Optical device and method of manufacture
Optical devices and methods of manufacture are presented in which an opening is formed within a first semiconductor device and then bonded to other optical devices. A laser die or other fill material may be used to refill the opening. The first semiconductor device is then electrically connected to an optical interposer.
1 . A method of manufacturing an optical device, the method comprising:
forming a first semiconductor device as a part of a first wafer, the first semiconductor device comprising a layer of active devices and an interconnect structure;
forming a first opening at least partially through the interconnect structure and the layer of active devices of the first semiconductor device;
embedding a laser die within the first opening such that first conductive contacts of the laser die have surfaces that are coplanar with surfaces of second conductive contacts of the first semiconductor device; and
bonding the first semiconductor device to an optical interposer while the first semiconductor device remains the part of the first wafer.
2 . The method of claim 1 , wherein the embedding the laser die comprises bonding the laser die to the first semiconductor device.
3 . The method of claim 1 , wherein the filling the first opening further comprises depositing a seal material around the laser die within the first opening.
4 . The method of claim 3 , wherein the filling the first opening further comprises planarizing the laser die with the interconnect structure.
5 . The method of claim 1 , wherein the filling the first opening comprises depositing an anti-reflective coating along sidewalls of the first opening.
6 . The method of claim 5 , wherein the filling the first opening comprises depositing a fill material, wherein after the depositing the fill material the fill material has a dished surface.
7 . The method of claim 6 , wherein the filling the first opening further comprises:
depositing a dielectric material adjacent to the dished surface; and
planarizing the dielectric material with the interconnect structure.
8 . A method of manufacturing an optical device, the method comprising:
receiving a first semiconductor device;
embedding a laser die within the first semiconductor device, wherein the embedding comprises bonding the laser die to an exposed surface of the first semiconductor device; and
simultaneously bonding the first semiconductor device and the laser die to a first optical interposer.
9 . The method of claim 8 , further comprising bonding the first optical interposer to a local silicon interposer.
10 . The method of claim 8 , further comprising:
forming first optical components on an opposite side of the first optical interposer from the laser die; and
forming through vias through the first optical components.
11 . The method of claim 8 , wherein the embedding the laser die bonds the laser die to the first semiconductor device.
12 . The method of claim 8 , further comprising bonding the first optical interposer to a silicon interposer.
13 . The method of claim 12 , further comprising bonding a second semiconductor device and a third semiconductor device to the silicon interposer.
14 . The method of claim 8 , wherein the embedding the laser die comprises:
placing the laser die within a first opening of the first semiconductor device;
depositing a seal material around the laser die; and
planarizing the laser die and seal material with the first semiconductor device.
15 . The method of claim 14 , further comprising simultaneously forming contact pads electrically connected to an interconnect of the first semiconductor device and the laser die.
16 . A method of manufacturing an optical device, the method comprising:
embedding a laser die into a first semiconductor device by bonding the laser die to an exposed surface of the first semiconductor device;
bonding a first optical interposer to the first semiconductor device while the first semiconductor device is part of a wafer;
separating the first semiconductor device from a remainder of the wafer to form an optical stack;
bonding the optical stack to an interposer; and
bonding a memory device to the interposer.
17 . The method of claim 16 , wherein the memory device is a memory stack.
18 . The method of claim 16 , further comprising bonding a second semiconductor die to the interposer.
19 . The method of claim 16 , wherein the embedding the laser die comprises:
placing the laser die within a first opening of the first semiconductor device;
depositing a seal material around the laser die; and
planarizing the laser die and seal material with the first semiconductor device.
20 . The method of claim 16 , wherein through vias extend through the first optical interposer.