Integrated circuits having heterogeneous devices therein and methods of designing the same

1 . An integrated circuit comprising:

a first transistor including a first gate extending in a first direction, a first drain, and a first source that is separated from the first drain in a second direction, which is perpendicular to the first direction;

a second transistor including a second gate extending in one of the first and second directions, a second drain, and a second source that is separated from the second drain in a third direction, which is perpendicular to the first and second directions; and

a first connection structure that electrically connects the first transistor to the second transistor, and includes a pattern extending in the second direction between the first transistor and the second transistor,

wherein the pattern overlaps with one of the first drain and the first source of the first transistor in the third direction and the pattern overlaps with the second gate of the second transistor in the third direction, and

wherein the first transistor corresponds to a lateral transistor and the second transistor corresponds to a vertical transistor.

2 . The integrated circuit of claim 1 , further comprising:

a first contact and a second contact electrically connected to the first transistor and the second transistor, respectively; and

a first via and a second via electrically connected to the first contact and the second contact, respectively; and

wherein the pattern includes a metal pattern connecting the first via to the second via.

3 . The integrated circuit of claim 1 , further comprising:

a first contact and a second contact connected to the first transistor and the second transistor, respectively; and

wherein the pattern includes a via connecting the first contact to the second contact.

4 . The integrated circuit of claim 1 , further comprising:

a first contact connected to the first transistor; and

wherein the pattern includes a second contact connecting the first contact to the second transistor.

5 . The integrated circuit of claim 1 , wherein the pattern extends from the second source in one of the first and second directions.

6 . The integrated circuit of claim 1 , further comprising:

a plurality of cells aligned in a plurality of rows extending in the second direction; and

wherein the first transistor, the second transistor, and the first connection structure are included within a first cell arranged in a first row of the plurality of rows among the plurality of cells.

7 . The integrated circuit of claim 6 ,

wherein the plurality of cells include a second cell arranged in a second row adjacent to the first row; and

wherein the second cell includes:

a third transistor including a third gate extending in the first direction, a third drain, and a third source, which is separated from the third drain in the second direction;

a fourth transistor including a fourth gate extending in one of the first and second directions, a fourth drain, and a fourth source, which is separated from the fourth drain in the third direction; and

a second connection structure that electrically connects the third transistor to the fourth transistor, and includes a pattern extending in the second direction and between the third transistor and the fourth transistor.

8 . The integrated circuit of claim 7 , wherein the first transistor and the third transistor extend adjacent to a boundary between the first row and the second row.

9 . The integrated circuit of claim 7 , wherein the second transistor and the fourth transistor extend adjacent to a boundary between the first row and the second row.

10 . The integrated circuit of claim 7 , wherein a first width of the first row is greater than a second width of the second row; wherein the first transistor is larger than the third transistor;

and wherein the second transistor is larger than the fourth transistor.

11 . The integrated circuit of claim 1 , further comprising:

a plurality of cells aligned in a plurality of rows extending in the second direction;

wherein the plurality of cells include a first cell arranged in a first row of the plurality of rows and a second cell arranged in a second row adjacent to the first row;

wherein the first transistor is included in the first cell and the second transistor is included in the second cell; and

wherein the first connection structure includes a pattern crossing a boundary between the first row and the second row.

12 . The integrated circuit of claim 11 , wherein a first width of the first row is greater than a second width of the second row.

13 . The integrated circuit of claim 1 , further comprising:

a plurality of blocks;

wherein the first transistor is included in a first block among the plurality of blocks, and the second transistor is included in a second block among the plurality of blocks; and

wherein the first connection structure is connected to the first block and the second block.

14 . The integrated circuit of claim 1 , further comprising:

at least one selected from a first power rail and a second power rail, with the first power rail being electrically connected to the first source and extending in one of the first and second directions, and the second power rail being electrically connected to the second source and extending in one of the first and second directions; and

wherein each of the first and second power rails is one of a buried power rail (BPR) and a backside power rail (BSPR).

15 . An integrated circuit, comprising:

a first transistor including a first gate extending in a first direction, a first drain, and a first source that is separated from the first drain in a second direction, which is perpendicular to the first direction;

a second transistor including a second gate extending in one of the first and second directions, a second drain, and a second source that is separated from the second drain in a third direction, which is perpendicular to the first and second directions; and

a first connection structure that electrically connects the first transistor to the second transistor, said first connection structure including a first contact extending in the third direction between the first transistor and the second transistor,

wherein the second source and the second drain overlap with one of the first source and the first drain in the third direction, and

wherein the first transistor corresponds to a lateral transistor and the second transistor corresponds to a vertical transistor.

16 . The integrated circuit of claim 15 , wherein the first connection structure further includes a first pattern that extends in one of the first and second directions, and electrically connects the second gate and the first contact.

17 . The integrated circuit of claim 15 , wherein the first connection structure further includes a first pattern that is electrically connected to one of the second source and the second drain, and extends in one of the first and second directions.

18 . The integrated circuit of claim 15 , wherein the first connection structure electrically connects one of the first source and the first drain to one of the second source and the second drain.

19 . An integrated circuit, comprising:

a first transistor including a first gate extending in a first direction, a first drain, and a first source that is separated from the first drain in a second direction, which is perpendicular to the first direction;

a second transistor including a second gate extending in one of the first and second directions, a second drain, and a second source that is separated from the second drain in a third direction, which is perpendicular to the first and second directions; and

a first connection structure configured to electrically connect the first transistor to the second transistor,

wherein the first transistor corresponds to a lateral transistor and the second transistor corresponds to a vertical transistor, and

wherein the first gate of the first transistor and the second gate of the second transistor are electrically connected.

20 . The integrated circuit of claim 15 , wherein the first contact overlaps with the first transistor in the third direction.