disposed on the tantalum layer.
3 . The electrical component of claim 1 , wherein the tantalum material further comprises:
a dielectric layer disposed on a surface of one or more of the tantalum particles; and
an electrolyte cathode layer disposed on the dielectric layer.
4 . The electrical component of claim 1 , wherein the cathode electrode comprises:
a cathode connection layer disposed on the second major surface of the substrate and over the opening; and
a conductor layer disposed on the cathode connection layer.
5 . The electrical component of claim 1 , wherein the substrate further comprises
a conductor layer disposed on the cathode electrode and electrically connected to the conductive via.
6 . The electrical component of claim 1 , wherein the tantalum particles are sintered together.
7 . The electrical component of claim 1 , wherein the substrate comprises sapphire.
8 . The electrical component of claim 1 , wherein the substrate comprises ceramic material.
9 . The electrical component of claim 1 , wherein the substrate further comprises vertical interconnections.
10 . The electrical component of claim 1 , wherein the electrical component comprises at least 90% tantalum material by volume.
11 . An integrated circuit package comprising the electrical component of claim 1 .
12 . A method comprising:
disposing an opening in a substrate such that the opening extends between a first major surface and a second major surface of the substrate;
disposing tantalum material into the opening of the substrate;
disposing an anode electrode on the first major surface of the substrate and over the opening;
disposing a cathode electrode on the second major surface of the substrate and over the opening; and
disposing a via in the substrate through the cathode electrode such that the via extends between the first major surface and the second major surface of the substrate to the anode electrode.
13 . The method of claim 12 , wherein:
disposing the tantalum material into the opening of the substrate comprises printing the tantalum material into the opening of the substrate, wherein the method further comprises:
drying the tantalum material;
debindering the dried tantalum material; and
sintering the debindered tantalum material.
14 . The method of claim 13 , wherein drying the tantalum material comprises heating the tantalum material to a temperature of at least 80 degrees Celsius.
15 . The method of claim 13 , wherein debindering the tantalum material comprises heating the tantalum material to a temperature of at least 200 degrees Celsius.
16 . The method of claim 13 , wherein sintering the tantalum material comprises heating the tantalum material to at least 1200 degrees Celsius.
17 . The method of claim 12 , wherein disposing the anode electrode comprises:
disposing a tantalum layer on the first major surface of the substrate and over the opening; and
disposing a conductor layer on the tantalum layer.
18 . The method of claim 12 , further comprising planarizing the second major surface of the substrate prior to disposing the cathode electrode on the second major surface.
19 . The method of claim 12 , wherein disposing the cathode electrode comprises:
disposing a cathode connection layer on the second major surface of the substrate; and
disposing a conductor layer on the cathode connection layer.
20 . The method of claim 12 , further comprising:
disposing a dielectric layer on a surface of one or more tantalum particles of the tantalum material; and
disposing an electrolyte cathode layer on the dielectric layer.