IP Library Granted Patent US 12701683
Granted Patent B2
US 12701683 · App. 18/561,923 · Granted Aug 4, 2026

Semiconductor device

Inventors: Nobutake Tsuyuno (Tokyo, JP); Yujiro Kaneko (Hitachinaka, JP); Yusuke Takagi (Hitachinaka, JP)
Assignee: Hitachi Astemo, Ltd.
H05K7/20927H10W40/242H10W40/47H10W40/70
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Quick Facts
Patent No.
US 12701683
App. No.
18/561,923
Granted
Aug 4, 2026
Kind
B2
Abstract

In an electric circuit body, at least one of the cooling members fixed to both surfaces of a first semiconductor module and a second semiconductor module includes a first heat dissipation region that abuts on the first semiconductor module through a heat conduction member, a second heat dissipation region that abuts on the second semiconductor module through the heat conduction member, and a low rigidity portion formed between the first heat dissipation region and the second heat dissipation region to have lower rigidity than the first heat dissipation region and the second heat dissipation region; and the fixing member fixes the cooling member to both surfaces of the first semiconductor module and the second semiconductor module in the low rigidity portion of the cooling member.

Claims (18)

1 . An electric circuit body comprising:

a first semiconductor module and a second semiconductor module in which power semiconductor elements are sealed, respectively;

a cooling member that cools heat transferred from the power semiconductor elements; and

a fixing member that fixes the cooling member to both surfaces of the first semiconductor module and the second semiconductor module arranged side by side,

wherein the cooling member fixed to both surfaces of the first semiconductor module and the second semiconductor module and includes a first heat dissipation region that abuts on the first semiconductor module through a heat conduction member, a second heat dissipation region that abuts on the second semiconductor module through the heat conduction member, and a low rigidity portion formed between the first heat dissipation region and the second heat dissipation region to have lower rigidity than the first heat dissipation region and the second heat dissipation region, and

the fixing member fixes the cooling member to both surfaces of the first semiconductor module and the second semiconductor module in the low rigidity portion of the cooling member.

2 . The electric circuit body according to claim 1 , wherein the fixing member is an adhesive that is disposed between the first heat dissipation region and the second heat dissipation region and adheres the low rigidity portion of the cooling member to the first semiconductor module and the second semiconductor module.

3 . The electric circuit body according to claim 1 , wherein the heat conduction member also serves as the fixing member.

4 . The electric circuit body according to claim 1 , wherein

the low rigidity portion of the cooling member has a first recess formed on the first semiconductor module side and the second semiconductor module side, and

the fixing member is disposed while being fitted in the first recess.

5 . The electric circuit body according to claim 1 , wherein the low rigidity portion of the cooling member has a second recess formed on a side opposite to the first semiconductor module side and the second semiconductor module side.

6 . The electric circuit body according to claim 5 , wherein the fixing member is disposed to abut on the second recess, and fixes the cooling member to both surfaces of the first semiconductor module and the second semiconductor module by tightening the cooling member in a thickness direction of the electric circuit body.

7 . The electric circuit body according to claim 1 , wherein the first heat dissipation region is larger than a region where the power semiconductor element of the first semiconductor module is connected to a conductor plate, and the second heat dissipation region is larger than a region where the power semiconductor element of the second semiconductor module is connected to a conductor plate.

8 . The electric circuit body according to claim 7 , wherein the first semiconductor module and the second semiconductor module adjacent to the first semiconductor module are disposed spaced apart from each other.

9 . The electric circuit body according to claim 7 , wherein the first semiconductor module and the second semiconductor module adjacent to the first semiconductor module are disposed in contact with each other.

10 . The electric circuit body according to claim 8 , wherein a boundary portion between the first semiconductor module and the second semiconductor module adjacent to the first semiconductor module is arranged in a region facing the low rigidity portion.

11 . A power conversion device comprising the electric circuit body described in claim 1 , wherein the power conversion device converts DC power into AC power.