Tin as nuclear spin qubit in silicon
Coupling qubits is provided. The method comprises embedding a tin atom in a silicon substrate and forming a number of quantum dot electrodes over the silicon substrate. The quantum dot electrodes draw an electron from an electron source into the silicon substrate and performing an electron-nuclear controlled-phase gate operation by: moving the electron adiabatically toward the tin atom to achieve a specified level of hyperfine interaction (HFI) between the electron and the nucleus of the tin atom to minimize the effect of noise; holding the electron at the distance of the specified HIFI for a specified duration of time to represent an “on” state; and moving the electron adiabatically away from the tin atom to lower the HFI below the specified level and represent an “off” state.
1 . A method for coupling qubits, the method comprising:
embedding a tin atom in a silicon substrate;
forming a number of quantum dot electrodes over the silicon substrate;
drawing, with the quantum dot electrodes, an electron from an electron source into the silicon substrate;
performing an electron-nuclear controlled-phase gate operation by:
moving, with the quantum dot electrodes, the electron adiabatically toward the tin atom to achieve a specified level of hyperfine interaction (HFI) between the electron and the nucleus of the tin atom to minimize the effect of noise;
holding, with the quantum dot electrodes, the electron at the distance of the specified HFI for a specified duration of time to represent an “on” state; and
moving, with the quantum dot electrodes, the electron adiabatically away from the tin atom to lower the HFI below the specified level and represent an “off” state.
2 . The method of claim 1 , wherein the specified level of HFI is maximize HFI.
3 . The method of claim 1 , further comprising isotopically enriching the silicon substrate with silicon-28 isotopes to minimize silicon-29 isotopes.
4 . The method of claim 1 , wherein the tin atom comprises a tin-119 or tin-117 isotope.
5 . The method of claim 1 , wherein spin of the electron comprises a first qubit and nuclear spin of the tin atom comprises a second qubit.
6 . The method of claim 1 , wherein the electron is held at least until there is a controlled-π rotation in phase.
7 . The method of claim 1 , further comprising tuning the electron-nuclear controlled-phase gate operation with an external magnetic field with a strength on the order of 10 s of mT to suppress flip-flop errors.
8 . A method for coupling qubits, the method comprising:
drawing, by a number of quantum dot electrodes, an electron from an electron source into a silicon substrate that contains an embedded tin atom;
moving, with the quantum dot electrodes, the electron adiabatically toward the tin atom to achieve a specified level of hyperfine interaction (HFI) between the electron and the nucleus of the tin atom to minimize the effect of noise;
holding, with the quantum dot electrodes, the electron at the distance of the specified HFI for a specified duration of time to represent an “on” state; and
moving, with the quantum dot electrodes, the electron adiabatically away from the tin atom to lower the HFI below the specified level and represent an “off” state.
9 . The method of claim 8 , wherein the specified level of HFI is maximize HFI.
10 . The method of claim 8 , further comprising isotopically enriching the silicon substrate with silicon-28 isotopes to minimize silicon-29 isotopes.
11 . The method of claim 8 , wherein the tin atom comprises a tin-119 or tin-117 isotope.
12 . The method of claim 8 , wherein spin of the electron comprises a first qubit and nuclear spin of the tin atom comprises a second qubit.
13 . The method of claim 8 , wherein the electron is held at least until there is a controlled-π rotation in phase.
14 . The method of claim 8 , further comprising tuning the electron-nuclear controlled-phase gate operation with an external magnetic field with a strength on the order of 10 s of mT to suppress flip-flop errors.
15 . A qubit coupling system, comprising:
a silicon substrate;
a tin atom embedded in the silicon substrate;
a number of quantum dot electrodes over the silicon substrate;
an electron source connected to the silicon substrate, wherein the quantum dot electrodes are configured to perform an electron-nuclear controlled-phase gate operation by adiabatically moving an electron from the electron source toward the tin atom to achieve a specified level hyperfine interaction (HFI) between the electron and the nucleus of the tin atom to minimize the effect of noise, holding the electron at the distance of specified HFI for a specified duration of time, which represents an “on” state, and adiabatically moving the electron away from the tin atom to lower the HFI below the specified level, which represents an “off” state.
16 . The system of claim 15 , further comprising a silicon dioxide layer between the silicon substrate and the quantum dot electrodes.
17 . The system of claim 15 , wherein the silicon substrate is isotopically enriched with silicon-28 isotopes to minimize silicon-29 isotopes.
18 . The system of claim 15 , wherein the tin atom comprises a tin-119 or tin-117 isotope.
19 . The system of claim 15 , wherein spin of the electron comprises a first qubit and nuclear spin of the tin atom comprises a second qubit.
20 . The system of claim 15 , wherein flip-flop errors are suppressed by tuning the electron-nuclear controlled-phase gate operation with an external magnetic field with a strength on the order of 10 s of mT.