Semiconductor package
A semiconductor package includes a first structure, a first semiconductor chip on the first structure, a first conductive pad on the first structure between the first structure and the first semiconductor chip, a second conductive pad on a lower surface of the first semiconductor chip and vertically overlapping the first conductive pad, a bump connecting the first conductive pad and the second conductive pad, a first adhesive layer surrounding at least a part of side walls of the bump and side walls of the first conductive pad, and a second adhesive layer surrounding at least a part of the side walls of the bump and side walls of the second conductive pad, the second adhesive layer including a material different from the first adhesive layer, wherein a horizontal width of the first adhesive layer is smaller than a horizontal width of the second adhesive layer.
1 . A semiconductor package comprising:
a first structure;
a first semiconductor chip on an upper surface of the first structure;
a first conductive pad on the upper surface of the first structure between the upper surface of the first structure and the first semiconductor chip;
a second conductive pad on a lower surface of the first semiconductor chip and vertically overlapping the first conductive pad;
a bump connecting the first conductive pad and the second conductive pad;
a first adhesive layer in contact with the upper surface of the first structure, the first adhesive layer surrounding at least a part of side walls of the bump and side walls of the first conductive pad; and
a second adhesive layer in contact with an upper surface of the first adhesive layer and the lower surface of the first semiconductor chip, the second adhesive layer surrounding at least a part of the side walls of the bump and side walls of the second conductive pad, the second adhesive layer including a material different from the first adhesive layer,
wherein a width of the first adhesive layer in a horizontal direction is smaller than a width of the second adhesive layer in the horizontal direction.
2 . The semiconductor package of claim 1 , wherein the width of the first adhesive layer in the horizontal direction is smaller than a width of the first semiconductor chip in the horizontal direction.
3 . The semiconductor package of claim 1 , wherein a width of the first semiconductor chip in the horizontal direction is smaller than the width of the second adhesive layer in the horizontal direction.
4 . The semiconductor package of claim 1 , wherein side walls of the second adhesive layer extend in the horizontal direction more than side walls of the first semiconductor chip.
5 . The semiconductor package of claim 1 , wherein side walls of the second adhesive layer extend in the horizontal direction more than side walls of the first adhesive layer.
6 . The semiconductor package of claim 1 , wherein an upper surface of the first conductive pad is at a lower vertical level than the upper surface of the first adhesive layer.
7 . The semiconductor package of claim 1 , wherein at least a part of the bump is in contact with the upper surface of the first adhesive layer.
8 . The semiconductor package of claim 1 , wherein the first structure is a printed circuit board.
9 . The semiconductor package of claim 1 , wherein the second adhesive layer is in contact with side walls of the first adhesive layer.
10 . The semiconductor package of claim 1 , further comprising:
a second semiconductor chip on the upper surface of the first semiconductor chip, the second semiconductor chip electrically connected to the first semiconductor chip;
a third semiconductor chip on an upper surface of the second semiconductor chip, the third semiconductor chip electrically connected to the second semiconductor chip;
a first through via extending in a vertical direction through the first semiconductor chip;
a second through via extending in the vertical direction through the second semiconductor chip; and
a molding layer at least partially surrounding each of the first to third semiconductor chips on the upper surface of the first structure.
11 . The semiconductor package of claim 1 , further comprising:
a second semiconductor chip spaced apart from the first semiconductor chip in the horizontal direction on the upper surface of the first structure, the second semiconductor chip electrically connected to the first semiconductor chip through the first structure; and
a second structure on a lower surface of the first structure, the second structure electrically connected to the first structure.
12 . The semiconductor package of claim 1 , further comprising:
a second structure on a lower surface of the first structure, the second structure electrically connected to the first structure;
a third structure on the upper surface of the first structure;
a post electrically connecting the first structure and the third structure; and
a second semiconductor chip on an upper surface of the third structure, the second semiconductor chip electrically connected to the first semiconductor chip through the third structure, the post, and the first structure.
13 . A semiconductor package comprising:
a structure;
a semiconductor chip on an upper surface of the structure;
a first adhesive layer between the upper surface of the structure and a lower surface of the semiconductor chip, the first adhesive layer in contact with the upper surface of the structure;
a second adhesive layer between an upper surface of the first adhesive layer and the lower surface of the semiconductor chip, the second adhesive layer in contact with each of the upper surface of the first adhesive layer and the lower surface of the semiconductor chip, the second adhesive layer including a material different from the first adhesive layer;
a recess in the first adhesive layer;
a first conductive pad inside the recess, the first conductive pad in contact with the upper surface of the structure, an upper surface of the first conductive pad is at a lower vertical level than the upper surface of the first adhesive layer;
a second conductive pad inside the second adhesive layer, the second conductive pad in contact with the lower surface of the semiconductor chip; and
a bump connecting the first conductive pad and the second conductive pad, at least a part of the bump inside the recess, side walls of the bump being surrounded by each of the first adhesive layer and the second adhesive layer,
wherein a width of the first adhesive layer in a horizontal direction is smaller than a width of the semiconductor chip in the horizontal direction.
14 . The semiconductor package of claim 13 , wherein the width of the first adhesive layer in the horizontal direction is smaller than a width of the second adhesive layer in the horizontal direction.
15 . The semiconductor package of claim 13 , wherein the width of the semiconductor chip in the horizontal direction is smaller than a width of the second adhesive layer in the horizontal direction.
16 . The semiconductor package of claim 13 , wherein at least a part of the bump is in contact with the upper surface of the first adhesive layer.
17 . The semiconductor package of claim 13 , wherein a width of the recess in the horizontal direction decreases from the upper surface of the first adhesive layer toward the upper surface of the structure.
18 . The semiconductor package of claim 13 , wherein at least a part of the second adhesive layer is in contact with the upper surface of the structure and on side walls of the first adhesive layer.
19 . The semiconductor package of claim 13 , further comprising:
a molding layer on side walls of the first adhesive layer, side walls of the second adhesive layer, and side walls and the upper surface of the semiconductor chip on the upper surface of the structure.
20 . A semiconductor package comprising:
a structure;
a semiconductor chip on an upper surface of the structure;
a first conductive pad on the upper surface of the structure between the upper surface of the structure and the semiconductor chip;
a second conductive pad on a lower surface of the semiconductor chip and vertically overlapping the first conductive pad;
a bump connecting the first conductive pad and the second conductive pad;
a first adhesive layer in contact with the upper surface of the structure, the first adhesive layer surrounding at least a portion of side walls of the bump and side walls of the first conductive pad;
a second adhesive layer in contact with an upper surface of the first adhesive layer and the lower surface of the semiconductor chip, the second adhesive layer surrounding at least a portion of the side walls of the bump and side walls of the second conductive pads, the second adhesive layer including a material different from the first adhesive layer; and
a molding layer on the upper surface of the structure and covering side walls of the first adhesive layer, side walls of the second adhesive layer, and side walls and an upper surface of the semiconductor chip,
wherein a horizontal width of the semiconductor chip is smaller than a horizontal width of the second adhesive layer,
wherein a horizontal width of the first adhesive layer is smaller than the horizontal width of the semiconductor chip,
wherein an upper surface of the first conductive pad is at a lower vertical level than the upper surface of the first adhesive layer, and
wherein at least a portion of the bump is in contact with the upper surface of the first adhesive layer.